IPD046N08N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Industry leading technology for telecom applications
I[Dpuls] max: 360.0A
Mounting: SMD
P[tot] max: 125.0W
Package: DPAK (TO-252)
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 42.0nC
Q[gd]: 9.0nC
R[th]: 0.7K/W
R[thJA] max: 75.0K/W
R[thJC] max: 1.2K/W
V[DS] max: 80.0V
R[DS (on)](@10V) max: 4.6mΩ
I[D ](@25°C) max: 90.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.86
I[Dpuls] max: 200.0A
R[th]: 2.1K/W
P[tot] max: 71.0W
V[DS] max: 60.0V
Q[G](typ @10V): 36.0nC
Package: DPAK (TO-252)
Polarity: N
C[iss]: 2900.0pF
C[oss]: 640.0pF
R[DS (on)](@10V) max: 8.8mΩ
I[D ](@25°C) max: 50.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.32
IRFR4105
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel IR MOSFET in a D-Pak package
Moisture Sensitivity Level: 1
Package: DPAK (TO-252)
Polarity: N
Q[gd]: 9.3nC
R[thJC] max: 2.7K/W
T[j] max: 175.0°C
V[DS] max: 55.0V
V[GS] max: 20.0V
Mounting: SMD
P[tot] max: 48.0W
R[DS (on)](@10V) max: 45.0mΩ
R[DS (on)](@10V) max: 45.0mΩ
V[GS(th)]: 3.0V
V[GS(th)]: 3.0V
Q[G](typ @10V): 22.7nC
Q[G](typ @10V): 22.7nC
I[D ](@25°C) max: 27.0A
I[D ](@25°C) max: 27.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.21
IRLR2905Z
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Moisture Sensitivity Level: 1
Package: DPAK (TO-252)
Polarity: N
Q[gd]: 12.0nC
T[j] max: 175.0°C
V[GS] max: 16.0V
Mounting: SMD
P[tot] max: 110.0W
R[thJC] max: 1.38K/W
V[DS] max: 55.0V
R[DS (on)](@10V) max: 13.5mΩ
R[DS (on)](@4.5V) max: 22.5mΩ
V[GS(th)]: 2.0V
I[D ](@25°C) max: 60.0A
Q[G](typ @4.5V): 23.0nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.31
IRFR2607Z
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Mounting: SMD
Package: DPAK (TO-252)
P[tot] max: 110.0W
R[thJC] max: 1.38K/W
V[DS] max: 75.0V
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Polarity: N
Q[gd]: 14.0nC
T[j] max: 175.0°C
R[DS (on)](@10V) max: 22.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 34.0nC
I[D ](@25°C) max: 45.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.49
IRFR48Z
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Mounting: SMD
Package: DPAK (TO-252)
Polarity: N
Q[gd]: 15.0nC
R[thJC] max: 1.64K/W
T[j] max: 175.0°C
V[DS] max: 55.0V
Moisture Sensitivity Level: 1
P[tot] max: 91.0W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 11.0mΩ
R[DS (on)](@10V) max: 11.0mΩ
V[GS(th)]: 3.0V
V[GS(th)]: 3.0V
Q[G](typ @10V): 40.0nC
Q[G](typ @10V): 40.0nC
I[D ](@25°C) max: 62.0A
I[D ](@25°C) max: 62.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.34
IRFR2307Z
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Mounting: SMD
Package: DPAK (TO-252)
Ptot: NoneW
Qgd: 19.0nC
Tj: None°C
VGS: NoneV
Moisture Sensitivity Level: 1
Polarity: N
RthJC: NoneK/W
VDS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 50.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 0.59
IRFR1018E
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel Power MOSFET in a DPAK package
Moisture Sensitivity Level: 1
Polarity: N
R[thJC] max: 1.32K/W
V[DS] max: 60.0V
Mounting: SMD
Package: DPAK (TO-252)
P[tot] max: 110.0W
Q[gd]: 12.0nC
T[j] max: 175.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 8.4mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 46.0nC
I[D ](@25°C) max: 79.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.45
IRF7749L1
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 33 amperes optimized with low on resistance.
Moisture Sensitivity Level: 1
Polarity: N
P[tot] max: 125.0W
Q[gd]: 71.0nC
T[j] max: 175.0°C
V[GS] max: 20.0V
Mounting: SMD
P[tot](@ T[A]=25°C) max: 3.3W
R[thJA] max: 45.0K/W
V[DS] max: 60.0V
R[DS (on)](@10V) max: 1.5mΩ
V[GS(th)]: 2.9V
Q[G](typ @10V): 200.0nC
Micro-stencil: IRF66L8-25
I[D ](@25°C) max: 200.0A
Package: DirectFET (L)
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.89
IRF6646
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 80V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MN package
Mounting: SMD
P[tot](@ T[A]=25°C) max: 2.8W
R[thJC] max: 1.4K/W
V[DS] max: 80.0V
Moisture Sensitivity Level: 1
Polarity: N
P[tot] max: 89.0W
Q[gd]: 12.0nC
T[j] max: 150.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 9.5mΩ
V[GS(th)]: 3.95V
Q[G](typ @10V): 36.0nC
Micro-stencil: IRF66MN-25
I[D ](@25°C) max: 68.0A
Package: DirectFET (M)
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.69