IQFH39N04NM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 40 V power MOSFETs in compact, high performance PQFN 8x6 package with ultra-low RDS(on)
I[D ](@25°C) max: 600.0A
Operating Temperature max: 175.0°C
Package: PQFN 8x6
Polarity: N
Q[G](typ @10V): 182.0nC
R[DS (on)](@10V) max: 0.39mΩ
V[DS] max: 40.0V
V[GS(th)]: 2.3V
Budgetary Price €/1k: 2.8
IQDH29NE2LM5CG
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 25 V in PQFN 5x6 mm 2 Source-Down package with industry leading RDS(on) .
I[D ](@25°C) max: 789.0A
I[Dpuls] max: 3156.0A
Operating Temperature max: 150.0°C
Package: PQFN 5x6 Source-Down
Polarity: N
Q[G](typ @4.5V): 88.0nC
Q[G](typ @10V): 191.0nC
R[DS (on)](@10V) max: 0.29mΩ
R[DS (on)](@4.5V) max: 0.35mΩ
V[DS] max: 25.0V
V[GS(th)]: 1.6V
Special Features: Center-Gate
Budgetary Price €/1k: 1.47
ISC058N04NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package
I[D ](@25°C) max: 63.0A
I[Dpuls] max: 252.0A
P[tot] max: 42.0W
Polarity: N
Q[G](typ @10V): 12.0nC
R[DS (on)](@10V) max: 5.8mΩ
V[DS] max: 40.0V
V[GS(th)] max: 3.4V
Package: SuperSO8 5x6
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 0.25
IRFH6200
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 20V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot](@ T[A]=25°C) max: 3.6W
Q[gd]: 53.0nC
R[thJC] max: 0.5K/W
T[j] max: 150.0°C
V[DS] max: 20.0V
P[tot] max: 250.0W
V[GS] max: 12.0V
R[DS (on)](@10V) max: 0.95mΩ
R[DS (on)](@4.5V) max: 0.99mΩ
V[GS(th)]: 0.8V
I[D ](@25°C) max: 49.0A
Q[G](typ @4.5V): 155.0nC
Package: SuperSO8 5x6
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.7
BSC004NE2LS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 low-voltage power MOSFET 25V
I[D ](@25°C) max: 479.0A
I[Dpuls] max: 1914.0A
Mounting: SMD
P[tot] max: 188.0W
Package: SuperSO8 5x6
Polarity: N
Q[G](typ @10V): 238.0nC
Q[G](typ @4.5V): 135.0nC
R[DS (on)](@10V) max: 0.45mΩ
R[DS (on)](@4.5V) max: 0.85mΩ
V[DS] max: 25.0V
V[GS(th)]: 1.5V
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 0.73
ISG0613N04NM6H
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 dual N-channel 40 V MOSFETs in a scalable power block package
I[D ](@25°C) max: 299.0A
Operating Temperature max: 175.0°C
Package: Power Block 6.3x6
Polarity: N
Q[G](typ @10V): 69.0nC
R[DS (on)](@10V) max: 0.88mΩ
V[DS] max: 40.0V
V[GS(th)]: 2.3V
Special Features: Symmetrical Half-bridge
Budgetary Price €/1k: 1.59
IRF7862
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Package: SO-8
Polarity: N
P[tot](@ T[A]=25°C) max: 2.5W
Q[gd]: 9.8nC
T[j] max: 150.0°C
V[GS] max: 20.0V
Mounting: SMD
R[thJA] max: 50.0K/W
V[DS] max: 30.0V
R[DS (on)](@10V) max: 3.3mΩ
R[DS (on)](@4.5V) max: 4.5mΩ
V[GS(th)]: 1.85V
I[D ](@25°C) max: 21.0A
Q[G](typ @4.5V): 30.0nC
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.37
ISG0613N04NM6HSC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 dual N-channel 40 V MOSFETs in scalable power block with dual-side cooling capability
I[D ](@25°C) max: 299.0A
Operating Temperature max: 175.0°C
Package: Power Block 6.3x6
Polarity: N
Q[G](typ @10V): 69.0nC
R[DS (on)](@10V) max: 0.88mΩ
V[DS] max: 40.0V
V[GS(th)]: 2.3V
Special Features: Symmetrical Half-bridge
Budgetary Price €/1k: 1.72
ISC015N04NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package
I[D ](@25°C) max: 206.0A
I[Dpuls] max: 824.0A
P[tot] max: 115.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 51.0nC
R[DS (on)](@10V) max: 1.5mΩ
V[DS] max: 40.0V
V[GS(th)] max: 3.4V
Package: SuperSO8 5x6
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 0.48
I[Dpuls] max: 588.0A
Mounting: SMD
P[tot] max: 50.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 10.5nC
R[th]: 2.5K/W
R[thJA] max: 50.0K/W
R[thJC] max: 2.5K/W
V[DS] max: 25.0V
C[iss]: 1500.0pF
C[oss]: 750.0pF
Q[G](typ @10V): 22.0nC
R[DS (on)](@10V) max: 1.5mΩ
R[DS (on)](@4.5V) max: 2.2mΩ
R[DS (on)](@4.5V LL) max: 2.2mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: SuperSO8 5x6
I[D ](@25°C) max: 147.0A
V[GS(th)]: 1.81V
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Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.47