I[Dpuls] max: 596.0A R[th]: 1.8K/W P[tot] max: 69.0W V[DS] max: 30.0V Q[G](typ @4.5V): 22.0nC I[D ](@25°C) max: 149.0A Polarity: N C[iss]: 2800.0pF C[oss]: 960.0pF Q[G](typ @10V): 44.0nC R[DS (on)](@10V) max: 1.9mΩ R[DS (on)](@4.5V) max: 2.5mΩ R[DS (on)](@4.5V LL) max: 2.5mΩ Package: PQFN 3.3 x 3.3 V[GS(th)]: 1.52V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.45

I[Dpuls] max: 160.0A R[th]: 3.4K/W P[tot] max: 37.0W V[DS] max: 30.0V Q[G](typ @10V): 17.0nC Polarity: N C[iss]: 1100.0pF C[oss]: 460.0pF Q[G](typ @4.5V): 8.5nC R[DS (on)](@10V) max: 4.0mΩ R[DS (on)](@4.5V) max: 5.7mΩ R[DS (on)](@4.5V LL) max: 5.7mΩ Special Features: Monolithically Integrated Schottky-like Diode Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 40.0A V[GS(th)]: 1.85V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.21

Moisture Sensitivity Level: 1 P[tot] max: 230.0W Mounting: SMD Package: D2PAK (TO-263) Polarity: N R[thJC] max: 0.65K/W T[j] max: 175.0°C V[DS] max: 40.0V Q[gd]: 51.0nC V[GS] max: 20.0V R[DS (on)](@10V) max: 1.8mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 150.0nC I[D ](@25°C) max: 195.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.69

I[Dpuls] max: 160.0A Mounting: SMD Polarity: N Pin Count: 8.0Pins Q[G](typ @4.5V): 5.2nC R[th]: 4.6K/W R[thJA] max: 60.0K/W R[thJC] max: 4.6K/W V[DS] max: 30.0V C[iss]: 700.0pF C[oss]: 220.0pF Q[G](typ @10V): 11.0nC R[DS (on)](@10V) max: 4.4mΩ R[DS (on)](@4.5V) max: 5.3mΩ R[DS (on)](@4.5V LL) max: 5.3mΩ Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 40.0A V[GS(th)]: 1.6V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.23

I[Dpuls] max: 400.0A Mounting: SMD P[tot] max: 43.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @4.5V): 9.0nC R[th]: 2.9K/W R[thJA] max: 60.0K/W R[thJC] max: 2.9K/W V[DS] max: 30.0V C[iss]: 1200.0pF C[oss]: 420.0pF Q[G](typ @10V): 19.0nC R[DS (on)](@10V) max: 2.8mΩ R[DS (on)](@4.5V) max: 3.3mΩ R[DS (on)](@4.5V LL) max: 3.3mΩ Special Features: Monolithically Integrated Schottky-like Diode Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 100.0A V[GS(th)]: 1.82V 更多

I[D ](@25°C) max: 143.0A I[Dpuls] max: 572.0A Mounting: SMD Operating Temperature max: 175.0°C P[tot] max: 150.0W Package: DPAK (TO-252) Pin Count: 3.0Pins Polarity: N Q[G](typ @10V): 68.0nC R[DS (on)](@10V) max: 2.3mΩ V[DS] max: 40.0V V[GS(th)]: 2.8V Budgetary Price €/1k: 0.44

I[D ](@25°C) max: 64.0A I[Dpuls] max: 254.0A Operating Temperature max: 150.0°C Polarity: N Q[G](typ @10V): 9.7nC Q[G](typ @4.5V): 4.7nC R[DS (on)](@10V) max: 5.75mΩ R[DS (on)](@4.5V) max: 8.3mΩ V[DS] max: 40.0V V[GS(th)]: 1.8V Package: PQFN 2 x 2 (DFN2020) Budgetary Price €/1k: 0.22

I[Dpuls] max: 492.0A Mounting: SMD Pin Count: 8.0Pins Polarity: N Q[G](typ @4.5V): 11.4nC R[th]: 2.5K/W R[thJA] max: 60.0K/W R[thJC] max: 2.5K/W V[DS] max: 30.0V C[iss]: 1500.0pF C[oss]: 540.0pF Q[G](typ @10V): 24.0nC R[DS (on)](@10V) max: 2.0mΩ R[DS (on)](@4.5V) max: 2.5mΩ R[DS (on)](@4.5V LL) max: 2.5mΩ Special Features: Monolithically Integrated Schottky-like Diode Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 123.0A V[GS(th)]: 1.8V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.4

Mounting: SMD P[tot](@ T[A]=25°C) max: 2.7W R[thJC] max: 3.4K/W V[DS] max: 20.0V Moisture Sensitivity Level: 1 Polarity: N P[tot] max: 37.0W Q[gd]: 25.0nC T[j] max: 150.0°C V[GS] max: 12.0V Package: PQFN 3.3 x 3.3 R[DS (on)](@10V) max: 2.2mΩ R[DS (on)](@4.5V) max: 2.5mΩ V[GS(th)]: 0.8V I[D ](@25°C) max: 40.0A Q[G](typ @4.5V): 52.0nC Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.3

I[D ](@25°C) max: 129.0A Operating Temperature max: 150.0°C Package: PQFN 2 x 2 (DFN2020) Polarity: N Q[G](typ @4.5V): 7.5nC R[DS (on)](@4.5V) max: 2.15mΩ V[DS] max: 15.0V V[GS(th)]: 1.6V Budgetary Price €/1k: 0.37 Special Features: Switching optimized