BSC007N04LS6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance
I[D ](@25°C) max: 381.0A
I[D ](@ T[C]=25°C) max: 381.0A
I[Dpuls] max: 1524.0A
Mounting: SMT
P[tot] max: 188.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 94.0nC
Q[G](typ @4.5V): 45.0nC
R[DS (on)](@10V) max: 0.7mΩ
R[DS (on)](@4.5V) max: 1.0mΩ
V[DS] max: 40.0V
Package: SuperSO8 5x6
V[GS(th)]: 1.62V
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 1.03
V[DS] max: 40.0V
P[tot] max: 78.0W
I[Dpuls] max: 644.0A
R[th]: 1.6K/W
R[thJC] max: 1.6K/W
R[thJA] max: 50.0K/W
Pin Count: 8.0Pins
Polarity: N
Mounting: SMD
C[iss]: 2900.0pF
C[oss]: 840.0pF
R[DS (on)](@10V) max: 1.9mΩ
R[DS (on)](@4.5V) max: 2.7mΩ
R[DS (on)](@4.5V LL) max: 2.7mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 161.0A
Q[G](typ @4.5V): 21.0nC
V[GS(th)]: 1.54V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.42
I[Dpuls] max: 780.0A
R[th]: 1.3K/W
P[tot] max: 96.0W
V[DS] max: 40.0V
Polarity: N
C[iss]: 4000.0pF
C[oss]: 1200.0pF
R[DS (on)](@10V) max: 1.45mΩ
R[DS (on)](@4.5V) max: 2.0mΩ
R[DS (on)](@4.5V LL) max: 2.0mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: SuperSO8 5x6
I[D ](@25°C) max: 195.0A
Q[G](typ @4.5V): 29.0nC
V[GS(th)]: 1.68V
Operating Temperature max: 150.0°C
Special Features: Fused leads
Budgetary Price €/1k: 0.59
BSC022N04LS6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance
I[D ](@25°C) max: 139.0A
I[D ](@ T[C]=25°C) max: 139.0A
I[Dpuls] max: 556.0A
Mounting: SMT
P[tot] max: 79.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 28.0nC
Q[G](typ @4.5V): 13.5nC
R[DS (on)](@10V) max: 2.2mΩ
R[DS (on)](@4.5V) max: 3.2mΩ
V[DS] max: 40.0V
Package: SuperSO8 5x6
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 0.46
BSC007N04LS6SC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFETs 40 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance
I[D ](@25°C) max: 381.0A
I[Dpuls] max: 1524.0A
Operating Temperature max: 175.0°C
P[tot] max: 188.0W
Polarity: N
Q[G](typ @10V): 94.0nC
Q[G](typ @4.5V): 45.0nC
R[DS (on)](@10V) max: 0.7mΩ
R[DS (on)](@4.5V) max: 1.0mΩ
V[DS] max: 40.0V
V[GS(th)] max: 2.3V
Package: SuperSO8 5x6 DSC
Special Features: Dual-Side Cooling
Budgetary Price €/1k: 1.08
BSC009N04LSSC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance
I[D ](@25°C) max: 301.0A
I[Dpuls] max: 1204.0A
Operating Temperature max: 175.0°C
P[tot] max: 167.0W
Polarity: N
Q[G](typ @10V): 95.0nC
Q[G](typ @4.5V): 49.0nC
R[DS (on)](@10V) max: 0.94mΩ
R[DS (on)](@4.5V) max: 1.24mΩ
V[DS] max: 40.0V
V[GS(th)] max: 2.0V
Package: SuperSO8 5x6 DSC
Special Features: Dual-Side Cooling
Budgetary Price €/1k: 0.87
IPP015N04NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 40 V in TO-220 package
I[D ](@25°C) max: 193.0A
I[Dpuls] max: 772.0A
Operating Temperature max: 175.0°C
P[tot] max: 188.0W
Package: TO-220
Polarity: N
Q[G](typ @10V): 106.0nC
R[DS (on)](@10V) max: 1.5mΩ
V[DS] max: 40.0V
V[GS(th)]: 2.8V
Budgetary Price €/1k: 0.71
IPP011N04NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 40 V in TO-220 package
I[D ](@25°C) max: 201.0A
I[Dpuls] max: 804.0A
Operating Temperature max: 175.0°C
P[tot] max: 375.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 210.0nC
R[DS (on)](@10V) max: 1.15mΩ
V[DS] max: 40.0V
V[GS(th)]: 2.8V
Budgetary Price €/1k: 1.25
IPP013N04NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 40 V in TO-220 package
I[D ](@25°C) max: 197.0A
I[Dpuls] max: 788.0A
Operating Temperature max: 175.0°C
P[tot] max: 250.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 159.0nC
R[DS (on)](@10V) max: 1.3mΩ
V[DS] max: 40.0V
V[GS(th)]: 2.8V
Budgetary Price €/1k: 0.98
IRFB7440
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
P[tot] max: 208.0W
T[j] max: 175.0°C
Package: TO-220
Polarity: N
Q[gd]: 32.0nC
R[thJC] max: 0.72K/W
V[DS] max: 40.0V
V[GS] max: 20.0V
Mounting: THT
R[DS (on)](@10V) max: 2.5mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 90.0nC
I[D ](@25°C) max: 120.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.48