BSC033N08NS5SC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance
I[D ](@25°C) max: 144.0A
I[Dpuls] max: 576.0A
Operating Temperature max: 175.0°C
P[tot] max: 136.0W
Polarity: N
Q[G](typ @10V): 53.0nC
R[DS (on)](@10V) max: 3.3mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Package: SuperSO8 5x6 DSC
Special Features: Dual-Side Cooling
Budgetary Price €/1k: 1.15
BSC014N06NSSC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 60 V power MOSFETs in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance
I[D ](@25°C) max: 261.0A
I[Dpuls] max: 1044.0A
P[tot] max: 188.0W
Polarity: N
Q[G](typ @10V): 89.0nC
R[DS (on)](@10V) max: 1.4mΩ
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Package: SuperSO8 5x6 DSC
Operating Temperature max: 175.0°C
Battery voltage: 24-66 V
Special Features: Dual-Side Cooling
Budgetary Price €/1k: 1.26
ISC009N06LM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Performance improvements with best-in-class OptiMOS™ power MOSFET 60 V in high performance Super SO8 package
I[D ](@25°C) max: 348.0A
Package: SuperSO8 5x6
Polarity: N
Q[G](typ @4.5V): 77.0nC
Q[G](typ @10V): 157.0nC
R[DS (on)](@10V) max: 0.9mΩ
R[DS (on)](@4.5V) max: 1.1mΩ
V[DS] max: 60.0V
V[GS(th)] max: 2.3V
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 1.65
BSC016N06NSSC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 60 V power MOSFETs in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance
C[iss]: 5200.0pF
C[oss]: 1200.0pF
I[D ](@25°C) max: 234.0A
I[Dpuls] max: 936.0A
Mounting: SMD
P[tot] max: 167.0W
Polarity: N
Q[G](typ @10V): 71.0nC
R[DS (on)](@10V) max: 1.6mΩ
R[th]: 0.5K/W
R[thJA] max: 50.0K/W
R[thJC] max: 0.9K/W
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Package: SuperSO8 5x6 DSC
Operating Temperature max: 175.0°C
Special Features: Dual-Side Cooling
Budgetary Price €/1k: 1.12
I[Dpuls] max: 320.0A
R[th]: 1.4K/W
P[tot] max: 107.0W
V[DS] max: 60.0V
Q[G](typ @10V): 38.0nC
Package: TO-220
Polarity: N
C[iss]: 2700.0pF
C[oss]: 670.0pF
R[DS (on)](@10V) max: 4.0mΩ
I[D ](@25°C) max: 80.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.64
ISC010N06NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 Single N-Channel Power MOSFET 60 V, 1.05 mΩ, 330 A in a SSO8 package
I[D ](@25°C) max: 330.0A
I[D ] max: 330.0A
I[Dpuls] max: 1320.0A
Mounting: SMT
P[tot] max: 214.0W
Package: SuperSO8 5x6
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 115.0nC
Q[G]: 115.0nC
R[DS (on)](@10V) max: 1.05mΩ
R[DS (on)] max: 1.05mΩ
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Battery voltage: 24-36 V
Special Features: Fused leads
Budgetary Price €/1k: 1.59
V[DS] max: 60.0V
P[tot] max: 74.0W
I[Dpuls] max: 448.0A
Q[G](typ @10V): 33.0nC
R[th]: 1.7K/W
R[thJC] max: 1.7K/W
R[thJA] max: 50.0K/W
Pin Count: 8.0Pins
Polarity: N
Mounting: SMD
C[iss]: 2400.0pF
C[oss]: 560.0pF
R[DS (on)](@10V) max: 3.4mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 112.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.52
IRLB3036
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Mounting: THT
R[thJC] max: 0.4K/W
V[GS] max: 16.0V
Package: TO-220
Polarity: N
P[tot] max: 380.0W
Q[gd]: 51.0nC
T[j] max: 175.0°C
V[DS] max: 60.0V
R[DS (on)](@10V) max: 2.4mΩ
R[DS (on)](@4.5V) max: 2.8mΩ
V[GS(th)]: 1.75V
I[D ](@25°C) max: 270.0A
Q[G](typ @4.5V): 91.0nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.22
Budgetary Price €/1k: 1.22
BSC019N06NS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET with enhanced temperature rating for improved robustness
I[D ](@25°C) max: 192.0A
I[Dpuls] max: 768.0A
Mounting: SMD
P[tot] max: 136.0W
Pin Count: 8.0Pins
Polarity: N
Q[gd]: 11.0nC
R[th]: 0.7K/W
R[thJC] max: 1.1K/W
R[thJA] max: 50.0K/W
V[DS] max: 60.0V
R[DS (on)](@10V) max: 1.95mΩ
Package: SuperSO8 5x6
Q[G](typ @10V): 58.0nC
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 0.78
IPP016N08NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 80 V in TO-220 package
I[D ] max: 196.0A
I[D ](@25°C) max: 196.0A
I[Dpuls] max: 784.0A
Mounting: THT
P[tot] max: 300.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G]: 170.0nC
Q[G](typ @10V): 170.0nC
R[DS (on)] max: 1.6mΩ
R[DS (on)](@10V) max: 1.6mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Battery voltage: 36-48 V
Budgetary Price €/1k: 1.5