IRFB7534
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
T[j] max: 175.0°C
P[tot] max: 294.0W
V[DS] max: 60.0V
V[GS] max: 20.0V
R[thJC] max: 0.51K/W
Mounting: THT
Package: TO-220
Polarity: N
Q[gd]: 56.0nC
R[DS (on)](@10V) max: 2.4mΩ
V[GS(th)]: 2.9V
Q[G](typ @10V): 186.0nC
I[D ](@25°C) max: 195.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.73
I[Dpuls] max: 400.0A
R[th]: 0.7K/W
P[tot] max: 214.0W
V[DS] max: 80.0V
Q[G](typ @10V): 88.0nC
Package: TO-220
Polarity: N
C[iss]: 6100.0pF
C[oss]: 1640.0pF
R[DS (on)](@10V) max: 3.75mΩ
I[D ](@25°C) max: 100.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.85
IRFZ34N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a TO-220 package
Package: TO-220
Q[gd]: 9.3nC
T[j] max: 175.0°C
V[DS] max: 55.0V
V[GS] max: 20.0V
Mounting: THT
Polarity: N
P[tot] max: 56.0W
R[thJC] max: 2.7K/W
R[DS (on)](@10V) max: 40.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 22.7nC
I[D ](@25°C) max: 29.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.22
IPA040N06NM5S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 60V in TO-220 FullPAK package (IPA040N06NM5S)
I[D ](@ T[C]=25°C) max: 72.0A
I[D ](@25°C) max: 72.0A
I[Dpuls] max: 288.0A
P[tot] max: 36.0W
Polarity: N
Q[G](typ @10V): 38.0nC
R[DS (on)](@10V) max: 4.0mΩ
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Package: TO-220 FullPAK
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.66
IRFB3006
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel IR MOSFET™ in a TO-220AB package
Package: TO-220
Polarity: N
Q[gd]: 60.0nC
R[thJC] max: 0.4K/W
T[j] max: 175.0°C
V[DS] max: 60.0V
V[GS] max: 20.0V
Mounting: THT
P[tot] max: 375.0W
R[DS (on)](@10V) max: 2.5mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 200.0nC
I[D ](@25°C) max: 270.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.22
Budgetary Price €/1k: 1.22
IPA052N08NM5S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80V in TO-220 FullPAK package (IPA052N08NM5S)
I[D ](@ T[C]=25°C) max: 64.0A
I[D ](@25°C) max: 64.0A
I[Dpuls] max: 256.0A
P[tot] max: 38.0W
Polarity: N
Q[G](typ @10V): 42.0nC
Q[G](typ @10V): 42.0nC
R[DS (on)](@10V) max: 5.2mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Package: TO-220 FullPAK
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.77
I[Dpuls] max: 240.0A
R[th]: 3.8K/W
P[tot] max: 39.0W
V[DS] max: 80.0V
Q[G](typ @10V): 52.0nC
Package: TO-220 FullPAK
Polarity: N
C[iss]: 3570.0pF
C[oss]: 963.0pF
R[DS (on)](@10V) max: 5.7mΩ
I[D ](@25°C) max: 60.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.64
IRFI3205
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a TO-220 FullPak package
Mounting: THT
Polarity: N
P[tot] max: 48.0W
Q[gd]: 49.3nC
R[thJC] max: 2.4K/W
T[j] max: 175.0°C
V[DS] max: 55.0V
V[GS] max: 20.0V
Package: TO-220 FullPAK
R[DS (on)](@10V) max: 8.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 113.3nC
I[D ](@25°C) max: 64.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.75
V[DS] max: 60.0V
P[tot] max: 36.0W
I[Dpuls] max: 276.0A
Q[G](typ @10V): 38.0nC
R[th]: 4.2K/W
R[thJC] max: 4.2K/W
Pin Count: 3.0Pins
Package: TO-220 FullPAK
Polarity: N
Mounting: THT
C[iss]: 2700.0pF
C[oss]: 670.0pF
R[DS (on)](@10V) max: 4.0mΩ
I[D ](@25°C) max: 69.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.7
IRFP3306
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 package
Mounting: THT
Polarity: N
P[tot] max: 220.0W
Q[gd]: 26.0nC
R[thJC] max: 0.67K/W
V[DS] max: 60.0V
V[GS] max: 20.0V
Package: TO-247
T[j] max: 175.0°C
R[DS (on)](@10V) max: 4.2mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 85.0nC
I[D ](@25°C) max: 160.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.03