IRLR7843
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Moisture Sensitivity Level: 1
Mounting: SMD
Package: DPAK (TO-252)
P[tot] max: 140.0W
R[thJC] max: 1.05K/W
T[j] max: 175.0°C
V[DS] max: 30.0V
V[GS] max: 20.0V
Polarity: N
Q[gd]: 12.0nC
R[DS (on)](@10V) max: 3.3mΩ
R[DS (on)](@10V) max: 3.3mΩ
R[DS (on)](@4.5V) max: 4.0mΩ
R[DS (on)](@4.5V) max: 4.0mΩ
V[GS(th)]: 1.85V
V[GS(th)]: 1.85V
I[D ](@25°C) max: 161.0A
I[D ](@25°C) max: 161.0A
Q[G](typ @4.5V): 34.0nC
Q[G](typ @4.5V): 34.0nC
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Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.41
I[Dpuls] max: 328.0A
Mounting: SMD
P[tot] max: 36.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 7.1nC
R[th]: 3.5K/W
R[thJA] max: 60.0K/W
R[thJC] max: 3.5K/W
V[DS] max: 30.0V
C[iss]: 960.0pF
C[oss]: 330.0pF
Q[G](typ @10V): 15.0nC
R[DS (on)](@10V) max: 3.4mΩ
R[DS (on)](@4.5V) max: 4.2mΩ
R[DS (on)](@4.5V LL) max: 4.2mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 82.0A
V[GS(th)]: 1.85V
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Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.3
IRF7946
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MX package
R[thJC] max: 1.3K/W
T[j] max: 150.0°C
V[DS] max: 40.0V
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Polarity: N
Q[gd]: 44.0nC
Mounting: SMD
P[tot] max: 96.0W
R[DS (on)](@10V) max: 1.4mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 141.0nC
Micro-stencil: IRF66MX-25
I[D ](@25°C) max: 198.0A
Package: DirectFET (M)
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.76
I[Dpuls] max: 188.0A
R[thJC] max: 3.6K/W
R[th]: 3.6K/W
P[tot] max: 35.0W
V[DS] max: 40.0V
Q[G](typ @4.5V): 8.6nC
Polarity: N
C[iss]: 1400.0pF
C[oss]: 340.0pF
Q[G](typ @10V): 18.0nC
R[DS (on)](@10V) max: 9.7mΩ
R[DS (on)](@4.5V) max: 14.2mΩ
R[DS (on)](@4.5V LL) max: 14.2mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 47.0A
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.22
I[Dpuls] max: 160.0A
R[thJC] max: 2.5K/W
R[th]: 2.5K/W
P[tot] max: 50.0W
V[DS] max: 30.0V
Q[G](typ @4.5V): 13.0nC
Polarity: N
C[iss]: 2100.0pF
C[oss]: 790.0pF
Q[G](typ @10V): 26.0nC
R[DS (on)](@10V) max: 5.0mΩ
R[DS (on)](@4.5V) max: 7.8mΩ
R[DS (on)](@4.5V LL) max: 7.8mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 40.0A
V[GS(th)]: 1.69V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.2
IRF7842
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Polarity: N
Q[gd]: 10.0nC
T[j] max: 150.0°C
Mounting: SMD
Package: SO-8
P[tot](@ T[A]=25°C) max: 2.5W
R[thJA] max: 50.0K/W
V[DS] max: 40.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 5.0mΩ
R[DS (on)](@4.5V) max: 5.9mΩ
V[GS(th)]: 1.8V
I[D ](@25°C) max: 18.0A
Q[G](typ @4.5V): 33.0nC
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.48
IRF8714
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Package: SO-8
Polarity: N
Q[gd]: 3.0nC
T[j] max: 150.0°C
V[GS] max: 20.0V
Mounting: SMD
P[tot](@ T[A]=25°C) max: 2.5W
R[thJA] max: 50.0K/W
V[DS] max: 30.0V
R[DS (on)](@10V) max: 8.7mΩ
R[DS (on)](@4.5V) max: 13.0mΩ
V[GS(th)]: 1.8V
I[D ](@25°C) max: 14.0A
Q[G](typ @4.5V): 8.1nC
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.17
IRL7486M
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel Logic Level StrongIRFET™ Power MOSFET in a DirectFET™ ME package
Mounting: SMD
P[tot] max: 104.0W
R[thJC] max: 1.2K/W
V[DS] max: 40.0V
Moisture Sensitivity Level: 1
Polarity: N
Q[gd]: 33.0nC
T[j] max: 150.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 1.25mΩ
R[DS (on)](@4.5V) max: 2.0mΩ
V[GS(th)]: 1.8V
Micro-stencil: IRF66ME-25
I[D ](@25°C) max: 209.0A
Q[G](typ @4.5V): 76.0nC
Package: DirectFET (M)
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.72
ISC036N04NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package
I[D ](@25°C) max: 98.0A
I[Dpuls] max: 392.0A
P[tot] max: 63.0W
Polarity: N
Q[G](typ @10V): 21.0nC
R[DS (on)](@10V) max: 3.6mΩ
V[DS] max: 40.0V
V[GS(th)] max: 3.4V
Package: SuperSO8 5x6
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 0.28
I[Dpuls] max: 196.0A
R[thJC] max: 3.6K/W
R[th]: 3.6K/W
P[tot] max: 35.0W
V[DS] max: 40.0V
Q[G](typ @10V): 18.0nC
Polarity: N
C[iss]: 1400.0pF
C[oss]: 340.0pF
Q[G](typ @4.5V): 8.6nC
R[DS (on)](@10V) max: 9.3mΩ
R[DS (on)](@4.5V) max: 13.7mΩ
R[DS (on)](@4.5V LL) max: 13.7mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 49.0A
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.19