CSD19535KTT
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 D2PAK 封装的单路、3.4mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.4
VGSTH typ (typ) (V): 2.7
QG (typ) (nC): 75
QGD (typ) (nC): 11
QGS (typ) (nC): 25
ID - silicon limited at TC=25°C (A): 197
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.4
VGSTH typ (typ) (V): 2.7
更多
QG (typ) (nC): 75
QGD (typ) (nC): 11
QGS (typ) (nC): 25
ID - silicon limited at TC=25°C (A): 197
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD19536KTT
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 D2PAK 封装的单路、2.4mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.4
VGSTH typ (typ) (V): 2.5
QG (typ) (nC): 118
QGD (typ) (nC): 17
QGS (typ) (nC): 37
ID - silicon limited at TC=25°C (A): 272
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.4
VGSTH typ (typ) (V): 2.5
更多
QG (typ) (nC): 118
QGD (typ) (nC): 17
QGS (typ) (nC): 37
ID - silicon limited at TC=25°C (A): 272
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD22204W
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、9.9mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -8
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 9.9
Rds(on) at VGS=2.5 V (max) (mΩ): 14
VGSTH typ (typ) (V): -0.7
QG (typ) (nC): 18.9
QGD (typ) (nC): 4.2
QGS (typ) (nC): 3.2
ID - silicon limited at TC=25°C (A): 5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -8
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 9.9
Rds(on) at VGS=2.5 V (max) (mΩ): 14
更多
VGSTH typ (typ) (V): -0.7
QG (typ) (nC): 18.9
QGD (typ) (nC): 4.2
QGS (typ) (nC): 3.2
ID - silicon limited at TC=25°C (A): 5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD13302W
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1mm x 1mm WLP 封装的单路、17.1mΩ、12V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 12
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 17.1
VGSTH typ (typ) (V): 1
QG (typ) (nC): 6
QGD (typ) (nC): 2.1
QGS (typ) (nC): 0.7
ID - silicon limited at TC=25°C (A): 1.6
ID - package limited (A): 1.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 12
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 17.1
VGSTH typ (typ) (V): 1
更多
QG (typ) (nC): 6
QGD (typ) (nC): 2.1
QGS (typ) (nC): 0.7
ID - silicon limited at TC=25°C (A): 1.6
ID - package limited (A): 1.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD13306W
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1mm x 1.5mm WLP 封装的单路、10.2mΩ、12V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 12
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 10.2
VGSTH typ (typ) (V): 1
QG (typ) (nC): 8.6
QGD (typ) (nC): 3
QGS (typ) (nC): 1.1
ID - silicon limited at TC=25°C (A): 3.5
ID - package limited (A): 3.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 12
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 10.2
VGSTH typ (typ) (V): 1
更多
QG (typ) (nC): 8.6
QGD (typ) (nC): 3
QGS (typ) (nC): 1.1
ID - silicon limited at TC=25°C (A): 3.5
ID - package limited (A): 3.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17578Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、9.3mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 6.9
Rds(on) at VGS=4.5 V (max) (mΩ): 9.3
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 7.9
QGD (typ) (nC): 2
QGS (typ) (nC): 3.1
ID - silicon limited at TC=25°C (A): 59
ID - package limited (A): 25
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 6.9
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 9.3
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 7.9
QGD (typ) (nC): 2
QGS (typ) (nC): 3.1
ID - silicon limited at TC=25°C (A): 59
ID - package limited (A): 25
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17579Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、13.3mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 9.7
Rds(on) at VGS=4.5 V (max) (mΩ): 13.3
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 5.4
QGD (typ) (nC): 1.2
QGS (typ) (nC): 2.3
ID - silicon limited at TC=25°C (A): 46
ID - package limited (A): 25
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 9.7
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 13.3
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 5.4
QGD (typ) (nC): 1.2
QGS (typ) (nC): 2.3
ID - silicon limited at TC=25°C (A): 46
ID - package limited (A): 25
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19534KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单路、16.5mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 16.5
VGSTH typ (typ) (V): 2.8
QG (typ) (nC): 16.4
QGD (typ) (nC): 3.3
QGS (typ) (nC): 5.1
ID - silicon limited at TC=25°C (A): 54
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 16.5
VGSTH typ (typ) (V): 2.8
更多
QG (typ) (nC): 16.4
QGD (typ) (nC): 3.3
QGS (typ) (nC): 5.1
ID - silicon limited at TC=25°C (A): 54
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD87501L
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 LGA 封装、具有栅极 ESD 保护的双路共漏极、5.5mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Dual Common Drain
Rds(on) at VGS=10 V (max) (mΩ): 3.9
Rds(on) at VGS=4.5 V (max) (mΩ): 5.5
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 15
QGD (typ) (nC): 6
QGS (typ) (nC): 5
ID - silicon limited at TC=25°C (A): 14
ID - package limited (A): 14
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Dual Common Drain
Rds(on) at VGS=10 V (max) (mΩ): 3.9
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 5.5
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 15
QGD (typ) (nC): 6
QGS (typ) (nC): 5
ID - silicon limited at TC=25°C (A): 14
ID - package limited (A): 14
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD85301Q2
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 2mm x 2mm SON 封装、具有栅极 ESD 保护的双路、27mΩ、20V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 20
VGS (V): 10
Type: N-channel
Configuration: Dual
Rds(on) at VGS=4.5 V (max) (mΩ): 27
VGSTH typ (typ) (V): 0.9
QG (typ) (nC): 4.2
QGD (typ) (nC): 1
QGS (typ) (nC): 1.1
ID - silicon limited at TC=25°C (A): 5
ID - package limited (A): 5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 20
VGS (V): 10
Type: N-channel
Configuration: Dual
Rds(on) at VGS=4.5 V (max) (mΩ): 27
VGSTH typ (typ) (V): 0.9
更多
QG (typ) (nC): 4.2
QGD (typ) (nC): 1
QGS (typ) (nC): 1.1
ID - silicon limited at TC=25°C (A): 5
ID - package limited (A): 5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150