IGLD60R190D1
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
物料参数
| Mounting: | SMT |
| Package: | LSON-8-1 |
| Polarity: | N |
| QG: | 3.2nC |
| VDS: | NoneV |
| VGS(th): | 1.2V |
| RDS (on)(typ): | 140.0mΩ |
| ID (@ TA=25°C): | NoneA |
| IDpuls(@25°C): | NoneA |
| Generation: | ≤ G3 |