IRLZ34NS


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 55V Single N-Channel Power MOSFET in a D2-Pak package

Mounting: SMD Package: D2PAK (TO-263) P[tot] max: 68.0W Q[gd]: 9.3nC T[j] max: 175.0°C V[GS] max: 16.0V Moisture Sensitivity Level: 1 Polarity: N R[thJC] max: 2.2K/W V[DS] max: 55.0V R[DS (on)](@10V) max: 35.0mΩ R[DS (on)](@4.5V) max: 60.0mΩ V[GS(th)]: 1.5V I[D ](@25°C) max: 30.0A Q[G](typ @4.5V): 16.7nC Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.33

IRF2907ZS


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Tj: None°C VGS: NoneV RthJC: NoneK/W Mounting: SMD Ptot: NoneW Moisture Sensitivity Level: 1 Package: D2PAK (TO-263) Polarity: N Qgd: 65.0nC VDS: NoneV RDS (on)(@10V): NonemΩ VGS(th): 3.0V QG(typ @10V): 180.0nC ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 1.15
Rth: 0.5K/W IDpuls: NoneA RthJC: NoneK/W Ptot: NoneW VDS: NoneV QG(typ @10V): 155.0nC Package: D2PAK (TO-263) Polarity: N Ciss: 10700.0pF Coss: 2890.0pF RDS (on)(@10V): NonemΩ ID (@25°C): NoneA VGS(th): 2.8V Operating Temperature: None°C Budgetary Price €/1k: 1.89

IPTC012N06NM5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFET 60 V in TOLT for excellent thermal performance

I[D ](@25°C) max: 311.0A I[Dpuls] max: 1244.0A Operating Temperature max: 175.0°C P[tot] max: 214.0W Package: TOLT (HDSOP-16) Polarity: N Q[G](typ @10V): 106.0nC R[DS (on)](@10V) max: 1.2mΩ V[DS] max: 60.0V V[GS(th)]: 2.8V Battery voltage: 24-66 V Budgetary Price €/1k: 2.15
Moisture Sensitivity Level: 1 Mounting: SMD Polarity: N P[tot] max: 110.0W R[thJC] max: 1.4K/W V[DS] max: 55.0V V[GS] max: 20.0V Package: D2PAK (TO-263) Q[gd]: 16.7nC T[j] max: 175.0°C R[DS (on)](@10V) max: 17.5mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 42.0nC I[D ](@25°C) max: 49.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.35

IRFS3806


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Mounting: SMD P[tot] max: 71.0W R[thJC] max: 2.12K/W V[DS] max: 60.0V Moisture Sensitivity Level: 1 Package: D2PAK (TO-263) Polarity: N Q[gd]: 6.3nC T[j] max: 175.0°C V[GS] max: 20.0V R[DS (on)](@10V) max: 15.8mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 22.0nC I[D ](@25°C) max: 43.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.38

IRFS7534


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Mounting: SMD P[tot] max: 294.0W V[GS] max: 20.0V Moisture Sensitivity Level: 1 Package: D2PAK (TO-263) Polarity: N Q[gd]: 56.0nC R[thJC] max: 0.51K/W T[j] max: 175.0°C V[DS] max: 60.0V R[DS (on)](@10V) max: 2.4mΩ V[GS(th)]: 2.9V Q[G](typ @10V): 186.0nC I[D ](@25°C) max: 195.0A Operating Temperature max: 175.0°C Battery voltage: 24-36 V Budgetary Price €/1k: 0.93
I[Dpuls] max: 180.0A R[th]: 1.8K/W P[tot] max: 83.0W V[DS] max: 60.0V Q[G](typ @10V): 27.0nC Package: D2PAK (TO-263) Polarity: N C[iss]: 2000.0pF C[oss]: 490.0pF R[DS (on)](@10V) max: 5.7mΩ I[D ](@25°C) max: 45.0A V[GS(th)]: 2.8V Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.45

IRF3007S


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Moisture Sensitivity Level: 1 Package: D2PAK (TO-263) Polarity: N Q[gd]: 30.0nC T[j] max: 175.0°C V[GS] max: 20.0V Mounting: SMD P[tot] max: 120.0W R[thJC] max: 1.25K/W V[DS] max: 75.0V R[DS (on)](@10V) max: 12.6mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 89.0nC I[D ](@25°C) max: 62.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.73

IRFS3207


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 75V Single N-Channel Power MOSFET in a D2-Pak package

Moisture Sensitivity Level: 1 Ptot: NoneW RthJC: NoneK/W VGS: NoneV Mounting: SMD Package: D2PAK (TO-263) Polarity: N Qgd: 68.0nC Tj: None°C VDS: NoneV RDS (on)(@10V): NonemΩ VGS(th): 3.0V QG(typ @10V): 180.0nC ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 1.13