物料参数
| I[Dpuls] max: | 160.0A |
| R[th]: | 3.4K/W |
| P[tot] max: | 37.0W |
| V[DS] max: | 30.0V |
| Q[G](typ @10V): | 17.0nC |
| Polarity: | N |
| C[iss]: | 1100.0pF |
| C[oss]: | 460.0pF |
| Q[G](typ @4.5V): | 8.5nC |
| R[DS (on)](@10V) max: | 4.0mΩ |
| R[DS (on)](@4.5V) max: | 5.7mΩ |
| R[DS (on)](@4.5V LL) max: | 5.7mΩ |
| Special Features: | Monolithically Integrated Schottky-like Diode |
| Package: | PQFN 3.3 x 3.3 |
| I[D ](@25°C) max: | 40.0A |
| V[GS(th)]: | 1.85V |
| Operating Temperature max: | 150.0°C |
| Budgetary Price €/1k: | 0.21 |