I[Dpuls] max: 350.0A V[GS(th)] max: 2.2V R[th]: 2.2K/W P[tot] max: 68.0W V[DS] max: 30.0V Q[G](typ @4.5V): 15.0nC Package: DPAK (TO-252) Polarity: N Q[G](typ @10V): 31.0nC R[DS (on)](@10V) max: 5.0mΩ R[DS (on)](@4.5V) max: 7.3mΩ R[DS (on)](@4.5V LL) max: 7.3mΩ I[D ](@25°C) max: 50.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.32
RthJC: NoneK/W VGS(th): NoneV IDpuls: NoneA Rth: 1.6K/W Ptot: NoneW VDS: NoneV QG(typ @10V): 59.0nC Polarity: N Package: DPAK (TO-252) Ciss: 4700.0pF Coss: 1000.0pF QG(typ @4.5V): 28.0nC RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ RDS (on)(@4.5V LL): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.41
I[Dpuls] max: 210.0A V[GS(th)] max: 2.2V R[th]: 4.9K/W P[tot] max: 31.0W V[DS] max: 30.0V Q[G](typ @4.5V): 4.8nC Package: DPAK (TO-252) Polarity: N C[iss]: 770.0pF C[oss]: 350.0pF Q[G](typ @10V): 10.0nC R[DS (on)](@10V) max: 13.5mΩ R[DS (on)](@4.5V) max: 20.5mΩ R[DS (on)](@4.5V LL) max: 20.5mΩ I[D ](@25°C) max: 30.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.2

IRL40SC228


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 40 V Logic Level StrongIRFET™ power MOSFET in D2PAK 7pin

I[Dpuls] max: 1440.0A Mounting: SMD P[tot] max: 416.0W Package: D2PAK 7pin (TO-263 7pin) Pin Count: 7.0Pins Polarity: N R[thJA] max: 62.0K/W R[thJC] max: 0.36K/W V[DS] max: 40.0V Q[gd]: 104.0nC R[th]: 0.36K/W R[DS (on)](@10V) max: 0.65mΩ R[DS (on)](@4.5V) max: 0.9mΩ V[GS(th)]: 1.7V Q[G](typ @4.5V): 205.0nC I[D ](@25°C) max: 360.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 1.72

IRF40R207


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a DPAK package

Moisture Sensitivity Level: 1 Polarity: N RthJC: NoneK/W VGS: NoneV Mounting: SMD Package: DPAK (TO-252) Ptot: NoneW Qgd: 15.0nC Tj: None°C VDS: NoneV RDS (on)(@10V): NonemΩ VGS(th): 3.0V QG(typ @10V): 45.0nC ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.25

IRF7739L1


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ L8 package

Moisture Sensitivity Level: 1 Polarity: N P[tot] max: 125.0W R[thJA] max: 40.0K/W V[DS] max: 40.0V V[GS] max: 20.0V Mounting: SMD P[tot](@ T[A]=25°C) max: 3.8W Q[gd]: 81.0nC T[j] max: 175.0°C R[DS (on)](@10V) max: 1.0mΩ V[GS(th)]: 2.8V Q[G](typ @10V): 220.0nC Micro-stencil: IRF66L8-25 I[D ](@25°C) max: 270.0A Package: DirectFET (L) Operating Temperature max: 175.0°C Budgetary Price €/1k: 1.45

IRFR7446


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: StrongIRFET™ power MOSFET 40 V in a DPAK package

T[j] max: 175.0°C Moisture Sensitivity Level: 1 Mounting: SMD Polarity: N P[tot] max: 98.0W R[thJC] max: 1.52K/W V[DS] max: 40.0V Package: DPAK (TO-252) Q[gd]: 22.0nC V[GS] max: 20.0V R[DS (on)](@10V) max: 3.9mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 65.0nC I[D ](@25°C) max: 120.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.31
I[Dpuls] max: 400.0A V[GS(th)] max: 2.2V R[th]: 1.9K/W P[tot] max: 79.0W V[DS] max: 30.0V Q[G](typ @4.5V): 18.0nC Package: DPAK (TO-252) Polarity: N Q[G](typ @10V): 38.0nC R[DS (on)](@10V) max: 4.0mΩ R[DS (on)](@4.5V) max: 5.9mΩ R[DS (on)](@4.5V LL) max: 5.9mΩ I[D ](@25°C) max: 90.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.27
I[Dpuls] max: 350.0A V[GS(th)] max: 2.2V R[th]: 3.2K/W P[tot] max: 47.0W V[DS] max: 30.0V Q[G](typ @4.5V): 8.7nC Package: DPAK (TO-252) Polarity: N C[iss]: 1400.0pF C[oss]: 580.0pF Q[G](typ @10V): 18.0nC R[DS (on)](@10V) max: 7.5mΩ R[DS (on)](@4.5V) max: 11.4mΩ R[DS (on)](@4.5V LL) max: 11.4mΩ I[D ](@25°C) max: 50.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.22

IRL7472L1


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ L8 package

P[tot] max: 341.0W T[j] max: 175.0°C Moisture Sensitivity Level: 1 Mounting: DirectFET Polarity: N P[tot](@ T[A]=25°C) max: 3.8W Q[gd]: 87.0nC R[thJC] max: 0.44K/W V[DS] max: 40.0V V[GS] max: 20.0V R[DS (on)](@10V) max: 0.45mΩ R[DS (on)](@4.5V) max: 0.7mΩ V[GS(th)]: 1.7V Micro-stencil: IRF66L8-25 I[D ](@25°C) max: 645.0A Q[G](typ @4.5V): 220.0nC Package: DirectFET (L) Operating Temperature max: 175.0°C Budgetary Price €/1k: 1.46