IPP030N06NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 60 V in TO-220 package
I[D ](@25°C) max: 119.0A
I[D ] max: 119.0A
I[Dpuls] max: 476.0A
Mounting: THT
P[tot] max: 150.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G]: 68.0nC
Q[G](typ @10V): 68.0nC
R[DS (on)](@10V) max: 3.05mΩ
R[DS (on)] max: 3.05mΩ
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Battery voltage: 24-66 V
Budgetary Price €/1k: 0.49
I[Dpuls] max: 400.0A
R[th]: 1.1K/W
P[tot] max: 136.0W
V[DS] max: 60.0V
Q[G](typ @10V): 56.0nC
Package: TO-220
Polarity: N
C[iss]: 4100.0pF
C[oss]: 980.0pF
R[DS (on)](@10V) max: 2.9mΩ
I[D ](@25°C) max: 100.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.79
BSC023N08NS5SC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance
I[D ](@25°C) max: 202.0A
I[Dpuls] max: 808.0A
Operating Temperature max: 175.0°C
P[tot] max: 188.0W
Polarity: N
Q[G](typ @10V): 78.0nC
R[DS (on)](@10V) max: 2.3mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Package: SuperSO8 5x6 DSC
Special Features: Dual-Side Cooling
Budgetary Price €/1k: 1.48
BSC072N08NS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80V for telecom applications
I[Dpuls] max: 296.0A
Mounting: SMD
P[tot] max: 69.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 24.0nC
R[th]: 1.8K/W
R[thJA] max: 50.0K/W
R[thJC] max: 1.8K/W
V[DS] max: 80.0V
C[iss]: 1600.0pF
C[oss]: 280.0pF
R[DS (on)](@10V) max: 7.2mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 74.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.46
I[Dpuls] max: 480.0A
R[th]: 0.7K/W
P[tot] max: 214.0W
V[DS] max: 60.0V
Q[G](typ @10V): 106.0nC
Package: TO-220
Polarity: N
C[iss]: 7800.0pF
C[oss]: 1800.0pF
R[DS (on)](@10V) max: 2.0mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.36
IPP019N08NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 80 V in TO-220 package
I[D ](@25°C) max: 191.0A
I[Dpuls] max: 764.0A
Mounting: THT
P[tot] max: 250.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 124.0nC
R[DS (on)](@10V) max: 1.9mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.16
IPP016N06NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 60 V in TO-220 package
I[D ](@25°C) max: 194.0A
I[D ] max: 194.0A
I[Dpuls] max: 776.0A
Mounting: THT
P[tot] max: 250.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G]: 155.0nC
Q[G](typ @10V): 155.0nC
R[DS (on)] max: 1.6mΩ
R[DS (on)](@10V) max: 1.6mΩ
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Battery voltage: 24-66 V
Budgetary Price €/1k: 0.88
IPP023N08N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80V for telecom applications
I[Dpuls] max: 480.0A
Mounting: THT
P[tot] max: 300.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 133.0nC
R[th]: 0.5K/W
R[thJA] max: 62.0K/W
R[thJC] max: 0.5K/W
V[DS] max: 80.0V
C[iss]: 9300.0pF
C[oss]: 1500.0pF
R[DS (on)](@10V) max: 2.3mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.45
IPP034N08N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80V for telecom applications
I[Dpuls] max: 480.0A
Mounting: THT
P[tot] max: 167.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 69.0nC
R[th]: 0.9K/W
R[thJA] max: 62.0K/W
V[DS] max: 80.0V
C[iss]: 4800.0pF
C[oss]: 790.0pF
R[DS (on)](@10V) max: 3.4mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.01
IRFB7545
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Polarity: N
R[thJC] max: 1.21K/W
V[DS] max: 60.0V
Mounting: THT
Package: TO-220
P[tot] max: 125.0W
Q[gd]: 24.0nC
T[j] max: 175.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 5.9mΩ
V[GS(th)]: 2.9V
Q[G](typ @10V): 75.0nC
I[D ](@25°C) max: 95.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.31