CSD19533KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单通道、10.5mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 10.5
VGSTH typ (typ) (V): 2.8
QG (typ) (nC): 27
QGD (typ) (nC): 5.4
QGS (typ) (nC): 9
ID - silicon limited at TC=25°C (A): 86
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 10.5
VGSTH typ (typ) (V): 2.8
更多
QG (typ) (nC): 27
QGD (typ) (nC): 5.4
QGS (typ) (nC): 9
ID - silicon limited at TC=25°C (A): 86
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD19533Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单通道、9.5mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 9.5
VGSTH typ (typ) (V): 2.8
QG (typ) (nC): 27
QGD (typ) (nC): 4.9
QGS (typ) (nC): 7.9
ID - silicon limited at TC=25°C (A): 75
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 9.5
VGSTH typ (typ) (V): 2.8
更多
QG (typ) (nC): 27
QGD (typ) (nC): 4.9
QGS (typ) (nC): 7.9
ID - silicon limited at TC=25°C (A): 75
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD25402Q3A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单通道、8.9mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 8.9
Rds(on) at VGS=2.5 V (max) (mΩ): 15.9
VGSTH typ (typ) (V): -0.9
QG (typ) (nC): 7.5
QGD (typ) (nC): 1.1
QGS (typ) (nC): 2.4
ID - silicon limited at TC=25°C (A): -72
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 8.9
Rds(on) at VGS=2.5 V (max) (mΩ): 15.9
更多
VGSTH typ (typ) (V): -0.9
QG (typ) (nC): 7.5
QGD (typ) (nC): 1.1
QGS (typ) (nC): 2.4
ID - silicon limited at TC=25°C (A): -72
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19503KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单通道、9.2mΩ、80V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 9.2
VGSTH typ (typ) (V): 2.8
QG (typ) (nC): 28
QGD (typ) (nC): 5.4
QGS (typ) (nC): 9.8
ID - silicon limited at TC=25°C (A): 94
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 9.2
VGSTH typ (typ) (V): 2.8
更多
QG (typ) (nC): 28
QGD (typ) (nC): 5.4
QGS (typ) (nC): 9.8
ID - silicon limited at TC=25°C (A): 94
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD19502Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单通道、4.1mΩ、80V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.1
VGSTH typ (typ) (V): 2.7
QG (typ) (nC): 48
QGD (typ) (nC): 8.6
QGS (typ) (nC): 14
ID - silicon limited at TC=25°C (A): 157
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.1
VGSTH typ (typ) (V): 2.7
更多
QG (typ) (nC): 48
QGD (typ) (nC): 8.6
QGS (typ) (nC): 14
ID - silicon limited at TC=25°C (A): 157
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19532Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单通道、4.9mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.9
VGSTH typ (typ) (V): 2.6
QG (typ) (nC): 48
QGD (typ) (nC): 8.7
QGS (typ) (nC): 13
ID - silicon limited at TC=25°C (A): 140
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.9
VGSTH typ (typ) (V): 2.6
更多
QG (typ) (nC): 48
QGD (typ) (nC): 8.7
QGS (typ) (nC): 13
ID - silicon limited at TC=25°C (A): 140
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD85312Q3E
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的双通道共源极、14mΩ、20V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 20
VGS (V): 10
Type: N-channel
Configuration: Dual Common Source
Rds(on) at VGS=4.5 V (max) (mΩ): 14
VGSTH typ (typ) (V): 1.1
QG (typ) (nC): 11.7
QGD (typ) (nC): 1.6
QGS (typ) (nC): 3.5
ID - silicon limited at TC=25°C (A): 39
ID - package limited (A): 39
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 20
VGS (V): 10
Type: N-channel
Configuration: Dual Common Source
Rds(on) at VGS=4.5 V (max) (mΩ): 14
VGSTH typ (typ) (V): 1.1
更多
QG (typ) (nC): 11.7
QGD (typ) (nC): 1.6
QGS (typ) (nC): 3.5
ID - silicon limited at TC=25°C (A): 39
ID - package limited (A): 39
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17571Q2
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 2mm x 2mm SON 封装的单通道、29mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 24
Rds(on) at VGS=4.5 V (max) (mΩ): 29
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 2.4
QGD (typ) (nC): 0.6
QGS (typ) (nC): 0.9
ID - silicon limited at TC=25°C (A): 7.6
ID - package limited (A): 22
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 24
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 29
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 2.4
QGD (typ) (nC): 0.6
QGS (typ) (nC): 0.9
ID - silicon limited at TC=25°C (A): 7.6
ID - package limited (A): 22
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD23381F4
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.6mm x 1mm LGA 封装、具有栅极 ESD 保护的单通道、175mΩ、-12V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -12
VGS (V): -8
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 175
Rds(on) at VGS=2.5 V (max) (mΩ): 300
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 1.14
QGD (typ) (nC): 0.19
QGS (typ) (nC): 0.3
ID - silicon limited at TC=25°C (A): 2.3
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -12
VGS (V): -8
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 175
Rds(on) at VGS=2.5 V (max) (mΩ): 300
更多
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 1.14
QGD (typ) (nC): 0.19
QGS (typ) (nC): 0.3
ID - silicon limited at TC=25°C (A): 2.3
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD25483F4
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.6mm x 1mm LGA 封装、具有栅极 ESD 保护的单通道、245mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 245
Rds(on) at VGS=2.5 V (max) (mΩ): 390
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 0.96
QGD (typ) (nC): 0.16
QGS (typ) (nC): 0.25
ID - silicon limited at TC=25°C (A): 1.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 245
Rds(on) at VGS=2.5 V (max) (mΩ): 390
更多
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 0.96
QGD (typ) (nC): 0.16
QGS (typ) (nC): 0.25
ID - silicon limited at TC=25°C (A): 1.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150