IRFB3307Z
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Ptot: NoneW
Tj: None°C
Mounting: THT
Package: TO-220
Polarity: N
Qgd: 24.0nC
RthJC: NoneK/W
VDS: NoneV
VGS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 79.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 0.73
IRFB3077
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel IR MOSFET™ in a TO-220AB package
Package: TO-220
Polarity: N
Q[gd]: 42.0nC
R[thJC] max: 0.4K/W
V[DS] max: 75.0V
Mounting: THT
P[tot] max: 370.0W
T[j] max: 175.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 3.3mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 160.0nC
I[D ](@25°C) max: 210.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.12
Budgetary Price €/1k: 1.12
IRF2805
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
Q[gd]: 52.0nC
R[thJC] max: 0.45K/W
V[DS] max: 55.0V
V[GS] max: 20.0V
Mounting: THT
P[tot] max: 330.0W
T[j] max: 175.0°C
R[DS (on)](@10V) max: 4.7mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 150.0nC
Special Features: Wide SOA
I[D ](@25°C) max: 175.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.7
IRFH7545
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 Option E package
Moisture Sensitivity Level: 1
Polarity: N
Q[gd]: 22.0nC
V[DS] max: 60.0V
Mounting: SMD
P[tot] max: 83.0W
R[thJC] max: 1.5K/W
T[j] max: 150.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 5.2mΩ
V[GS(th)]: 2.9V
Q[G](typ @10V): 73.0nC
I[D ](@25°C) max: 85.0A
Package: SuperSO8 5x6
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.34
IRF3205
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a TO-220 package
Package: TO-220
V[DS] max: 55.0V
Q[gd]: 36.0nC
V[GS] max: 20.0V
Mounting: THT
Polarity: N
P[tot] max: 150.0W
R[thJC] max: 1.0K/W
T[j] max: 175.0°C
R[DS (on)](@10V) max: 8.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 97.3nC
I[D ](@25°C) max: 110.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.4
I[Dpuls] max: 400.0A
R[th]: 0.5K/W
P[tot] max: 300.0W
V[DS] max: 80.0V
Q[G](typ @10V): 155.0nC
Package: TO-220
Polarity: N
C[iss]: 10700.0pF
C[oss]: 2890.0pF
R[DS (on)](@10V) max: 2.8mΩ
I[D ](@25°C) max: 100.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.62
I[Dpuls] max: 480.0A
R[th]: 0.8K/W
P[tot] max: 188.0W
V[DS] max: 60.0V
Q[G](typ @10V): 124.0nC
Package: TO-220
Polarity: N
C[iss]: 10000.0pF
C[oss]: 2200.0pF
R[DS (on)](@10V) max: 3.2mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.65
IRF1010E
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel Power MOSFET in a TO-220 package
T[j] max: 175.0°C
Mounting: THT
Q[gd]: 29.3nC
V[DS] max: 60.0V
Package: TO-220
Polarity: N
P[tot] max: 170.0W
R[thJC] max: 0.9K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 12.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 86.6nC
I[D ](@25°C) max: 84.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.44
IPP020N08N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80V for telecom applications
R[th]: 0.4K/W
V[DS] max: 80.0V
P[tot] max: 375.0W
I[Dpuls] max: 480.0A
Q[G](typ @10V): 178.0nC
R[thJC] max: 0.4K/W
R[thJA] max: 62.0K/W
Pin Count: 3.0Pins
Package: TO-220
Polarity: N
Mounting: THT
C[iss]: 13000.0pF
C[oss]: 2000.0pF
R[DS (on)](@10V) max: 2.0mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.98
IRFB3207
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
Ptot: NoneW
RthJC: NoneK/W
VGS: NoneV
Mounting: THT
Qgd: 68.0nC
Tj: None°C
VDS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 180.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 1.4