IRFB7537
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Mounting: THT
P[tot] max: 230.0W
V[GS] max: 20.0V
Package: TO-220
Polarity: N
Q[gd]: 43.0nC
R[thJC] max: 0.65K/W
T[j] max: 175.0°C
V[DS] max: 60.0V
R[DS (on)](@10V) max: 3.3mΩ
V[GS(th)]: 2.9V
Q[G](typ @10V): 142.0nC
I[D ](@25°C) max: 173.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.66
IRL3705N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
P[tot] max: 130.0W
Q[gd]: 32.7nC
R[thJC] max: 1.2K/W
T[j] max: 175.0°C
V[DS] max: 55.0V
V[GS] max: 16.0V
Mounting: THT
R[DS (on)](@10V) max: 10.0mΩ
V[GS(th)]: 1.5V
I[D ](@25°C) max: 89.0A
Q[G](typ @4.5V): 65.3nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.6
I[Dpuls] max: 200.0A
R[th]: 1.8K/W
P[tot] max: 69.0W
V[DS] max: 60.0V
Q[G](typ @4.5V): 23.0nC
Polarity: N
C[iss]: 3800.0pF
C[oss]: 710.0pF
Q[G](typ @10V): 51.0nC
R[DS (on)](@10V) max: 6.7mΩ
R[DS (on)](@4.5V) max: 12.1mΩ
R[DS (on)](@4.5V LL) max: 12.1mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 50.0A
V[GS(th)]: 1.7V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.37
IRFZ44N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55 V Single N-Channel Power MOSFET in a TO-220 package
Package: TO-220
T[j] max: 175.0°C
Mounting: THT
Polarity: N
P[tot] max: 83.0W
Q[gd]: 15.3nC
R[thJC] max: 1.8K/W
V[DS] max: 55.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 17.5mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 42.0nC
I[D ](@25°C) max: 49.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.28
IRFB3306
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
T[j] max: 175.0°C
V[GS] max: 20.0V
Q[gd]: 26.0nC
Mounting: THT
Package: TO-220
P[tot] max: 230.0W
Polarity: N
R[thJC] max: 0.65K/W
V[DS] max: 60.0V
R[DS (on)](@10V) max: 4.2mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 85.0nC
I[D ](@25°C) max: 160.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.6
I[Dpuls] max: 400.0A
R[th]: 0.7K/W
P[tot] max: 214.0W
V[DS] max: 75.0V
Q[G](typ @10V): 88.0nC
Package: TO-220
Polarity: N
C[iss]: 6110.0pF
C[oss]: 1380.0pF
R[DS (on)](@10V) max: 3.4mΩ
I[D ](@25°C) max: 100.0A
V[GS(th)]: 3.1V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.01
IRF1010EZ
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel Power MOSFET in a TO-220 package
Mounting: THT
Package: TO-220
Polarity: N
Qgd: 21.0nC
Tj: None°C
VGS: NoneV
Ptot: NoneW
RthJC: NoneK/W
VDS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 58.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 0.37
IRF3205Z
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a TO-220 package
Mounting: THT
Polarity: N
P[tot] max: 170.0W
Q[gd]: 30.0nC
R[thJC] max: 0.9K/W
V[DS] max: 55.0V
V[GS] max: 20.0V
Package: TO-220
T[j] max: 175.0°C
R[DS (on)](@10V) max: 6.5mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 76.0nC
I[D ](@25°C) max: 110.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.41
I[Dpuls] max: 220.0A
R[th]: 1.9K/W
P[tot] max: 66.0W
V[DS] max: 80.0V
Q[G](typ @10V): 19.0nC
Polarity: N
C[iss]: 1430.0pF
C[oss]: 385.0pF
R[DS (on)](@10V) max: 12.3mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 55.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.31
IRF1018E
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Mounting: THT
Package: TO-220
Polarity: N
Q[gd]: 12.0nC
T[j] max: 175.0°C
V[DS] max: 60.0V
P[tot] max: 110.0W
R[thJC] max: 1.32K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 8.4mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 46.0nC
I[D ](@25°C) max: 79.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.33