V[DS] max: -20.0V
P[tot] max: 2.5W
I[Dpuls] max: -13.0A
V[GS(th)] max: -0.7V
V[GS(th)] max: 1.4V
R[th]: 8.0K/W
R[thJC] max: 8.0K/W
R[thJA] max: 60.0K/W
Operating Temperature max: 175.0°C
Pin Count: 8.0Pins
Mounting: SMD
Mode: Enhancement
I[Dpuls] max: 20.0A
V[DS] max: 20.0V
C[iss]: 270.0pF
C[iss]: 315.0pF
C[oss]: 110.0pF
C[oss]: 114.0pF
Package: PQFN 3.3 x 3.3
R[DS (on)](@4.5V) max: 55.0mΩ
更多
R[DS (on)](@4.5V) max: 150.0mΩ
I[D ](@25°C) max: 3.2A
I[D ](@25°C) max: 5.1A
Q[G](typ @4.5V) max: 3.0nC
Polarity: N+P
Budgetary Price €/1k: 0.39
BSG0812ND
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 25 V Power Block in 5x6 mm²
I[D ](@25°C) max: 18.0A
I[D ](@25°C) max: 37.0A
Operating Temperature max: 150.0°C
Package: Power Block 5x6
Polarity: N+N
Q[G](typ @4.5V): 5.6nC
Q[G](typ @4.5V): 20.0nC
R[DS (on)](@10V) max: 3.5mΩ
R[DS (on)](@10V) max: 0.9mΩ
R[DS (on)](@4.5V) max: 4.6mΩ
R[DS (on)](@4.5V) max: 1.3mΩ
V[DS] max: 25.0V
V[DS] max: 25.0V
V[GS(th)]: 1.6V
Budgetary Price €/1k: 0.63
I[D ](@25°C) max: 50.0A
I[D ](@25°C) max: 50.0A
I[Dpuls] max: 160.0A
P[tot] max: 2.5W
P[tot] max: 2.5W
Polarity: N+N
Q[G](typ @4.5V): 5.6nC
Q[G](typ @4.5V): 15.0nC
R[th]: 4.3K/W
R[th]: 2.2K/W
R[thJA] max: 50.0K/W
V[DS] max: 25.0V
V[DS] max: 25.0V
C[iss]: 2200.0pF
C[iss]: 780.0pF
C[oss]: 1300.0pF
C[oss]: 390.0pF
R[DS (on)](@10V) max: 1.2mΩ
R[DS (on)](@10V) max: 3.0mΩ
R[DS (on)](@4.5V) max: 1.7mΩ
更多
R[DS (on)](@4.5V) max: 4.0mΩ
R[DS (on)](@4.5V LL) max: 1.7mΩ
R[DS (on)](@4.5V LL) max: 4.0mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: Power Block 5x6
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.73
IRF7351
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Polarity: N+N
Q[gd](typ): 7.2nC
R[thJA] max: 62.5K/W
T[j] max: 150.0°C
V[DS] max: 60.0V
V[GS] max: 20.0V
Package: SO-8
P[tot](@ T[A]=25°C) max: 2.0W
R[DS (on)](@10V) max: 17.8mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 24.0nC
I[D ](@25°C) max: 8.0A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.43
I[D ](@25°C) max: 19.0A
I[D ](@25°C) max: 41.0A
I[Dpuls] max: 160.0A
P[tot] max: 2.5W
P[tot] max: 2.5W
Polarity: N+N
Q[G](typ @4.5V): 5.6nC
Q[G](typ @4.5V): 20.0nC
R[th]: 4.3K/W
R[th]: 1.8K/W
R[thJA] max: 50.0K/W
V[DS] max: 25.0V
V[DS] max: 25.0V
C[iss]: 2700.0pF
C[iss]: 780.0pF
C[oss]: 1400.0pF
C[oss]: 390.0pF
R[DS (on)](@10V) max: 0.8mΩ
R[DS (on)](@10V) max: 3.0mΩ
R[DS (on)](@4.5V) max: 1.1mΩ
更多
R[DS (on)](@4.5V) max: 4.0mΩ
R[DS (on)](@4.5V LL) max: 1.1mΩ
R[DS (on)](@4.5V LL) max: 4.0mΩ
