I[D ](@25°C) max: 20.0A
I[D ](@ T[C]=25°C) max: 20.0A
I[Dpuls] max: 80.0A
Mounting: SMT
P[tot] max: 65.0W
Polarity: N+N
Q[G](typ @10V): 39.0nC
R[DS (on)](@10V) max: 7.2mΩ
R[DS (on)](@4.5V) max: 9.2mΩ
V[DS] max: 40.0V
Package: SuperSO8 5x6
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.51
I[D ](@25°C) max: 20.0A
I[D ](@ T[C]=25°C) max: 20.0A
I[Dpuls] max: 80.0A
Mounting: SMT
P[tot] max: 65.0W
Polarity: N+N
Q[G](typ @10V): 28.0nC
R[DS (on)](@10V) max: 7.6mΩ
V[DS] max: 40.0V
Package: SuperSO8 5x6
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.48
I[Dpuls] max: 65.0A
R[th]: 50.0K/W
P[tot] max: 2.0W
V[DS] max: 30.0V
Q[G](typ @4.5V): 6.1nC
I[D ](@25°C) max: 9.3A
Polarity: N+N
C[iss]: 970.0pF
C[oss]: 340.0pF
Q[G](typ @10V): 12.6nC
R[DS (on)](@10V) max: 15.0mΩ
R[DS (on)](@4.5V) max: 18.2mΩ
R[DS (on)](@4.5V LL) max: 18.2mΩ
Package: SO-8
V[GS(th)]: 1.57V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.32
I[D ](@25°C) max: 7.7A
I[Dpuls] max: 54.0A
R[th]: 50.0K/W
P[tot] max: 2.0W
V[DS] max: 30.0V
Q[G](typ @10V): 7.8nC
Polarity: N+N
C[iss]: 600.0pF
C[oss]: 230.0pF
Q[G](typ @4.5V): 3.8nC
R[DS (on)](@10V) max: 22.0mΩ
R[DS (on)](@4.5V) max: 27.0mΩ
R[DS (on)](@4.5V LL) max: 27.0mΩ
Package: SO-8
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.24
IRF7309
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Package: SO-8
Polarity: N+P
P[tot](@ T[A]=25°C) max: 1.4W
Q[gd](typ): 5.3nC
R[thJA] max: 90.0K/W
T[j] max: 150.0°C
V[DS] max: 30.0V
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Q[gd](typ): 6.0nC
R[DS (on)](@10V) max: 50.0mΩ
R[DS (on)](@10V) max: 100.0mΩ
R[DS (on)](@4.5V) max: 80.0mΩ
R[DS (on)](@4.5V) max: 160.0mΩ
V[GS(th)] min: -1.0V
V[GS(th)] min: 1.0V
I[D ](@25°C) max: 4.0A
I[D ](@25°C) max: -3.0A
Q[G](typ @4.5V): 16.7nC
Q[G](typ @4.5V): 16.7nC
更多
V[DS] max: -30.0V
Budgetary Price €/1k: 0.22
IRF7341G
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Dual N-Channel Power MOSFET in a SO-8 package
Package: SO-8
P[tot](@ T[A]=25°C) max: 2.4W
T[j] max: 175.0°C
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Polarity: N+N
Q[gd](typ): 7.3nC
R[thJA] max: 62.5K/W
V[DS] max: 55.0V
R[DS (on)](@10V) max: 50.0mΩ
R[DS (on)](@4.5V) max: 65.0mΩ
V[GS(th)] min: 1.0V
Q[G](typ @10V): 29.0nC
I[D ](@25°C) max: 5.1A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.64
IRF7105
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Package: SO-8
P[tot](@ T[A]=25°C) max: 2.0W
Q[gd](typ): 2.8nC
Q[gd](typ): 3.1nC
T[j] max: 150.0°C
V[GS] max: 20.0V
Polarity: N+P
R[thJA] max: 62.5K/W
V[DS] max: 25.0V
R[DS (on)](@10V) max: 100.0mΩ
R[DS (on)](@10V) max: 250.0mΩ
R[DS (on)](@4.5V) max: 160.0mΩ
R[DS (on)](@4.5V) max: 400.0mΩ
V[GS(th)] max: -3.0V
V[GS(th)] max: 3.0V
Q[G](typ @10V): 9.4nC
Q[G](typ @10V): 10.0nC
I[D ](@25°C) max: 3.5A
I[D ](@25°C) max: -2.3A
更多
V[DS] max: -25.0V
Budgetary Price €/1k: 0.15
IRF7319
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
R[thJA] max: 62.5K/W
T[j] max: 150.0°C
V[DS] max: 30.0V
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
P[tot](@ T[A]=25°C) max: 2.0W
Q[gd](typ): 6.4nC
Package: SO-8
Polarity: N+P
Q[gd](typ): 5.9nC
R[DS (on)](@10V) max: 29.0mΩ
R[DS (on)](@10V) max: 58.0mΩ
R[DS (on)](@4.5V) max: 46.0mΩ
R[DS (on)](@4.5V) max: 98.0mΩ
V[GS(th)] min: -1.0V
V[GS(th)] min: 1.0V
Q[G](typ @10V): 22.0nC
Q[G](typ @10V): 23.0nC
I[D ](@25°C) max: 6.5A
I[D ](@25°C) max: -4.9A
更多
V[DS] max: -30.0V
Budgetary Price €/1k: 0.28
I[Dpuls] max: -13.0A
I[Dpuls] max: 20.0A
Mode: Enhancement
Mounting: SMD
Operating Temperature max: 175.0°C
P[tot] max: 2.5W
Pin Count: 8.0Pins
R[thJC] max: 8.0K/W
R[thJA] max: 60.0K/W
V[DS] max: -20.0V
V[DS] max: 20.0V
V[GS(th)] max: -0.7V
V[GS(th)] max: 1.4V
C[iss]: 300.0pF
C[iss]: 315.0pF
C[oss]: 114.0pF
C[oss]: 92.0pF
Package: PQFN 3.3 x 3.3
R[DS (on)](@4.5V) max: 55.0mΩ
R[DS (on)](@4.5V) max: 150.0mΩ
更多
Special Features: LTI (Lead Tip Inspection)
I[D ](@25°C) max: 3.2A
I[D ](@25°C) max: 5.1A
Q[G](typ @4.5V) max: 3.0nC
Polarity: N+P
Budgetary Price €/1k: 0.46
IRF9362
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
P[tot](@ T[A]=25°C) max: 2.0W
R[thJA] max: 62.5K/W
V[DS] max: -30.0V
Package: SO-8
Polarity: P+P
Q[gd](typ): 6.3nC
T[j] max: 150.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 21.0mΩ
R[DS (on)](@4.5V) max: 32.0mΩ
V[GS(th)]: -1.8V
I[D ](@25°C) max: -8.0A
Q[G](typ @4.5V): 13.0nC
Budgetary Price €/1k: 0.25