IQE006NE2LM5CGSC
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance
物料参数
| I[D ](@25°C) max: | 310.0A |
| I[D ] max: | 310.0A |
| I[Dpuls] max: | 1240.0A |
| Mounting: | SMD |
| Operating Temperature max: | 150.0°C |
| P[tot] max: | 89.0W |
| Package: | PQFN 3.3x3.3 Source-Down |
| Polarity: | N |
| Q[G](typ @10V): | 62.0nC |
| Q[G]: | 62.0nC |
| R[DS (on)](@10V) max: | 0.58mΩ |
| R[DS (on)] max: | 0.58mΩ |
| R[DS (on)](@4.5V) max: | 0.75mΩ |
| V[DS] max: | 25.0V |
| V[GS(th)]: | 1.6V |
| Q[G](typ @4.5V): | 29.0nC |
| Special Features: | Center-Gate Dual-Side Cooling |
| Budgetary Price €/1k: | 0.8 |