FDB070AN06A0

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N 沟道 Power Trench® MOSFET 60V,80A,7mΩ

状态: Active Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: D2PAK Type: Low-Medium Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 60 RDS(on) Max @ VGS = 10 V (mΩ): 7 Vgs (V): 20 Vgs(th) Max (V): 4 ID Max (A): 80 PD Max (W): 175 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 51
Ciss Typ (pF): 3000 Qgd Typ @ VGS = 4.5 V (nC): 16 Qrr Typ (nC): 35 Coss Typ (pF): 510 Crss Typ (pF): 230 Package Type: D2PAK-3 / TO-263-2 MSL Type: 1 MSL Temp (°C): 245 ON Target: Y Reference Price: $1.6222

2N7000-D74Z

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N沟道增强模式场效应晶体管60V,200mA,5Ω

状态: Lifetime 相似产品推荐 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: TO-92 Type: Small Signal Gate Level: Logic Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 60 RDS(on) Max @ VGS = 10 V (mΩ): 5000 VGS Max (V): 20 Vgs(th) Max (V): 3 Id Max (A): 0.2 PD Max (W): 0.35 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): 5300 Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): -
Ciss Typ (pF): 60 Qgd Typ @ VGS = 4.5 V (nC): - Qrr Typ (nC): - Coss Typ (pF): 25 Crss Typ (pF): 5 Package Type: TO-92-3 LF MSL Type: NA MSL Temp (°C): 0 ON Target: N Reference Price: $0.1033

2N7002L

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N 沟道小信号 MOSFET 60V,115mA,7.5 Ω

状态: Active Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: SOT-23 Type: Small Signal Gate Level: Logic Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 60 RDS(on) Max @ VGS = 10 V (mΩ): 7500 VGS Max (V): ±20 Vgs(th) Max (V): 2.5 Id Max (A): 0.115 PD Max (W): 0.225 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): 7500 Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): -
Ciss Typ (pF): 50 Qgd Typ @ VGS = 4.5 V (nC): - Qrr Typ (nC): - Coss Typ (pF): 25 Crss Typ (pF): 5 Package Type: SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P MSL Type: 1 MSL Temp (°C): 260 ON Target: N Reference Price: $0.028

2N7002LT7G

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: SOT23,N沟道MOSFET - 60V 115MA 7.5Ohm

状态: Lifetime 相似产品推荐 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: SOT-23 Type: Small Signal Gate Level: Logic Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 60 RDS(on) Max @ VGS = 10 V (mΩ): 7500 VGS Max (V): 20 Vgs(th) Max (V): 2.5 Id Max (A): 0.115 PD Max (W): 0.225 RDS(on) Max @ VGS = 2.5 V (mΩ): ~NA~ RDS(on) Max @ VGS = 4.5 V (mΩ): 7500 Qg Typ @ VGS = 4.5 V (nC): ~NA~ Qg Typ @ VGS = 10 V (nC): ~NA~
Ciss Typ (pF): 50 Qgd Typ @ VGS = 4.5 V (nC): ~NA~ Qrr Typ (nC): ~NA~ Coss Typ (pF): 25 Crss Typ (pF): 5 Package Type: SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P MSL Type: 1 MSL Temp (°C): 260 ON Target: N Reference Price: $0.0245

2N7002T

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N 沟道增强型场效应晶体管 60V,115mA,2Ω

状态: Lifetime 相似产品推荐 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: SC-3 Type: Small Signal Gate Level: Logic Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 60 RDS(on) Max @ VGS = 10 V (mΩ): 2000 VGS Max (V): ±20 Vgs(th) Max (V): 2 Id Max (A): 0.115 PD Max (W): 0.2 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): 7500 Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): -
Ciss Typ (pF): 37.8 Qgd Typ @ VGS = 4.5 V (nC): - Qrr Typ (nC): - Coss Typ (pF): 12.4 Crss Typ (pF): 6.5 Package Type: SOT-523FL MSL Type: 1 MSL Temp (°C): 260 ON Target: N Reference Price: $0.0709

2N7002V

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N沟道增强模型场效应晶体管

状态: Lifetime 相似产品推荐 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: SC-6 Type: Small Signal Gate Level: Logic Wide SOA Mosfets: 0 Configuration: Dual OPN in older Technology: 0 V(BR)DSS Min (V): 60 RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=2000 VGS Max (V): ±20 Vgs(th) Max (V): 2.5 Id Max (A): 0.28 PD Max (W): 0.25 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=7500 Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): -
Ciss Typ (pF): 37.8 Qgd Typ @ VGS = 4.5 V (nC): - Qrr Typ (nC): - Coss Typ (pF): 12.4 Crss Typ (pF): 6.5 Package Type: SOT-563 MSL Type: 1 MSL Temp (°C): 260 ON Target: N Reference Price: $0.1319

2N7002VA

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N 沟道增强型场效应晶体管 60V,0.28A,2Ω

状态: Lifetime 相似产品推荐 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: SC-6 Type: Small Signal Gate Level: Logic Wide SOA Mosfets: 0 Configuration: Dual OPN in older Technology: 0 V(BR)DSS Min (V): 60 RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=2000 VGS Max (V): ±20 Vgs(th) Max (V): 2.5 Id Max (A): 0.28 PD Max (W): 0.25 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=7500 Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): -
Ciss Typ (pF): 37.8 Qgd Typ @ VGS = 4.5 V (nC): - Qrr Typ (nC): - Coss Typ (pF): 12.4 Crss Typ (pF): 6.5 Package Type: SOT-563 MSL Type: 1 MSL Temp (°C): 260 ON Target: N Reference Price: $0.2783

FTCO3V455A2

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 汽车功率集成模块 (PIM)MOSFET 40V,150A

状态: Active Compliance: Pb A H P Configuration: 3-phase Inverter with Sense Resistor VBR Max (V): 40 RDS(on) Max (mΩ): 1.66 Package Type: 19LD APM PDD STD MSL Type: NA MSL Temp (°C): 0 ON Target: N Reference Price: Price N/A

NXV04V120DB1

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 三相逆变器汽车功率模块APM19

状态: Active Compliance: Pb A H P Configuration: 3-phase Inverter with Sense Resistor VBR Max (V): 40 RDS(on) Max (mΩ): 1.2 Package Type: 19LD, APM, PDD STD (APM19-CBC) MSL Type: NA MSL Temp (°C): 0 ON Target: Y Reference Price: $18.5982
状态: Product Preview Compliance: Pb A H P Configuration: Half-Bridge VBR Max (V): 1200 RDS(on) Typ (mΩ): 2.6 Application: Automotive Traction Inverter Package Type: AHPM15−CDE AUTOMOTIVE MODULE MSL Type: NA MSL Temp (°C): 0 ON Target: F Reference Price: Price N/A