CSD85302L
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1.35mm x 1.35mm LGA 封装、具有栅极 ESD 保护的双路共漏极、24mΩ、20V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 20
VGS (V): 10
Type: N-channel
Configuration: Dual Common Drain
Rds(on) at VGS=4.5 V (max) (mΩ): 24
VGSTH typ (typ) (V): 0.9
QG (typ) (nC): 6
QGD (typ) (nC): 1.4
QGS (typ) (nC): 1.2
ID - silicon limited at TC=25°C (A): 7
ID - package limited (A): 7
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 20
VGS (V): 10
Type: N-channel
Configuration: Dual Common Drain
Rds(on) at VGS=4.5 V (max) (mΩ): 24
VGSTH typ (typ) (V): 0.9
更多
QG (typ) (nC): 6
QGD (typ) (nC): 1.4
QGS (typ) (nC): 1.2
ID - silicon limited at TC=25°C (A): 7
ID - package limited (A): 7
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19532KTT
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 D2PAK 封装的单路、5.6mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 5.6
VGSTH typ (typ) (V): 2.6
QG (typ) (nC): 44
QGD (typ) (nC): 5.6
QGS (typ) (nC): 17
ID - silicon limited at TC=25°C (A): 136
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 5.6
VGSTH typ (typ) (V): 2.6
更多
QG (typ) (nC): 44
QGD (typ) (nC): 5.6
QGS (typ) (nC): 17
ID - silicon limited at TC=25°C (A): 136
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD25404Q3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、6.5mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 6.5
Rds(on) at VGS=2.5 V (max) (mΩ): 12.1
VGSTH typ (typ) (V): -0.9
QG (typ) (nC): 10.8
QGD (typ) (nC): 2.2
QGS (typ) (nC): 2.8
ID - silicon limited at TC=25°C (A): -104
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 6.5
Rds(on) at VGS=2.5 V (max) (mΩ): 12.1
更多
VGSTH typ (typ) (V): -0.9
QG (typ) (nC): 10.8
QGD (typ) (nC): 2.2
QGS (typ) (nC): 2.8
ID - silicon limited at TC=25°C (A): -104
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19537Q3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、14.5mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 14.5
VGSTH typ (typ) (V): 3
QG (typ) (nC): 16
QGD (typ) (nC): 2.9
QGS (typ) (nC): 5.5
ID - silicon limited at TC=25°C (A): 53
ID - package limited (A): 50
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 14.5
VGSTH typ (typ) (V): 3
更多
QG (typ) (nC): 16
QGD (typ) (nC): 2.9
QGS (typ) (nC): 5.5
ID - silicon limited at TC=25°C (A): 53
ID - package limited (A): 50
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87334Q3D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的 20A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 20
Power loss (W): 1.6
Ploss current (A): 12
Features: Motor control, Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 20
Power loss (W): 1.6
Ploss current (A): 12
Features: Motor control, Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18542KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单路、4mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4
Rds(on) at VGS=4.5 V (max) (mΩ): 5.1
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 44
QGD (typ) (nC): 6.9
QGS (typ) (nC): 10
ID - silicon limited at TC=25°C (A): 170
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 5.1
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 44
QGD (typ) (nC): 6.9
QGS (typ) (nC): 10
ID - silicon limited at TC=25°C (A): 170
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD17484F4
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1mm x 0.6mm LGA 封装、具有栅极 ESD 保护的单路、128mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 12
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 128
VGSTH typ (typ) (V): 0.85
QG (typ) (nC): 0.92
QGD (typ) (nC): 0.075
QGS (typ) (nC): 0.28
ID - silicon limited at TC=25°C (A): 3
ID - package limited (A): 3
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 12
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 128
VGSTH typ (typ) (V): 0.85
更多
QG (typ) (nC): 0.92
QGD (typ) (nC): 0.075
QGS (typ) (nC): 0.28
ID - silicon limited at TC=25°C (A): 3
ID - package limited (A): 3
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD25484F4
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.6mm x 1mm LGA 封装、具有栅极 ESD 保护的单路、109mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 109
Rds(on) at VGS=2.5 V (max) (mΩ): 180
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 1.09
QGD (typ) (nC): 0.15
QGS (typ) (nC): 0.35
ID - silicon limited at TC=25°C (A): 2.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 109
Rds(on) at VGS=2.5 V (max) (mΩ): 180
更多
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 1.09
QGD (typ) (nC): 0.15
QGS (typ) (nC): 0.35
ID - silicon limited at TC=25°C (A): 2.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18535KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单路、2mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2
Rds(on) at VGS=4.5 V (max) (mΩ): 2.9
VGSTH typ (typ) (V): 1.9
QG (typ) (nC): 63
QGD (typ) (nC): 10.4
QGS (typ) (nC): 15.7
ID - silicon limited at TC=25°C (A): 279
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 2.9
VGSTH typ (typ) (V): 1.9
QG (typ) (nC): 63
QGD (typ) (nC): 10.4
QGS (typ) (nC): 15.7
ID - silicon limited at TC=25°C (A): 279
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD18536KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单路、1.6mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.6
Rds(on) at VGS=4.5 V (max) (mΩ): 2.2
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 83
QGD (typ) (nC): 14
QGS (typ) (nC): 18
ID - silicon limited at TC=25°C (A): 349
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.6
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 2.2
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 83
QGD (typ) (nC): 14
QGS (typ) (nC): 18
ID - silicon limited at TC=25°C (A): 349
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175