IRF7832
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
P[tot](@ T[A]=25°C) max: 2.5W
V[DS] max: 30.0V
Mounting: SMD
Package: SO-8
Polarity: N
Q[gd]: 12.0nC
R[thJA] max: 50.0K/W
T[j] max: 155.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 4.0mΩ
R[DS (on)](@4.5V) max: 4.8mΩ
V[GS(th)]: 1.86V
I[D ](@25°C) max: 20.0A
Q[G](typ @4.5V): 34.0nC
Operating Temperature max: 155.0°C
Budgetary Price €/1k: 0.37
BSC0906NS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 30V in SuperSO8 package
I[Dpuls] max: 252.0A
R[th]: 4.2K/W
P[tot] max: 30.0W
Q[G](typ @4.5V): 6.7nC
V[DS] max: 30.0V
Polarity: N
C[iss]: 870.0pF
C[oss]: 330.0pF
Q[G](typ @10V): 13.0nC
R[DS (on)](@10V) max: 4.5mΩ
R[DS (on)](@4.5V) max: 6.4mΩ
R[DS (on)](@4.5V LL) max: 6.4mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 63.0A
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.16
I[Dpuls] max: 288.0A
Mounting: SMD
P[tot] max: 30.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 5.2nC
R[th]: 4.2K/W
R[thJA] max: 50.0K/W
R[thJC] max: 4.2K/W
V[DS] max: 30.0V
C[iss]: 710.0pF
C[oss]: 250.0pF
Q[G](typ @10V): 11.1nC
R[DS (on)](@10V) max: 3.7mΩ
R[DS (on)](@4.5V) max: 4.7mΩ
R[DS (on)](@4.5V LL) max: 4.7mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: SuperSO8 5x6
I[D ](@25°C) max: 72.0A
V[GS(th)]: 1.88V
更多
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.26
BSC011N03LS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 30V in SuperSO8 package
I[Dpuls] max: 920.0A
R[th]: 1.3K/W
P[tot] max: 96.0W
V[DS] max: 30.0V
Q[G](typ @10V): 72.0nC
Polarity: N
C[iss]: 4700.0pF
C[oss]: 1500.0pF
Q[G](typ @4.5V): 36.0nC
R[DS (on)](@10V) max: 1.1mΩ
R[DS (on)](@4.5V) max: 1.4mΩ
R[DS (on)](@4.5V LL) max: 1.4mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 230.0A
V[GS(th)]: 1.5V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.48
BSC0902NS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 30V in SuperSO8 package
I[Dpuls] max: 400.0A
R[th]: 2.6K/W
P[tot] max: 48.0W
V[DS] max: 30.0V
Q[G](typ @4.5V): 13.0nC
Polarity: N
C[iss]: 1700.0pF
C[oss]: 600.0pF
Q[G](typ @10V): 26.0nC
R[DS (on)](@10V) max: 2.6mΩ
R[DS (on)](@4.5V) max: 3.5mΩ
R[DS (on)](@4.5V LL) max: 3.5mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 100.0A
V[GS(th)]: 1.56V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.31
ISC012N04NM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET 40 V normal level in a SSO8 package
I[D ] max: 232.0A
I[D ](@25°C) max: 232.0A
I[Dpuls] max: 928.0A
Mounting: SMT
P[tot] max: 125.0W
Package: SuperSO8 5x6
Pin Count: 8.0Pins
Polarity: N
Q[G]: 51.0nC
Q[G](typ @10V): 51.0nC
R[DS (on)] max: 1.2mΩ
R[DS (on)](@10V) max: 1.2mΩ
V[DS] max: 40.0V
V[GS(th)]: 2.3V
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 0.58
I[Dpuls] max: 400.0A
R[th]: 1.3K/W
P[tot] max: 96.0W
V[DS] max: 30.0V
Q[G](typ @10V): 68.0nC
Polarity: N
C[iss]: 4300.0pF
C[oss]: 1600.0pF
Q[G](typ @4.5V): 34.0nC
R[DS (on)](@10V) max: 1.1mΩ
R[DS (on)](@4.5V) max: 1.5mΩ
R[DS (on)](@4.5V LL) max: 1.5mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: SuperSO8 5x6
I[D ](@25°C) max: 100.0A
V[GS(th)]: 1.75V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.51
ISC019N04NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package
I[D ](@25°C) max: 170.0A
I[Dpuls] max: 680.0A
P[tot] max: 100.0W
Polarity: N
Q[G](typ @10V): 42.0nC
R[DS (on)](@10V) max: 1.9mΩ
V[DS] max: 40.0V
V[GS(th)] max: 3.4V
Package: SuperSO8 5x6
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 0.37
BSC0901NS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 30V power MOSFETs for efficient power management
I[Dpuls] max: 596.0A
R[th]: 1.8K/W
P[tot] max: 69.0W
V[DS] max: 30.0V
Q[G](typ @4.5V): 22.0nC
Polarity: N
C[iss]: 2800.0pF
C[oss]: 960.0pF
Q[G](typ @10V): 44.0nC
R[DS (on)](@10V) max: 1.9mΩ
R[DS (on)](@4.5V) max: 2.4mΩ
R[DS (on)](@4.5V LL) max: 2.4mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 149.0A
V[GS(th)]: 1.53V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.31
IRFH7440
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package
Moisture Sensitivity Level: 1
Polarity: N
Q[gd]: 29.0nC
T[j] max: 150.0°C
V[DS] max: 40.0V
Mounting: SMD
P[tot] max: 104.0W
R[thJC] max: 1.2K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 2.4mΩ
V[GS(th)]: 3.05V
Q[G](typ @10V): 92.0nC
I[D ](@25°C) max: 159.0A
Package: SuperSO8 5x6
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.46