IGI60F2020A1L
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Integrated Power Stage (IPS) half-bridge 600 V to deliver high density, high efficiency solution
QG: 1.5nC
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 200.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
IGI60F2727A1L
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Integrated Power Stage (IPS) half-bridge 600 V to deliver high density, high efficiency solution
QG: 1.2nC
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 270.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
Mounting: SMT
QG: 0.58nC
VDS: NoneV
RDS (on)(typ): 500.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
IGLD60R190D1S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
Mounting: SMT
QG: 3.2nC
VDS: NoneV
RDS (on)(typ): 140.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
GS-065-004-1-L-TR
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability
ID (@25°C): NoneA
IDpuls(@25°C): NoneA
Mounting: SMT
QG: 0.8nC
RDS (on)(typ): 450.0mΩ
RDS (on): NonemΩ
VDS: NoneV
Generation: ≤ G3
IGI60F5050A1L
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Integrated Power Stage (IPS) half-bridge 600 V to deliver high density, high efficiency solution
QG: 0.58nC
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 500.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
IGLD60R190D1
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
Mounting: SMT
Package: LSON-8-1
Polarity: N
QG: 3.2nC
VDS: NoneV
VGS(th): 1.2V
RDS (on)(typ): 140.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 140.0mΩ
Generation: G5
RDS (on): NonemΩ
状态: 量产中
Compliance: Pb A H P
Family: -
V(BR)CES Typ (V): 650
IC Max (A): 40
VCE(sat) Typ (V): 1.55
VF Typ (V): 1.68
Eoff Typ (mJ): 0.75
Eon Typ (mJ): 1.18
Trr Typ (ns): 52
Irr Typ (A): 20
Gate Charge Typ (nC): 51
Short Circuit Withstand (µs): 5
EAS Typ (mJ): ~NA~
PD Max (W): 339.37
Co-Packaged Diode: Yes
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $1.7729
状态: 量产中
Compliance: Pb A H P
Family: -
V(BR)CES Typ (V): 650
IC Max (A): 40
VCE(sat) Typ (V): 1.6
VF Typ (V): 1.5
Eoff Typ (mJ): 0.229
Eon Typ (mJ): 0.858
Trr Typ (ns): 131
Irr Typ (A): -
Gate Charge Typ (nC): 76
Short Circuit Withstand (µs): -
EAS Typ (mJ): -
PD Max (W): 238
Co-Packaged Diode: Yes
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: $2.6054