I[Dpuls] max: 704.0A
Mounting: SMD
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 11.0nC
R[th]: 1.8K/W
R[thJA] max: 60.0K/W
R[thJC] max: 1.8K/W
V[DS] max: 25.0V
C[iss]: 1600.0pF
C[oss]: 1400.0pF
Q[G](typ @10V): 23.0nC
R[DS (on)](@10V) max: 1.45mΩ
R[DS (on)](@4.5V) max: 2.1mΩ
R[DS (on)](@4.5V LL) max: 2.1mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 176.0A
V[GS(th)]: 1.75V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.53
I[Dpuls] max: 196.0A
R[th]: 4.9K/W
P[tot] max: 26.0W
V[DS] max: 30.0V
Q[G](typ @10V): 10.0nC
Polarity: N
C[iss]: 670.0pF
C[oss]: 270.0pF
Q[G](typ @4.5V): 5.2nC
R[DS (on)](@10V) max: 6.5mΩ
R[DS (on)](@4.5V) max: 8.6mΩ
R[DS (on)](@4.5V LL) max: 8.6mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 49.0A
V[GS(th)]: 1.62V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.2
BSZ011NE2LS5I
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Significantly reduced RDS(on) with best-in-class OptiMOS™ 5 power MOSFET 25V in small PQFN 3.3x3.3mm package
I[D ](@25°C) max: 202.0A
I[D ](@ T[C]=25°C) max: 202.0A
I[Dpuls] max: 808.0A
P[tot] max: 69.0W
Package: PQFN 3.3 x 3.3 Fused Lead
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 37.0nC
Q[G](typ @4.5V): 17.0nC
R[DS (on)](@10V) max: 1.1mΩ
R[DS (on)](@4.5V) max: 1.5mΩ
Special Features: Schottky ( includes Schottky like and FETky )
V[DS] max: 25.0V
V[GS(th)]: 1.77V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.62
IQE004NE1LM7CGSC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down Center-Gate with dual-side cooling
I[D ](@25°C) max: 379.0A
Operating Temperature max: 150.0°C
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @4.5V): 29.0nC
R[DS (on)](@4.5V) max: 0.57mΩ
V[DS] max: 15.0V
V[GS(th)]: 1.6V
Budgetary Price €/1k: 0.89
Special Features: Switching optimized
IQE013N04LM6SC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance
I[D ](@25°C) max: 205.0A
I[D ] max: 205.0A
I[Dpuls] max: 820.0A
Operating Temperature max: 175.0°C
P[tot] max: 107.0W
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @10V): 41.0nC
Q[G]: 41.0nC
Q[G](typ @4.5V): 20.0nC
R[DS (on)](@10V) max: 1.35mΩ
R[DS (on)](@4.5V) max: 1.9mΩ
V[DS] max: 40.0V
V[GS(th)]: 1.6V
Special Features: Dual-Side Cooling
Budgetary Price €/1k: 0.86
I[Dpuls] max: 160.0A
Mounting: SMD
P[tot] max: 69.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 18.0nC
R[th]: 1.8K/W
R[thJA] max: 60.0K/W
R[thJC] max: 1.8K/W
V[DS] max: 30.0V
C[iss]: 2500.0pF
C[oss]: 850.0pF
Q[G](typ @10V): 39.0nC
R[DS (on)](@10V) max: 1.5mΩ
R[DS (on)](@4.5V) max: 1.9mΩ
R[DS (on)](@4.5V LL) max: 1.9mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 40.0A
V[GS(th)]: 1.78V
更多
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.42
IQE006NE2LM5CGSC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance
I[D ](@25°C) max: 310.0A
I[D ] max: 310.0A
I[Dpuls] max: 1240.0A
Mounting: SMD
Operating Temperature max: 150.0°C
P[tot] max: 89.0W
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @10V): 62.0nC
Q[G]: 62.0nC
R[DS (on)](@10V) max: 0.58mΩ
R[DS (on)] max: 0.58mΩ
R[DS (on)](@4.5V) max: 0.75mΩ
V[DS] max: 25.0V
V[GS(th)]: 1.6V
Q[G](typ @4.5V): 29.0nC
Special Features: Center-Gate Dual-Side Cooling
Budgetary Price €/1k: 0.8
IQE006NE2LM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 25V low-voltage power MOSFET in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on).
C[iss]: 4100.0pF
C[oss]: 1700.0pF
I[D ](@25°C) max: 298.0A
I[Dpuls] max: 1192.0A
P[tot] max: 89.0W
Polarity: N
Q[G](typ @4.5V): 28.5nC
Q[G](typ @10V): 61.7nC
R[DS (on)](@10V) max: 0.65mΩ
R[DS (on)](@4.5V) max: 0.8mΩ
R[th]: 1.4K/W
R[thJA] max: 60.0K/W
R[thJC] max: 1.4K/W
V[DS] max: 25.0V
V[GS(th)] max: 2.0V
V[GS] max: 16.0V
Package: PQFN 3.3x3.3 Source-Down
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.66
I[Dpuls] max: 424.0A
R[th]: 2.6K/W
P[tot] max: 48.0W
V[DS] max: 30.0V
Q[G](typ @10V): 26.0nC
Polarity: N
C[iss]: 1700.0pF
C[oss]: 600.0pF
Q[G](typ @4.5V): 13.0nC
R[DS (on)](@10V) max: 2.6mΩ
R[DS (on)](@4.5V) max: 3.5mΩ
R[DS (on)](@4.5V LL) max: 3.5mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 106.0A
V[GS(th)]: 1.57V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.28
BSZ024N04LS6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance
I[D ](@25°C) max: 130.0A
I[D ](@ T[C]=25°C) max: 130.0A
I[Dpuls] max: 520.0A
Mounting: SMT
P[tot] max: 75.0W
Package: PQFN 3.3 x 3.3 Fused Lead
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 25.0nC
Q[G](typ @4.5V): 12.3nC
R[DS (on)](@10V) max: 2.4mΩ
R[DS (on)](@4.5V) max: 3.4mΩ
V[DS] max: 40.0V
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.41