IRF7105
制造商:
描述: 25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
物料参数
| Moisture Sensitivity Level: | 1 |
| Package: | SO-8 |
| P[tot](@ T[A]=25°C) max: | 2.0W |
| Q[gd](typ): | 2.8nC |
| Q[gd](typ): | 3.1nC |
| T[j] max: | 150.0°C |
| V[GS] max: | 20.0V |
| Polarity: | N+P |
| R[thJA] max: | 62.5K/W |
| V[DS] max: | 25.0V |
| R[DS (on)](@10V) max: | 100.0mΩ |
| R[DS (on)](@10V) max: | 250.0mΩ |
| R[DS (on)](@4.5V) max: | 160.0mΩ |
| R[DS (on)](@4.5V) max: | 400.0mΩ |
| V[GS(th)] max: | -3.0V |
| V[GS(th)] max: | 3.0V |
| Q[G](typ @10V): | 9.4nC |
| Q[G](typ @10V): | 10.0nC |
| I[D ](@25°C) max: | 3.5A |
| I[D ](@25°C) max: | -2.3A |
| V[DS] max: | -25.0V |
| Budgetary Price €/1k: | 0.15 |