CSD17570Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、0.92mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 0.69
Rds(on) at VGS=4.5 V (max) (mΩ): 0.92
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 93
QGD (typ) (nC): 34
QGS (typ) (nC): 27
ID - silicon limited at TC=25°C (A): 407
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 0.69
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 0.92
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 93
QGD (typ) (nC): 34
QGS (typ) (nC): 27
ID - silicon limited at TC=25°C (A): 407
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD88537ND
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 SO-8 封装的双路、15mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Dual
Rds(on) at VGS=10 V (max) (mΩ): 15
VGSTH typ (typ) (V): 3
QG (typ) (nC): 14
QGD (typ) (nC): 2.3
QGS (typ) (nC): 4.6
ID - silicon limited at TC=25°C (A): 16
ID - package limited (A): 15
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Dual
Rds(on) at VGS=10 V (max) (mΩ): 15
VGSTH typ (typ) (V): 3
更多
QG (typ) (nC): 14
QGD (typ) (nC): 2.3
QGS (typ) (nC): 4.6
ID - silicon limited at TC=25°C (A): 16
ID - package limited (A): 15
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD88539ND
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 SO-8 封装的双路、28mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Dual
Rds(on) at VGS=10 V (max) (mΩ): 28
VGSTH typ (typ) (V): 3
QG (typ) (nC): 14
QGD (typ) (nC): 2.3
QGS (typ) (nC): 4.6
ID - silicon limited at TC=25°C (A): 11.7
ID - package limited (A): 15
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Dual
Rds(on) at VGS=10 V (max) (mΩ): 28
VGSTH typ (typ) (V): 3
更多
QG (typ) (nC): 14
QGD (typ) (nC): 2.3
QGS (typ) (nC): 4.6
ID - silicon limited at TC=25°C (A): 11.7
ID - package limited (A): 15
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19501KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单路、6.6mΩ、80V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 6.6
VGSTH typ (typ) (V): 2.6
QG (typ) (nC): 38
QGD (typ) (nC): 5.8
QGS (typ) (nC): 12.4
ID - silicon limited at TC=25°C (A): 129
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 6.6
VGSTH typ (typ) (V): 2.6
更多
QG (typ) (nC): 38
QGD (typ) (nC): 5.8
QGS (typ) (nC): 12.4
ID - silicon limited at TC=25°C (A): 129
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD25310Q2
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 2mm x 2mm SON 封装的单通道、23.9mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -8
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 23.9
Rds(on) at VGS=2.5 V (max) (mΩ): 32.5
VGSTH typ (typ) (V): -0.85
QG (typ) (nC): 3.6
QGD (typ) (nC): 0.5
QGS (typ) (nC): 1.1
ID - silicon limited at TC=25°C (A): 9.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -8
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 23.9
Rds(on) at VGS=2.5 V (max) (mΩ): 32.5
更多
VGSTH typ (typ) (V): -0.85
QG (typ) (nC): 3.6
QGD (typ) (nC): 0.5
QGS (typ) (nC): 1.1
ID - silicon limited at TC=25°C (A): 9.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19505KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单路、3.1mΩ、80V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.1
VGSTH typ (typ) (V): 2.6
QG (typ) (nC): 76
QGD (typ) (nC): 11
QGS (typ) (nC): 25
ID - silicon limited at TC=25°C (A): 208
ID - package limited (A): 150
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.1
VGSTH typ (typ) (V): 2.6
更多
QG (typ) (nC): 76
QGD (typ) (nC): 11
QGS (typ) (nC): 25
ID - silicon limited at TC=25°C (A): 208
ID - package limited (A): 150
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD19535KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单路、3.6mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.6
VGSTH typ (typ) (V): 2.7
QG (typ) (nC): 78
QGD (typ) (nC): 13
QGS (typ) (nC): 25
ID - silicon limited at TC=25°C (A): 187
ID - package limited (A): 150
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.6
VGSTH typ (typ) (V): 2.7
更多
QG (typ) (nC): 78
QGD (typ) (nC): 13
QGS (typ) (nC): 25
ID - silicon limited at TC=25°C (A): 187
ID - package limited (A): 150
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD19536KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单路、2.7mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.7
VGSTH typ (typ) (V): 2.5
QG (typ) (nC): 118
QGD (typ) (nC): 17
QGS (typ) (nC): 37
ID - silicon limited at TC=25°C (A): 259
ID - package limited (A): 150
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.7
VGSTH typ (typ) (V): 2.5
更多
QG (typ) (nC): 118
QGD (typ) (nC): 17
QGS (typ) (nC): 37
ID - silicon limited at TC=25°C (A): 259
ID - package limited (A): 150
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD13201W10
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1mm x 1mm WLP 封装的单通道、34mΩ、12V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 12
VGS (V): 8
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 34
VGSTH typ (typ) (V): 0.8
QG (typ) (nC): 2.3
QGD (typ) (nC): 0.3
QGS (typ) (nC): 0.5
ID - silicon limited at TC=25°C (A): 1.6
ID - package limited (A): 1.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 12
VGS (V): 8
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 34
VGSTH typ (typ) (V): 0.8
更多
QG (typ) (nC): 2.3
QGD (typ) (nC): 0.3
QGS (typ) (nC): 0.5
ID - silicon limited at TC=25°C (A): 1.6
ID - package limited (A): 1.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19506KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单通道、2.3mΩ、80V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
VGSTH typ (typ) (V): 2.5
QG (typ) (nC): 120
QGD (typ) (nC): 20
QGS (typ) (nC): 37
ID - silicon limited at TC=25°C (A): 273
ID - package limited (A): 150
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
VGSTH typ (typ) (V): 2.5
更多
QG (typ) (nC): 120
QGD (typ) (nC): 20
QGS (typ) (nC): 37
ID - silicon limited at TC=25°C (A): 273
ID - package limited (A): 150
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175