I[Dpuls] max: 180.0A
R[th]: 4.0K/W
P[tot] max: 37.5W
V[DS] max: 100.0V
Q[G](typ @10V): 42.0nC
Package: TO-220 FullPAK
Polarity: N
C[iss]: 2990.0pF
C[oss]: 523.0pF
R[DS (on)](@10V) max: 8.6mΩ
I[D ](@25°C) max: 45.0A
V[GS(th)]: 2.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.65
IRFI1310N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel Power MOSFET in a TO-220 FullPak package
Tj: None°C
Mounting: THT
Polarity: N
Ptot: NoneW
Qgd: 38.7nC
RthJC: NoneK/W
VDS: NoneV
VGS: NoneV
Package: TO-220 FullPAK
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 80.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 0.64
I[Dpuls] max: 256.0A
R[th]: 3.8K/W
P[tot] max: 39.0W
V[DS] max: 100.0V
Q[G](typ @10V): 88.0nC
Package: TO-220 FullPAK
Polarity: N
C[iss]: 6320.0pF
C[oss]: 1100.0pF
R[DS (on)](@10V) max: 4.5mΩ
I[D ](@25°C) max: 64.0A
V[GS(th)]: 2.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.03
IPA050N10NM5S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 100V in TO-220 FullPAK package (IPA050N10NM5S)
I[D ](@ T[C]=25°C) max: 66.0A
I[D ](@25°C) max: 66.0A
I[Dpuls] max: 264.0A
P[tot] max: 38.0W
Polarity: N
Q[G](typ @10V): 51.0nC
R[DS (on)](@10V) max: 5.0mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
Package: TO-220 FullPAK
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.83
I[Dpuls] max: 172.0A
R[th]: 3.8K/W
P[tot] max: 39.0W
V[DS] max: 150.0V
Q[G](typ @10V): 70.0nC
Package: TO-220 FullPAK
Polarity: N
C[iss]: 5470.0pF
C[oss]: 638.0pF
R[DS (on)](@10V) max: 7.5mΩ
I[D ](@25°C) max: 43.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 2.57
IRF3710
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel Power MOSFET in a TO-220 package
Q[gd]: 28.0nC
V[GS] max: 20.0V
Mounting: THT
T[j] max: 175.0°C
Package: TO-220
Polarity: N
P[tot] max: 200.0W
R[thJC] max: 0.75K/W
V[DS] max: 100.0V
R[DS (on)](@10V) max: 23.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 86.7nC
I[D ](@25°C) max: 57.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.55
IRFB260N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
Q[gd]: 67.0nC
R[thJC] max: 0.4K/W
T[j] max: 175.0°C
V[DS] max: 200.0V
V[GS] max: 20.0V
Mounting: THT
P[tot] max: 380.0W
R[DS (on)](@10V) max: 40.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 150.0nC
I[D ](@25°C) max: 56.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.99
IRFP250M
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel Power MOSFET in a TO-247 M series package
Mounting: THT
Polarity: N
Ptot: NoneW
RthJC: NoneK/W
VDS: NoneV
VGS: NoneV
Package: TO-247
Qgd: 38.0nC
Tj: None°C
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 82.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 0.84
IRFP260M
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel Power MOSFET in a TO-247 M series package
Package: TO-247
Polarity: N
P[tot] max: 300.0W
Q[gd]: 73.3nC
R[thJC] max: 0.5K/W
T[j] max: 175.0°C
V[DS] max: 200.0V
V[GS] max: 20.0V
Mounting: THT
R[DS (on)](@10V) max: 40.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 156.0nC
I[D ](@25°C) max: 50.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.1
IRFP90N20D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel Power MOSFET in a TO-247 package
Mounting: THT
Polarity: N
R[thJC] max: 0.26K/W
V[DS] max: 200.0V
Package: TO-247
P[tot] max: 580.0W
Q[gd]: 87.0nC
T[j] max: 175.0°C
V[GS] max: 30.0V
R[DS (on)](@10V) max: 23.0mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 180.0nC
I[D ](@25°C) max: 94.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 2.14