IQE006NE2LM5
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 25V low-voltage power MOSFET in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on).
物料参数
| C[iss]: | 4100.0pF |
| C[oss]: | 1700.0pF |
| I[D ](@25°C) max: | 298.0A |
| I[Dpuls] max: | 1192.0A |
| P[tot] max: | 89.0W |
| Polarity: | N |
| Q[G](typ @4.5V): | 28.5nC |
| Q[G](typ @10V): | 61.7nC |
| R[DS (on)](@10V) max: | 0.65mΩ |
| R[DS (on)](@4.5V) max: | 0.8mΩ |
| R[th]: | 1.4K/W |
| R[thJA] max: | 60.0K/W |
| R[thJC] max: | 1.4K/W |
| V[DS] max: | 25.0V |
| V[GS(th)] max: | 2.0V |
| V[GS] max: | 16.0V |
| Package: | PQFN 3.3x3.3 Source-Down |
| Operating Temperature max: | 150.0°C |
| Budgetary Price €/1k: | 0.66 |