CSD18501Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、3.2mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.2
Rds(on) at VGS=4.5 V (max) (mΩ): 4.3
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 42
QGD (typ) (nC): 5.9
QGS (typ) (nC): 8.1
ID - silicon limited at TC=25°C (A): 161
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.2
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 4.3
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 42
QGD (typ) (nC): 5.9
QGS (typ) (nC): 8.1
ID - silicon limited at TC=25°C (A): 161
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18503Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、4.3mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.3
Rds(on) at VGS=4.5 V (max) (mΩ): 6.2
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 26
QGD (typ) (nC): 4.3
QGS (typ) (nC): 4.5
ID - silicon limited at TC=25°C (A): 120
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.3
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 6.2
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 26
QGD (typ) (nC): 4.3
QGS (typ) (nC): 4.5
ID - silicon limited at TC=25°C (A): 120
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18504Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、6.6mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 6.6
Rds(on) at VGS=4.5 V (max) (mΩ): 9.8
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 16
QGD (typ) (nC): 2.4
QGS (typ) (nC): 3.2
ID - silicon limited at TC=25°C (A): 75
ID - package limited (A): 50
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 6.6
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 9.8
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 16
QGD (typ) (nC): 2.4
QGS (typ) (nC): 3.2
ID - silicon limited at TC=25°C (A): 75
ID - package limited (A): 50
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18531Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、4.6mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.6
Rds(on) at VGS=4.5 V (max) (mΩ): 5.8
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 36
QGD (typ) (nC): 5.9
QGS (typ) (nC): 6.9
ID - silicon limited at TC=25°C (A): 134
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.6
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 5.8
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 36
QGD (typ) (nC): 5.9
QGS (typ) (nC): 6.9
ID - silicon limited at TC=25°C (A): 134
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17553Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、3.1mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.1
Rds(on) at VGS=4.5 V (max) (mΩ): 4
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 17.5
QGD (typ) (nC): 4.7
QGS (typ) (nC): 5.8
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.1
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 4
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 17.5
QGD (typ) (nC): 4.7
QGS (typ) (nC): 5.8
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD16342Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、5.5mΩ、25V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 5.5
VGSTH typ (typ) (V): 0.85
QG (typ) (nC): 6.5
QGD (typ) (nC): 1.2
QGS (typ) (nC): 2.1
ID - silicon limited at TC=25°C (A): 21
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 5.5
VGSTH typ (typ) (V): 0.85
更多
QG (typ) (nC): 6.5
QGD (typ) (nC): 1.2
QGS (typ) (nC): 2.1
ID - silicon limited at TC=25°C (A): 21
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD25211W1015
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、33mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 33
Rds(on) at VGS=2.5 V (max) (mΩ): 44
VGSTH typ (typ) (V): -0.8
QG (typ) (nC): 3.4
QGD (typ) (nC): 0.2
QGS (typ) (nC): 1.1
ID - silicon limited at TC=25°C (A): 3.2
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 33
Rds(on) at VGS=2.5 V (max) (mΩ): 44
更多
VGSTH typ (typ) (V): -0.8
QG (typ) (nC): 3.4
QGD (typ) (nC): 0.2
QGS (typ) (nC): 1.1
ID - silicon limited at TC=25°C (A): 3.2
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD16327Q3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、4.8mΩ、25V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 4.8
VGSTH typ (typ) (V): 1.2
QG (typ) (nC): 6.2
QGD (typ) (nC): 1.1
QGS (typ) (nC): 1.8
ID - silicon limited at TC=25°C (A): 112
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 4.8
VGSTH typ (typ) (V): 1.2
更多
QG (typ) (nC): 6.2
QGD (typ) (nC): 1.1
QGS (typ) (nC): 1.8
ID - silicon limited at TC=25°C (A): 112
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87330Q3D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的 20A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 20
Power loss (W): 2
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 20
Power loss (W): 2
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87331Q3D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的 15A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 15
Power loss (W): 1.3
Ploss current (A): 10
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 15
Power loss (W): 1.3
Ploss current (A): 10
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150