IQDH35N03LM5CG
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 30 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) .
物料参数
| I[D ](@25°C) max: | 700.0A |
| I[Dpuls] max: | 2800.0A |
| Operating Temperature max: | 150.0°C |
| Package: | PQFN 5x6 Source-Down |
| Polarity: | N |
| Q[G](typ @4.5V): | 91.0nC |
| Q[G](typ @10V): | 197.0nC |
| R[DS (on)](@10V) max: | 0.35mΩ |
| R[DS (on)](@4.5V) max: | 0.4mΩ |
| V[DS] max: | 30.0V |
| V[GS(th)]: | 1.6V |
| Special Features: | Center-Gate |
| Budgetary Price €/1k: | 1.5 |