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IQE006NE2LM5SC

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance

I[D ](@25°C) max: 310.0A I[D ] max: 310.0A I[Dpuls] max: 1240.0A Operating Temperature max: 150.0°C P[tot] max: 89.0W Package: PQFN 3.3x3.3 Source-Down Polarity: N Q[G](typ @10V): 62.0nC Q[G](typ @4.5V): 29.0nC R[DS (on)](@10V) max: 0.58mΩ R[DS (on)](@4.5V) max: 0.75mΩ V[DS] max: 25.0V V[GS(th)]: 1.6V Special Features: Dual-Side Cooling Budgetary Price €/1k: 0.8

IQE008N03LM5

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance

I[D ](@25°C) max: 253.0A Package: PQFN 3.3x3.3 Source-Down Polarity: N Q[G](typ @4.5V): 30.0nC Q[G](typ @10V): 64.0nC R[DS (on)](@10V) max: 0.85mΩ R[DS (on)](@4.5V) max: 1.4mΩ V[DS] max: 30.0V V[GS(th)]: 1.6V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.78

BSZ021N04LS6

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance

I[D ](@25°C) max: 147.0A I[D ](@ T[C]=25°C) max: 147.0A I[Dpuls] max: 588.0A Mounting: SMT P[tot] max: 83.0W Package: PQFN 3.3 x 3.3 Fused Lead Pin Count: 8.0Pins Polarity: N Q[G](typ @10V): 31.0nC Q[G](typ @4.5V): 15.0nC R[DS (on)](@10V) max: 2.1mΩ R[DS (on)](@4.5V) max: 3.0mΩ V[DS] max: 40.0V V[GS(th)]: 1.7V Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.52

IQE004NE1LM7SC

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down with dual-side cooling

I[D ](@25°C) max: 379.0A I[Dpuls] max: 1516.0A Operating Temperature max: 150.0°C Package: PQFN 3.3x3.3 Source-Down Polarity: N Q[G](typ @4.5V): 29.0nC R[DS (on)](@4.5V) max: 0.57mΩ V[DS] max: 15.0V V[GS(th)]: 1.6V Budgetary Price €/1k: 0.89 Special Features: Switching optimized

IQE008N03LM5CG

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance.

IQE013N04LM6

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on)

I[D ](@25°C) max: 205.0A I[Dpuls] max: 820.0A Package: PQFN 3.3x3.3 Source-Down Polarity: N Q[G](typ @10V): 41.0nC Q[G](typ @4.5V): 20.0nC R[DS (on)](@10V) max: 1.35mΩ R[DS (on)](@4.5V) max: 1.9mΩ V[DS] max: 40.0V V[GS(th)]: 1.6V Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.75

BSZ018N04LS6

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance

I[D ](@25°C) max: 158.0A I[D ](@ T[C]=25°C) max: 158.0A I[Dpuls] max: 633.0A P[tot] max: 83.0W Package: PQFN 3.3 x 3.3 Fused Lead Pin Count: 8.0Pins Polarity: N Q[G](typ @10V): 31.0nC Q[G](typ @4.5V): 15.0nC R[DS (on)](@10V) max: 1.8mΩ R[DS (on)](@4.5V) max: 2.7mΩ V[DS] max: 40.0V V[GS(th)]: 1.7V Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.52

IQDH35N03LM5CG

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ power MOSFETs 30 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) .

I[D ](@25°C) max: 700.0A I[Dpuls] max: 2800.0A Operating Temperature max: 150.0°C Package: PQFN 5x6 Source-Down Polarity: N Q[G](typ @4.5V): 91.0nC Q[G](typ @10V): 197.0nC R[DS (on)](@10V) max: 0.35mΩ R[DS (on)](@4.5V) max: 0.4mΩ V[DS] max: 30.0V V[GS(th)]: 1.6V Special Features: Center-Gate Budgetary Price €/1k: 1.5

IQE006NE2LM5CG

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ low-voltage power MOSFET 25V in PQFN 3.3x3.3 Source-Down Center-Gate package with industry leading RDS(on)

C[iss]: 4100.0pF C[oss]: 1700.0pF I[D ](@25°C) max: 298.0A I[Dpuls] max: 1192.0A P[tot] max: 89.0W Polarity: N Q[G](typ @4.5V): 28.5nC Q[G](typ @10V): 61.7nC R[DS (on)](@10V) max: 0.65mΩ R[DS (on)](@4.5V) max: 0.8mΩ R[th]: 1.4K/W R[thJA] max: 60.0K/W R[thJC] max: 1.4K/W V[DS] max: 25.0V V[GS(th)] max: 2.0V V[GS] max: 16.0V Package: PQFN 3.3x3.3 Source-Down Operating Temperature max: 150.0°C Special Features: Center-Gate Budgetary Price €/1k: 0.66

IQE013N04LM6CGSC

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance

I[D ](@25°C) max: 205.0A I[D ] max: 205.0A I[Dpuls] max: 820.0A Operating Temperature max: 175.0°C P[tot] max: 107.0W Package: PQFN 3.3x3.3 Source-Down Polarity: N Q[G](typ @10V): 41.0nC Q[G]: 41.0nC Q[G](typ @4.5V): 20.0nC R[DS (on)](@10V) max: 1.35mΩ R[DS (on)](@4.5V) max: 1.9mΩ V[DS] max: 40.0V V[GS(th)]: 1.6V Special Features: Center-Gate Dual-Side Cooling Budgetary Price €/1k: 0.86