IQE008N03LM5
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance
物料参数
| I[D ](@25°C) max: | 253.0A |
| Package: | PQFN 3.3x3.3 Source-Down |
| Polarity: | N |
| Q[G](typ @4.5V): | 30.0nC |
| Q[G](typ @10V): | 64.0nC |
| R[DS (on)](@10V) max: | 0.85mΩ |
| R[DS (on)](@4.5V) max: | 1.4mΩ |
| V[DS] max: | 30.0V |
| V[GS(th)]: | 1.6V |
| Operating Temperature max: | 150.0°C |
| Budgetary Price €/1k: | 0.78 |