ISK057N04LM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET 40 V in smallest form factor PQFN 2x2 package
I[D ](@25°C) max: 64.0A
I[Dpuls] max: 254.0A
Operating Temperature max: 150.0°C
Polarity: N
Q[G](typ @10V): 9.7nC
Q[G](typ @4.5V): 4.7nC
R[DS (on)](@10V) max: 5.75mΩ
R[DS (on)](@4.5V) max: 8.3mΩ
V[DS] max: 40.0V
V[GS(th)]: 1.8V
Package: PQFN 2 x 2 (DFN2020)
Budgetary Price €/1k: 0.22
I[Dpuls] max: 492.0A
Mounting: SMD
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 11.4nC
R[th]: 2.5K/W
R[thJA] max: 60.0K/W
R[thJC] max: 2.5K/W
V[DS] max: 30.0V
C[iss]: 1500.0pF
C[oss]: 540.0pF
Q[G](typ @10V): 24.0nC
R[DS (on)](@10V) max: 2.0mΩ
R[DS (on)](@4.5V) max: 2.5mΩ
R[DS (on)](@4.5V LL) max: 2.5mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 123.0A
V[GS(th)]: 1.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.4
IRLHM620
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 20V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 3.3x3.3 package
Mounting: SMD
P[tot](@ T[A]=25°C) max: 2.7W
R[thJC] max: 3.4K/W
V[DS] max: 20.0V
Moisture Sensitivity Level: 1
Polarity: N
P[tot] max: 37.0W
Q[gd]: 25.0nC
T[j] max: 150.0°C
V[GS] max: 12.0V
Package: PQFN 3.3 x 3.3
R[DS (on)](@10V) max: 2.2mΩ
R[DS (on)](@4.5V) max: 2.5mΩ
V[GS(th)]: 0.8V
I[D ](@25°C) max: 40.0A
Q[G](typ @4.5V): 52.0nC
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.3
ISK018NE1LM7
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 7 power MOSFET 15 V in PQFN 2x2
I[D ](@25°C) max: 129.0A
Operating Temperature max: 150.0°C
Package: PQFN 2 x 2 (DFN2020)
Polarity: N
Q[G](typ @4.5V): 7.5nC
R[DS (on)](@4.5V) max: 2.15mΩ
V[DS] max: 15.0V
V[GS(th)]: 1.6V
Budgetary Price €/1k: 0.37
Special Features: Switching optimized
ISK036N03LM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 30 V, 3.6 mΩ, smallest form factor in PQFN 2x2 package
I[D ](@25°C) max: 44.0A
I[D ] max: 44.0A
I[Dpuls] max: 174.0A
P[tot] max: 11.0W
Polarity: N
Q[G](typ @4.5V): 7.7nC
Q[G](typ @10V): 16.2nC
R[DS (on)](@10V) max: 3.6mΩ
R[DS (on)](@4.5V) max: 4.6mΩ
R[DS (on)] max: 3.6mΩ
V[DS] max: 30.0V
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Package: PQFN 2 x 2 (DFN2020)
Budgetary Price €/1k: 0.23
I[Dpuls] max: 612.0A
R[th]: 1.8K/W
P[tot] max: 69.0W
V[DS] max: 25.0V
Q[G](typ @10V): 39.0nC
Polarity: N
C[iss]: 2800.0pF
C[oss]: 1000.0pF
Q[G](typ @4.5V): 18.6nC
R[DS (on)](@10V) max: 1.8mΩ
R[DS (on)](@4.5V) max: 2.4mΩ
R[DS (on)](@4.5V LL) max: 2.4mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 153.0A
V[GS(th)]: 1.53V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.45
V[DS] max: 40.0V
P[tot] max: 63.0W
I[Dpuls] max: 456.0A
Q[G](typ @10V): 32.0nC
R[th]: 2.0K/W
R[thJC] max: 2.0K/W
R[thJA] max: 60.0K/W
Pin Count: 8.0Pins
Polarity: N
Mounting: SMD
C[iss]: 2300.0pF
C[oss]: 640.0pF
Q[G](typ @4.5V): 16.0nC
R[DS (on)](@10V) max: 2.8mΩ
R[DS (on)](@4.5V) max: 3.8mΩ
R[DS (on)](@4.5V LL) max: 3.8mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 114.0A
V[GS(th)]: 1.55V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.36
I[Dpuls] max: 160.0A
R[th]: 4.9K/W
P[tot] max: 26.0W
V[DS] max: 25.0V
Q[G](typ @10V): 9.1nC
Polarity: N
C[iss]: 670.0pF
C[oss]: 290.0pF
Q[G](typ @4.5V): 4.4nC
R[DS (on)](@10V) max: 6.0mΩ
R[DS (on)](@4.5V) max: 8.1mΩ
R[DS (on)](@4.5V LL) max: 8.1mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 40.0A
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.18
BSZ009NE2LS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Best-in-class OptiMOS™ 5 25V power MOSFET in high performance PQFN 3.3x3.3mm package for further performance improvement
I[D ](@25°C) max: 223.0A
I[D ](@ T[C]=25°C) max: 223.0A
I[Dpuls] max: 892.0A
P[tot] max: 69.0W
Package: PQFN 3.3 x 3.3 Fused Lead
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 92.0nC
Q[G](typ @4.5V): 52.0nC
R[DS (on)](@10V) max: 0.9mΩ
R[DS (on)](@4.5V) max: 1.2mΩ
Special Features: ORing/Efuse
V[DS] max: 25.0V
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.58
BSZ063N04LS6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance
I[D ](@25°C) max: 40.0A
I[D ](@ T[C]=25°C) max: 40.0A
I[Dpuls] max: 160.0A
Mounting: SMT
P[tot] max: 38.0W
Package: PQFN 3.3 x 3.3 Fused Lead
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 9.5nC
Q[G](typ @4.5V): 4.6nC
R[DS (on)](@10V) max: 6.3mΩ
R[DS (on)](@4.5V) max: 8.8mΩ
V[DS] max: 40.0V
V[GS(th)]: 1.78V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.27