IRFS7430-7P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel HEXFET Power MOSFET in a 7-pin D2Pak package
Moisture Sensitivity Level: 1
Polarity: N
Q[gd]: 96.0nC
T[j] max: 175.0°C
Mounting: SMD
Package: D2PAK 7pin (TO-263 7pin)
P[tot] max: 375.0W
R[thJC] max: 0.4K/W
V[DS] max: 40.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 0.75mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 305.0nC
I[D ](@25°C) max: 240.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.44
IRFS7437-7P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel Power MOSFET in a 7-Pin D2-Pak package
Moisture Sensitivity Level: 1
Polarity: N
R[thJC] max: 0.65K/W
V[DS] max: 40.0V
Mounting: SMD
Package: D2PAK 7pin (TO-263 7pin)
P[tot] max: 231.0W
Q[gd]: 51.0nC
T[j] max: 175.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 1.4mΩ
V[GS(th)]: 3.05V
Q[G](typ @10V): 150.0nC
I[D ](@25°C) max: 195.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.9
I[Dpuls] max: 868.0A
Mounting: SMD
P[tot] max: 74.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 36.0nC
R[th]: 1.7K/W
R[thJA] max: 50.0K/W
R[thJC] max: 1.7K/W
V[DS] max: 25.0V
C[iss]: 2400.0pF
C[oss]: 1400.0pF
Q[G](typ @4.5V): 17.0nC
R[DS (on)](@10V) max: 0.95mΩ
R[DS (on)](@4.5V) max: 1.35mΩ
R[DS (on)](@4.5V LL) max: 1.35mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: SuperSO8 5x6
I[D ](@25°C) max: 217.0A
V[GS(th)]: 1.6V
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Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.7
IRFS3004-7P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package
Moisture Sensitivity Level: 1
Package: D2PAK 7pin (TO-263 7pin)
Ptot: NoneW
Qgd: 65.0nC
Tj: None°C
Mounting: SMD
Polarity: N
RthJC: NoneK/W
VDS: NoneV
VGS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 160.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 1.65
IRFR4104
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Moisture Sensitivity Level: 1
Package: DPAK (TO-252)
Polarity: N
Q[gd]: 24.0nC
R[thJC] max: 1.05K/W
T[j] max: 175.0°C
V[GS] max: 20.0V
V[DS] max: 40.0V
Mounting: SMD
P[tot] max: 140.0W
R[DS (on)](@10V) max: 5.5mΩ
R[DS (on)](@10V) max: 5.5mΩ
V[GS(th)]: 3.0V
V[GS(th)]: 3.0V
Q[G](typ @10V): 59.0nC
Q[G](typ @10V): 59.0nC
I[D ](@25°C) max: 119.0A
I[D ](@25°C) max: 119.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.45
I[Dpuls] max: 350.0A
V[GS(th)] max: 2.2V
R[th]: 2.7K/W
P[tot] max: 56.0W
V[DS] max: 30.0V
Q[G](typ @4.5V): 10.8nC
Package: DPAK (TO-252)
Polarity: N
Q[G](typ @10V): 22.0nC
R[DS (on)](@10V) max: 6.0mΩ
R[DS (on)](@4.5V) max: 9.0mΩ
R[DS (on)](@4.5V LL) max: 9.0mΩ
I[D ](@25°C) max: 50.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.23
IST006N04NM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET 40V sTOLL - 7x8mm2 power MOS package
I[D ](@25°C) max: 475.0A
I[Dpuls] max: 1900.0A
P[tot] max: 250.0W
Polarity: N
Q[G](typ @10V): 127.0nC
R[DS (on)](@10V) max: 0.6mΩ
V[DS] max: 40.0V
V[GS(th)]: 2.5V
Package: sTOLL (HSOF-5)
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.38
BSC059N04LS6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance
I[D ](@25°C) max: 59.0A
I[D ](@ T[C]=25°C) max: 59.0A
I[Dpuls] max: 236.0A
Mounting: SMT
P[tot] max: 38.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 9.4nC
Q[G](typ @4.5V): 4.6nC
R[DS (on)](@10V) max: 5.9mΩ
R[DS (on)](@4.5V) max: 8.4mΩ
V[DS] max: 40.0V
Package: SuperSO8 5x6
V[GS(th)]: 1.78V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.27
I[Dpuls] max: 1260.0A
R[thJC] max: 0.6K/W
R[th]: 0.6K/W
P[tot] max: 250.0W
V[DS] max: 40.0V
Q[G](typ @10V): 260.0nC
Package: D2PAK 7pin (TO-263 7pin)
Polarity: N
C[iss]: 22000.0pF
C[oss]: 4100.0pF
Q[G](typ @4.5V): 125.0nC
R[DS (on)](@10V) max: 1.1mΩ
R[DS (on)](@4.5V) max: 1.4mΩ
R[DS (on)](@4.5V LL) max: 1.4mΩ
Special Features: Wide SOA
I[D ](@25°C) max: 180.0A
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.05
IRLR3114Z
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Moisture Sensitivity Level: 1
Package: DPAK (TO-252)
Polarity: N
T[j] max: 175.0°C
V[GS] max: 16.0V
Mounting: SMD
P[tot] max: 140.0W
R[thJC] max: 1.05K/W
Q[gd]: 18.0nC
V[DS] max: 40.0V
R[DS (on)](@10V) max: 4.5mΩ
R[DS (on)](@4.5V) max: 6.5mΩ
V[GS(th)]: 1.75V
I[D ](@25°C) max: 130.0A
Q[G](typ @4.5V): 40.0nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.42