I[Dpuls] max: 176.0A R[th]: 4.6K/W P[tot] max: 27.0W V[DS] max: 30.0V Q[G](typ @4.5V): 7.2nC Polarity: N C[iss]: 1100.0pF C[oss]: 390.0pF Q[G](typ @10V): 15.0nC R[DS (on)](@10V) max: 9.2mΩ R[DS (on)](@4.5V) max: 11.8mΩ R[DS (on)](@4.5V LL) max: 11.8mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 44.0A V[GS(th)]: 1.57V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.16
I[Dpuls] max: 320.0A R[thJC] max: 2.5K/W R[th]: 2.5K/W P[tot] max: 48.0W V[DS] max: 30.0V Q[G](typ @10V): 34.0nC Polarity: N C[iss]: 2700.0pF C[oss]: 800.0pF Q[G](typ @4.5V): 17.0nC R[DS (on)](@10V) max: 4.5mΩ R[DS (on)](@4.5V) max: 5.7mΩ R[DS (on)](@4.5V LL) max: 5.7mΩ Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 80.0A V[GS(th)]: 1.52V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.2
I[Dpuls] max: 744.0A Mounting: SMD P[tot] max: 69.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @4.5V): 18.0nC R[th]: 1.8K/W R[thJA] max: 50.0K/W R[thJC] max: 1.8K/W V[DS] max: 30.0V C[iss]: 2500.0pF C[oss]: 850.0pF Q[G](typ @10V): 39.0nC R[DS (on)](@10V) max: 1.3mΩ R[DS (on)](@4.5V) max: 1.7mΩ R[DS (on)](@4.5V LL) max: 1.7mΩ Special Features: Monolithically Integrated Schottky-like Diode Package: SuperSO8 5x6 I[D ](@25°C) max: 186.0A V[GS(th)]: 1.78V
Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.51
I[Dpuls] max: 1020.0A R[th]: 1.3K/W P[tot] max: 96.0W V[DS] max: 25.0V Q[G](typ @4.5V): 72.0nC Polarity: N C[iss]: 5800.0pF C[oss]: 1900.0pF Q[G](typ @10V): 126.0nC R[DS (on)](@10V) max: 0.9mΩ R[DS (on)](@4.5V) max: 1.2mΩ R[DS (on)](@4.5V LL) max: 1.2mΩ Special Features: Wide SOA Package: SuperSO8 5x6 I[D ](@25°C) max: 255.0A V[GS(th)]: 1.5V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.56

IRFH7084


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package

Mounting: SMD Q[gd]: 41.0nC R[thJC] max: 0.8K/W T[j] max: 150.0°C V[DS] max: 40.0V Moisture Sensitivity Level: 1 Polarity: N V[GS] max: 20.0V R[DS (on)](@10V) max: 1.25mΩ V[GS(th)]: 3.05V Q[G](typ @10V): 127.0nC I[D ](@25°C) max: 265.0A Package: SuperSO8 5x6 Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.74
I[Dpuls] max: 400.0A Mounting: SMD P[tot] max: 43.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @4.5V): 9.0nC R[th]: 2.9K/W R[thJA] max: 50.0K/W R[thJC] max: 2.9K/W V[DS] max: 30.0V C[iss]: 1200.0pF C[oss]: 420.0pF Q[G](typ @10V): 19.0nC R[DS (on)](@10V) max: 2.3mΩ R[DS (on)](@4.5V) max: 2.8mΩ R[DS (on)](@4.5V LL) max: 2.8mΩ Special Features: Monolithically Integrated Schottky-like Diode Package: SuperSO8 5x6 I[D ](@25°C) max: 100.0A V[GS(th)]: 1.84V
Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.34

IRF8734


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Moisture Sensitivity Level: 1 Mounting: SMD Polarity: N P[tot](@ T[A]=25°C) max: 2.5W Q[gd]: 6.9nC T[j] max: 150.0°C V[DS] max: 30.0V Package: SO-8 R[thJA] max: 50.0K/W V[GS] max: 20.0V R[DS (on)](@10V) max: 3.5mΩ R[DS (on)](@4.5V) max: 5.1mΩ V[GS(th)]: 1.8V I[D ](@25°C) max: 21.0A Q[G](typ @4.5V): 20.0nC Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.31
I[Dpuls] max: 140.0A R[thJC] max: 5.0K/W R[th]: 5.0K/W P[tot] max: 25.0W V[DS] max: 30.0V Q[G](typ @4.5V): 5.0nC Polarity: N C[iss]: 730.0pF C[oss]: 340.0pF Q[G](typ @10V): 9.5nC R[DS (on)](@10V) max: 13.0mΩ R[DS (on)](@4.5V) max: 17.0mΩ R[DS (on)](@4.5V LL) max: 17.0mΩ Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 35.0A V[GS(th)]: 1.75V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.18
Mounting: SMD R[thJA] max: 50.0K/W V[DS] max: 40.0V Moisture Sensitivity Level: 1 Package: SO-8 Polarity: N P[tot](@ T[A]=25°C) max: 2.5W Q[gd]: 5.0nC T[j] max: 150.0°C V[GS] max: 20.0V R[DS (on)](@10V) max: 17.0mΩ R[DS (on)](@4.5V) max: 21.0mΩ V[GS(th)]: 2.0V I[D ](@25°C) max: 9.0A Q[G](typ @4.5V): 15.0nC Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.25
I[Dpuls] max: 228.0A R[th]: 4.5K/W P[tot] max: 28.0W V[DS] max: 30.0V Q[G](typ @4.5V): 5.9nC Polarity: N C[iss]: 770.0pF C[oss]: 300.0pF Q[G](typ @10V): 12.0nC R[DS (on)](@10V) max: 5.2mΩ R[DS (on)](@4.5V) max: 7.2mΩ R[DS (on)](@4.5V LL) max: 7.2mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 57.0A V[GS(th)]: 1.61V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.23