V[DS] max: 80.0V
P[tot] max: 42.0W
I[Dpuls] max: 200.0A
Q[G](typ @10V): 23.0nC
R[th]: 3.0K/W
R[thJC] max: 3.0K/W
R[thJA] max: 45.0K/W
Polarity: N
C[iss]: 1600.0pF
C[oss]: 430.0pF
R[DS (on)](@10V) max: 10.4mΩ
Micro-stencil: IRF66MP-25
I[D ](@25°C) max: 50.0A
V[GS(th)]: 2.7V
Package: DirectFET (M)
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.4
Budgetary Price €/1k: 0.4
I[Dpuls] max: 360.0A
R[th]: 1.0K/W
P[tot] max: 78.0W
V[DS] max: 60.0V
Q[G](typ @10V): 108.0nC
Polarity: N
C[iss]: 8800.0pF
C[oss]: 2100.0pF
R[DS (on)](@10V) max: 2.8mΩ
Micro-stencil: IRF66MN-25
I[D ](@25°C) max: 90.0A
V[GS(th)]: 3.0V
Package: DirectFET (M)
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.89
IRF6648
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MN package
Moisture Sensitivity Level: 1
Polarity: N
Mounting: SMD
P[tot](@ T[A]=25°C) max: 2.8W
P[tot] max: 89.0W
Q[gd]: 14.0nC
R[thJC] max: 1.4K/W
T[j] max: 150.0°C
V[DS] max: 60.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 7.0mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 36.0nC
Micro-stencil: IRF66MN-25
I[D ](@25°C) max: 86.0A
Package: DirectFET (M)
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.73
IRF6674
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MX package
Q[gd]: 8.3nC
T[j] max: 150.0°C
V[GS] max: 20.0V
Mounting: SMD
P[tot](@ T[A]=25°C) max: 3.6W
R[thJC] max: 1.4K/W
V[DS] max: 60.0V
Moisture Sensitivity Level: 1
Polarity: N
P[tot] max: 89.0W
R[DS (on)](@10V) max: 11.0mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 24.0nC
Micro-stencil: IRF66MZ-25
I[D ](@25°C) max: 67.0A
Package: DirectFET (M)
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.69
IRFSL3206
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel Power MOSFET in a TO-262 package
Mounting: THT
Polarity: N
Ptot: NoneW
RthJC: NoneK/W
VGS: NoneV
Package: I2PAK (TO-262)
Qgd: 35.0nC
Tj: None°C
VDS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 120.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 0.94
IRLU024N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a I-Pak package
Mounting: THT
P[tot] max: 38.0W
R[thJC] max: 3.3K/W
V[DS] max: 55.0V
Package: IPAK (TO-251)
Polarity: N
Q[gd]: 5.7nC
T[j] max: 175.0°C
V[GS] max: 16.0V
R[DS (on)](@10V) max: 65.0mΩ
R[DS (on)](@4.5V) max: 110.0mΩ
V[GS(th)]: 1.5V
I[D ](@25°C) max: 17.0A
Q[G](typ @4.5V): 10.0nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.24
I[Dpuls] max: 92.0A
R[th]: 3.9K/W
P[tot] max: 32.0W
V[DS] max: 80.0V
Q[G](typ @10V): 6.8nC
Polarity: N
C[iss]: 470.0pF
C[oss]: 130.0pF
R[DS (on)](@10V) max: 34.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 23.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.23
IRFU3607
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel Power MOSFET in a I-Pak package
Mounting: THT
P[tot] max: 140.0W
Package: IPAK (TO-251)
Polarity: N
Q[gd]: 16.0nC
R[thJC] max: 1.05K/W
T[j] max: 175.0°C
V[DS] max: 75.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 9.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 56.0nC
I[D ](@25°C) max: 80.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.42
IRFSL3306
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel Power MOSFET in a TO-262 package
Mounting: THT
Package: I2PAK (TO-262)
Ptot: NoneW
RthJC: NoneK/W
VDS: NoneV
VGS: NoneV
Polarity: N
Qgd: 26.0nC
Tj: None°C
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 85.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 0.77
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.23
I[Dpuls] max: 212.0A
R[th]: 2.5K/W
P[tot] max: 50.0W
V[DS] max: 60.0V
Q[G](typ @10V): 25.0nC
Polarity: N
C[iss]: 2000.0pF
C[oss]: 440.0pF
R[DS (on)](@10V) max: 11.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 53.0A
V[GS(th)]: 3.0V