BSZ011NE2LS5I
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Significantly reduced RDS(on) with best-in-class OptiMOS™ 5 power MOSFET 25V in small PQFN 3.3x3.3mm package
物料参数
| I[D ](@25°C) max: | 202.0A |
| I[D ](@ T[C]=25°C) max: | 202.0A |
| I[Dpuls] max: | 808.0A |
| P[tot] max: | 69.0W |
| Package: | PQFN 3.3 x 3.3 Fused Lead |
| Pin Count: | 8.0Pins |
| Polarity: | N |
| Q[G](typ @10V): | 37.0nC |
| Q[G](typ @4.5V): | 17.0nC |
| R[DS (on)](@10V) max: | 1.1mΩ |
| R[DS (on)](@4.5V) max: | 1.5mΩ |
| Special Features: | Schottky ( includes Schottky like and FETky ) |
| V[DS] max: | 25.0V |
| V[GS(th)]: | 1.77V |
| Operating Temperature max: | 150.0°C |
| Budgetary Price €/1k: | 0.62 |