IRF7319

制造商:

描述: 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

物料参数

R[thJA] max:62.5K/W
T[j] max:150.0°C
V[DS] max:30.0V
V[GS] max:20.0V
Moisture Sensitivity Level:1
P[tot](@ T[A]=25°C) max:2.0W
Q[gd](typ):6.4nC
Package:SO-8
Polarity:N+P
Q[gd](typ):5.9nC
R[DS (on)](@10V) max:29.0mΩ
R[DS (on)](@10V) max:58.0mΩ
R[DS (on)](@4.5V) max:46.0mΩ
R[DS (on)](@4.5V) max:98.0mΩ
V[GS(th)] min:-1.0V
V[GS(th)] min:1.0V
Q[G](typ @10V):22.0nC
Q[G](typ @10V):23.0nC
I[D ](@25°C) max:6.5A
I[D ](@25°C) max:-4.9A
V[DS] max:-30.0V
Budgetary Price €/1k:0.28