状态: Active
Compliance: Pb A H P
Configuration: Two Channel Boost
VBR Max (V): 1200
RDS(on) Typ (mΩ): 40
Application: Solar Inverter, Energy Infrastructure
Package Type: Q0
MSL Type: NA
MSL Temp (°C): 0
ON Target: Y
Reference Price: $62.829
状态: Active
Compliance: Pb A H P
Configuration: Three Channel Boost
VBR Max (V): 1200
RDS(on) Typ (mΩ): 40
Application: Solar Inverter, Energy Infrastructure
Package Type: Q1
MSL Type: NA
MSL Temp (°C): 0
ON Target: Y
Reference Price: $81.5478
状态: Active
Compliance: Pb A H P
Configuration: Two Channel Boost
VBR Max (V): 1200
RDS(on) Typ (mΩ): 80
Application: Solar Inverter, Energy Infrastructure
Package Type: Q0
MSL Type: NA
MSL Temp (°C): 0
ON Target: Y
Reference Price: $47.7349
Configuration: Discrete
I[D ](@100°C) max: -0.33A
I[D ](@25°C) max: -0.53A
V[F] max: -5.0V
Package: UB
Polarity: P
V[BRDSS] min: -60.0V
QPL Part Number: 2N7626UB
TID max: 100.0Krad(Si)
ESD Class: Class 0
R[DS (on)](@25°C) max: 1300.0mΩ
Generation: R7
Optional TID Rating(kRad(si)): 100 300
Qualification: DLA
Q[G]: 3.6nC
Die Size: 2
Language: SPICE
Voltage Class: 100.0V
Product Category: Rad hard MOSFETS
IPT010N08NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Single N-Channel OptiMOS™ 5 power MOSFET 80V 1.05mΩ 425A in a TOLL package
I[D ](@25°C) max: 425.0A
I[D ] max: 425.0A
I[Dpuls] max: 1700.0A
Mounting: SMT
P[tot] max: 375.0W
Package: TOLL (HSOF-8)
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 178.0nC
Q[G]: 178.0nC
R[DS (on)](@10V) max: 1.05mΩ
R[DS (on)] max: 1.05mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Battery voltage: 36-48 V
Budgetary Price €/1k: 2.89
IQD005N04NM6SC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down DSC package with very low RDS(on).
I[D ](@25°C) max: 597.0A
Operating Temperature max: 175.0°C
Package: PQFN 5x6 Source-Down
Polarity: N
Q[G](typ @10V): 130.0nC
R[DS (on)](@10V) max: 0.49mΩ
V[DS] max: 40.0V
V[GS(th)]: 2.3V
IQDH29NE2LM5CGSC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 25 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on)
I[D ](@25°C) max: 789.0A
Operating Temperature max: 150.0°C
Package: PQFN 5x6 Source-Down
Polarity: N
Q[G](typ @4.5V): 88.0nC
Q[G](typ @10V): 191.0nC
R[DS (on)](@10V) max: 0.29mΩ
R[DS (on)](@4.5V) max: 0.35mΩ
V[DS] max: 25.0V
V[GS(th)]: 1.6V
IQDH35N03LM5CGSC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 30 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on)
I[D ](@25°C) max: 700.0A
Operating Temperature max: 150.0°C
Package: PQFN 5x6 Source-Down
Polarity: N
Q[G](typ @4.5V): 91.0nC
Q[G](typ @10V): 197.0nC
R[DS (on)](@10V) max: 0.35mΩ
R[DS (on)](@4.5V) max: 0.4mΩ
V[DS] max: 30.0V
V[GS(th)]: 1.6V
IQDH29NE2LM5SC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 25 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on)
I[D ](@25°C) max: 789.0A
Operating Temperature max: 150.0°C
Package: PQFN 5x6 Source-Down
Polarity: N
Q[G](typ @4.5V): 88.0nC
Q[G](typ @10V): 191.0nC
R[DS (on)](@10V) max: 0.29mΩ
R[DS (on)](@4.5V) max: 0.35mΩ
V[DS] max: 25.0V
V[GS(th)]: 1.6V
IQDH35N03LM5SC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 30 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on).
I[D ](@25°C) max: 700.0A
Operating Temperature max: 150.0°C
Package: PQFN 5x6 Source-Down
Polarity: N
Q[G](typ @4.5V): 91.0nC
Q[G](typ @10V): 197.0nC
R[DS (on)](@10V) max: 0.35mΩ
R[DS (on)](@4.5V) max: 0.4mΩ
V[DS] max: 30.0V
V[GS(th)]: 1.6V