ISC017N04NM5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package

I[D ](@25°C) max: 193.0A I[Dpuls] max: 772.0A P[tot] max: 115.0W Polarity: N Q[G](typ @10V): 51.0nC R[DS (on)](@10V) max: 1.7mΩ V[DS] max: 40.0V V[GS(th)] max: 3.4V Package: SuperSO8 5x6 Operating Temperature max: 175.0°C Special Features: Fused leads Budgetary Price €/1k: 0.46
I[Dpuls] max: 400.0A R[th]: 2.6K/W P[tot] max: 48.0W V[DS] max: 30.0V Q[G](typ @4.5V): 12.2nC Polarity: N C[iss]: 1500.0pF C[oss]: 630.0pF Q[G](typ @10V): 24.0nC R[DS (on)](@10V) max: 2.8mΩ R[DS (on)](@4.5V) max: 3.7mΩ R[DS (on)](@4.5V LL) max: 3.7mΩ Special Features: Monolithically Integrated Schottky-like Diode Package: SuperSO8 5x6 I[D ](@25°C) max: 100.0A V[GS(th)]: 1.82V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.28

ISC028N04NM5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package

I[D ](@25°C) max: 121.0A I[Dpuls] max: 484.0A P[tot] max: 75.0W Polarity: N Q[G](typ @10V): 29.0nC R[DS (on)](@10V) max: 2.8mΩ V[DS] max: 40.0V V[GS(th)] max: 3.4V Package: SuperSO8 5x6 Operating Temperature max: 175.0°C Special Features: Fused leads Budgetary Price €/1k: 0.36

BSC005N03LS5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 low-voltage power MOSFET 30V

I[D ](@25°C) max: 433.0A I[Dpuls] max: 1731.0A Mounting: SMD P[tot] max: 188.0W Package: SuperSO8 5x6 Polarity: N Q[G](typ @10V): 122.0nC Q[G](typ @4.5V): 59.0nC R[DS (on)](@10V) max: 0.55mΩ R[DS (on)](@4.5V) max: 0.95mΩ V[DS] max: 30.0V V[GS(th)]: 1.5V Operating Temperature max: 175.0°C Special Features: Fused leads Budgetary Price €/1k: 0.77
I[Dpuls] max: 336.0A R[th]: 3.4K/W P[tot] max: 37.0W V[DS] max: 25.0V Q[G](typ @10V): 16.0nC Polarity: N C[iss]: 1200.0pF C[oss]: 470.0pF Q[G](typ @4.5V): 7.7nC R[DS (on)](@10V) max: 3.2mΩ R[DS (on)](@4.5V) max: 4.8mΩ R[DS (on)](@4.5V LL) max: 4.8mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 84.0A V[GS(th)]: 1.58V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.24
I[Dpuls] max: 232.0A R[th]: 4.5K/W P[tot] max: 28.0W V[DS] max: 25.0V Q[G](typ @4.5V): 5.0nC Polarity: N C[iss]: 760.0pF C[oss]: 320.0pF Q[G](typ @10V): 10.4nC R[DS (on)](@10V) max: 5.0mΩ R[DS (on)](@4.5V) max: 7.1mΩ R[DS (on)](@4.5V LL) max: 7.1mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 58.0A V[GS(th)]: 1.61V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.21

ISC046N04NM5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package

I[D ](@25°C) max: 77.0A I[Dpuls] max: 308.0A P[tot] max: 50.0W Polarity: N Q[G](typ @10V): 16.0nC R[DS (on)](@10V) max: 4.6mΩ V[DS] max: 40.0V V[GS(th)] max: 3.4V Package: SuperSO8 5x6 Operating Temperature max: 175.0°C Special Features: Fused leads Budgetary Price €/1k: 0.27
I[Dpuls] max: 1100.0A R[th]: 0.9K/W P[tot] max: 139.0W V[DS] max: 40.0V Polarity: N C[iss]: 6200.0pF C[oss]: 1900.0pF R[DS (on)](@10V) max: 1.05mΩ R[DS (on)](@4.5V) max: 1.4mΩ R[DS (on)](@4.5V LL) max: 1.4mΩ Special Features: Monolithically Integrated Schottky-like Diode Package: SuperSO8 5x6 I[D ](@25°C) max: 275.0A Q[G](typ @4.5V): 45.0nC V[GS(th)]: 1.75V Operating Temperature max: 150.0°C Special Features: Fused leads Budgetary Price €/1k: 0.92

BSC010N04LS6


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance

I[D ](@25°C) max: 285.0A I[D ](@ T[C]=25°C) max: 285.0A I[Dpuls] max: 1140.0A Mounting: SMT P[tot] max: 150.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @10V): 67.0nC Q[G](typ @4.5V): 32.0nC R[DS (on)](@10V) max: 1.0mΩ R[DS (on)](@4.5V) max: 1.4mΩ V[DS] max: 40.0V Package: SuperSO8 5x6 V[GS(th)]: 1.64V Operating Temperature max: 175.0°C Special Features: Fused leads Budgetary Price €/1k: 0.69
I[Dpuls] max: 328.0A Mounting: SMD P[tot] max: 29.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @10V): 12.0nC R[th]: 4.3K/W R[thJA] max: 50.0K/W R[thJC] max: 4.3K/W V[DS] max: 25.0V C[iss]: 780.0pF C[oss]: 390.0pF Q[G](typ @4.5V): 5.6nC R[DS (on)](@10V) max: 2.6mΩ R[DS (on)](@4.5V) max: 4.0mΩ R[DS (on)](@4.5V LL) max: 4.0mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 82.0A V[GS(th)]: 1.6V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.32