Package: Power Block 5x6
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.74
IRF9389
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Dual N- and P-Channel StrongIRFET™ Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Polarity: N+P
P[tot](@ T[A]=25°C) max: 2.0W
Q[gd](typ): 0.98nC
R[thJA] max: 62.5K/W
V[DS] max: 30.0V
V[GS] max: 20.0V
Package: SO-8
Q[gd](typ): 2.1nC
T[j] max: 150.0°C
R[DS (on)](@10V) max: 27.0mΩ
R[DS (on)](@10V) max: 64.0mΩ
R[DS (on)](@4.5V) max: 40.0mΩ
R[DS (on)](@4.5V) max: 103.0mΩ
Q[G](typ @10V): 6.8nC
Q[G](typ @10V): 8.1nC
V[GS(th)]: -1.8V
V[GS(th)]: 1.8V
I[D ](@25°C) max: 6.8A
I[D ](@25°C) max: -4.6A
Budgetary Price €/1k: 0.14
I[D ](@25°C) max: 50.0A
I[D ](@25°C) max: 50.0A
I[Dpuls] max: 160.0A
Mounting: SMD
P[tot] max: 2.5W
P[tot] max: 2.5W
Pin Count: 8.0Pins
Polarity: N+N
Q[G](typ @4.5V): 5.6nC
Q[G](typ @4.5V): 16.0nC
R[th] max: 4.3K/W
R[th] max: 1.8K/W
R[thJA] max: 50.0K/W
R[thJC] max: 4.3K/W
R[thJC] max: 1.8K/W
V[DS] max: 25.0V
V[DS] max: 25.0V
C[iss]: 2300.0pF
C[iss]: 770.0pF
C[oss]: 1400.0pF
更多
C[oss]: 390.0pF
R[DS (on)](@10V) max: 0.9mΩ
R[DS (on)](@10V) max: 3.0mΩ
R[DS (on)](@4.5V) max: 1.2mΩ
R[DS (on)](@4.5V) max: 4.0mΩ
R[DS (on)](@4.5V LL) max: 1.2mΩ
R[DS (on)](@4.5V LL) max: 4.0mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: Power Block 5x6
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.87
IRF9358
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Polarity: P+P
P[tot](@ T[A]=25°C) max: 2.0W
Q[gd](typ): 8.9nC
T[j] max: 150.0°C
V[GS] max: 20.0V
Package: SO-8
R[thJA] max: 62.5K/W
V[DS] max: -30.0V
R[DS (on)](@10V) max: 16.3mΩ
R[DS (on)](@4.5V) max: 23.8mΩ
V[GS(th)]: -1.8V
I[D ](@25°C) max: -9.2A
Q[G](typ @4.5V): 19.0nC
Budgetary Price €/1k: 0.39
I[D ](@25°C) max: 42.0A
I[D ](@ T[C]=25°C) max: 42.0A
I[Dpuls] max: 168.0A
Mounting: SMT
P[tot] max: 50.0W
Polarity: N+N
Q[G](typ @10V): 21.0nC
R[DS (on)](@10V) max: 15.5mΩ
V[DS] max: 60.0V
Package: SuperSO8 5x6
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.38
IRFI4212H-117P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Dual N-Channel Digital Audio Power MOSFET in a TO-220 Full-Pak(Iso) package
P[tot](@ T[A]=25°C) max: 18.0W
Q[gd](typ): 6.2nC
T[j] max: 150.0°C
V[GS] max: 20.0V
Polarity: N+N
R[thJA] max: 65.0K/W
V[DS] max: 100.0V
Package: TO-220 FullPAK
R[DS (on)](@10V) max: 72.5mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 12.0nC
I[D ](@25°C) max: 11.0A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.69