IDpuls: NoneA
Rth: 0.5K/W
Ptot: NoneW
VDS: NoneV
QG(typ @10V): 155.0nC
Package: D2PAK (TO-263)
Polarity: N
Ciss: 10800.0pF
Coss: 2420.0pF
RDS (on)(@10V): NonemΩ
ID (@25°C): NoneA
VGS(th): 3.1V
Operating Temperature: None°C
Budgetary Price €/1k: 1.97
IRFZ48NS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: IR MOSFET 55 V in a D²PAK package
Moisture Sensitivity Level: 1
Package: D2PAK (TO-263)
Polarity: N
Q[gd]: 20.0nC
T[j] max: 175.0°C
V[DS] max: 55.0V
Mounting: SMD
P[tot] max: 140.0W
R[thJC] max: 1.1K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 14.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 54.0nC
I[D ](@25°C) max: 64.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.35
I[Dpuls] max: 200.0A
R[th]: 1.9K/W
P[tot] max: 79.0W
V[DS] max: 60.0V
Q[G](typ @4.5V): 22.0nC
Package: D2PAK (TO-263)
Polarity: N
C[iss]: 3700.0pF
C[oss]: 690.0pF
R[DS (on)](@10V) max: 8.1mΩ
R[DS (on)](@4.5V) max: 14.3mΩ
R[DS (on)](@4.5V LL) max: 14.3mΩ
I[D ](@25°C) max: 50.0A
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.41
IDpuls: NoneA
Rth: 0.8K/W
Ptot: NoneW
VDS: NoneV
QG(typ @10V): 124.0nC
Package: D2PAK (TO-263)
Polarity: N
Ciss: 10000.0pF
Coss: 2200.0pF
RDS (on)(@10V): NonemΩ
ID (@25°C): NoneA
VGS(th): 3.0V
Operating Temperature: None°C
Budgetary Price €/1k: 0.62
IRF3808S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Mounting: SMD
Package: D2PAK (TO-263)
Q[gd]: 50.0nC
V[DS] max: 75.0V
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Polarity: N
T[j] max: 175.0°C
P[tot] max: 200.0W
R[thJC] max: 0.75K/W
R[DS (on)](@10V) max: 7.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 150.0nC
Special Features: Wide SOA
I[D ](@25°C) max: 106.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.96
IRFS3107
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
R[thJC] max: 0.4K/W
T[j] max: 175.0°C
V[DS] max: 75.0V
Mounting: SMD
Package: D2PAK (TO-263)
Polarity: N
Q[gd]: 54.0nC
Moisture Sensitivity Level: 1
P[tot] max: 370.0W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 3.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 160.0nC
I[D ](@25°C) max: 230.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.33
IPB017N08N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package
R[th]: 0.4K/W
V[DS] max: 80.0V
P[tot] max: 375.0W
I[Dpuls] max: 480.0A
Q[G](typ @10V): 178.0nC
R[thJC] max: 0.4K/W
R[thJA] max: 62.0K/W
Pin Count: 3.0Pins
Package: D2PAK (TO-263)
Polarity: N
Mounting: SMD
C[iss]: 13000.0pF
C[oss]: 2000.0pF
R[DS (on)](@10V) max: 1.7mΩ
I[D ](@25°C) max: 177.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Battery voltage: 36-48 V
Budgetary Price €/1k: 1.98
IRF1010NS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: IR MOSFET 55 V in a D²PAK package
Mounting: SMD
Ptot: NoneW
VGS: NoneV
Moisture Sensitivity Level: 1
Package: D2PAK (TO-263)
Polarity: N
Qgd: 27.3nC
RthJC: NoneK/W
Tj: None°C
VDS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 80.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 0.46
IRF3205ZS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a D2Pak Package
Polarity: N
Q[gd]: 30.0nC
T[j] max: 175.0°C
Moisture Sensitivity Level: 1
Mounting: SMD
Package: D2PAK (TO-263)
P[tot] max: 170.0W
R[thJC] max: 0.9K/W
V[DS] max: 55.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 6.5mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 76.0nC
I[D ](@25°C) max: 110.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.47
R[th]: 1.6K/W
I[Dpuls] max: 200.0A
R[thJC] max: 1.6K/W
P[tot] max: 71.0W
V[DS] max: 60.0V
Q[G](typ @10V): 36.0nC
Package: D2PAK (TO-263)
Polarity: N
C[iss]: 2900.0pF
C[oss]: 640.0pF
R[DS (on)](@10V) max: 9.0mΩ
I[D ](@25°C) max: 50.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.33