Mounting: SMD
I[D ](@ T[C]=100°C) max: 347.0A
Polarity: N
Q[gd]: 83.0nC
R[DS (on)](@10V) max: 0.72mΩ
R[DS (on)](@4.5V) max: 1.1mΩ
R[thJC] max: 20.0K/W
T[j] max: 175.0°C
V[DS] max: 40.0V
V[GS] max: 20.0V
Package: TOLL (HSOF-8)
V[GS(th)]: 1.6V
I[D ](@25°C) max: 300.0A
Q[G](typ @4.5V): 179.0nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.87
V[DS] max: 30.0V
I[Dpuls] max: 1200.0A
Q[G](typ @4.5V): 122.0nC
R[th]: 0.5K/W
R[thJC] max: 0.5K/W
R[thJA] max: 40.0K/W
P[tot] max: 300.0W
Polarity: N
C[iss]: 18000.0pF
C[oss]: 5400.0pF
Q[G](typ @10V): 252.0nC
R[DS (on)](@10V) max: 0.4mΩ
R[DS (on)](@4.5V) max: 0.5mΩ
R[DS (on)](@4.5V LL) max: 0.5mΩ
Special Features: Wide SOA
Package: TOLL (HSOF-8)
I[D ](@25°C) max: 300.0A
V[GS(th)]: 1.49V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 1.69
IRL1404ZS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel HEXFET Power MOSFET in a D2Pak package
Moisture Sensitivity Level: 1
Polarity: N
V[GS] max: 16.0V
Mounting: SMD
Package: D2PAK (TO-263)
P[tot] max: 230.0W
Q[gd]: 40.0nC
R[thJC] max: 0.65K/W
T[j] max: 175.0°C
V[DS] max: 40.0V
R[DS (on)](@10V) max: 3.1mΩ
R[DS (on)](@4.5V) max: 5.9mΩ
V[GS(th)]: 2.05V
I[D ](@25°C) max: 200.0A
Q[G](typ @4.5V): 75.0nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.72
IRFS7430
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package
Moisture Sensitivity Level: 1
Mounting: SMD
Package: D2PAK (TO-263)
P[tot] max: 375.0W
R[thJC] max: 0.4K/W
V[DS] max: 40.0V
V[GS] max: 20.0V
Polarity: N
Q[gd]: 98.0nC
T[j] max: 175.0°C
R[DS (on)](@10V) max: 1.2mΩ
V[GS(th)]: 3.05V
Q[G](typ @10V): 300.0nC
I[D ](@25°C) max: 195.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.17
IRFS7434
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package
Moisture Sensitivity Level: 1
Polarity: N
RthJC: NoneK/W
VDS: NoneV
Mounting: SMD
Package: D2PAK (TO-263)
Ptot: NoneW
Qgd: 77.0nC
Tj: None°C
VGS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 216.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 1.03
IRLS3034
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Moisture Sensitivity Level: 1
Package: D2PAK (TO-263)
Polarity: N
Qgd: 54.0nC
Tj: None°C
VGS: NoneV
Mounting: SMD
Ptot: NoneW
RthJC: NoneK/W
VDS: NoneV
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VGS(th): 1.75V
ID (@25°C): NoneA
QG(typ @4.5V): 108.0nC
Operating Temperature: None°C
Budgetary Price €/1k: 1.26
IRF1404S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Moisture Sensitivity Level: 1
Polarity: N
Q[gd]: 42.0nC
V[DS] max: 40.0V
T[j] max: 175.0°C
Mounting: SMD
Package: D2PAK (TO-263)
P[tot] max: 200.0W
R[thJC] max: 0.75K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 4.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 160.0nC
Special Features: Wide SOA
I[D ](@25°C) max: 162.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.71
IRFS7440
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a D2-Pak package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot] max: 208.0W
R[thJC] max: 0.72K/W
V[DS] max: 40.0V
V[GS] max: 20.0V
Package: D2PAK (TO-263)
Q[gd]: 32.0nC
T[j] max: 175.0°C
R[DS (on)](@10V) max: 2.5mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 90.0nC
I[D ](@25°C) max: 120.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.56
IRFS7434-7P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package
Moisture Sensitivity Level: 1
Package: D2PAK 7pin (TO-263 7pin)
Polarity: N
Q[gd]: 66.0nC
T[j] max: 150.0°C
V[DS] max: 40.0V
Mounting: SMD
P[tot] max: 245.0W
R[thJC] max: 0.51K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 1.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 210.0nC
I[D ](@25°C) max: 240.0A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 1.07
ISC007N04NM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET 40 V normal level with latest Infineon technology in a SuperSO8 package
I[D ] max: 381.0A
I[D ](@25°C) max: 381.0A
I[Dpuls] max: 1524.0A
Mounting: SMD
P[tot] max: 188.0W
Package: SuperSO8 5x6
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 94.0nC
R[DS (on)](@10V) max: 0.7mΩ
R[DS (on)] max: 0.7mΩ
V[DS] max: 40.0V
V[GS(th)]: 2.3V
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 0.89