IRF7853


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 Package

Moisture Sensitivity Level: 1 Mounting: SMD Polarity: N P[tot](@ T[A]=25°C) max: 2.5W R[thJA] max: 50.0K/W V[DS] max: 100.0V V[GS] max: 20.0V Package: SO-8 Q[gd]: 10.0nC T[j] max: 150.0°C R[DS (on)](@10V) max: 18.0mΩ V[GS(th)]: 3.95V Q[G](typ @10V): 28.0nC I[D ](@25°C) max: 8.3A Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.45

ISC027N10NM6


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package

I[D ](@25°C) max: 192.0A I[D ] max: 192.0A I[Dpuls] max: 768.0A Mounting: SMT P[tot] max: 217.0W Pin Count: 8.0Pins Polarity: N Q[G]: 58.0nC Q[G](typ @10V): 58.0nC R[DS (on)] max: 2.7mΩ R[DS (on)](@10V) max: 2.7mΩ V[DS] max: 100.0V V[GS(th)]: 2.8V Package: SuperSO8 5x6 Operating Temperature max: 175.0°C Special Features: Fused leads Budgetary Price €/1k: 1.49

BSC146N10LS5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFETs in logic level provide low RDS(on) in a small package

I[D ](@25°C) max: 44.0A I[D ](@ T[C]=25°C) max: 44.0A I[Dpuls] max: 176.0A P[tot] max: 52.0W Polarity: N Q[G](typ @4.5V): 8.0nC R[DS (on)](@10V) max: 14.6mΩ R[DS (on)](@4.5V) max: 20.8mΩ V[DS] max: 100.0V V[GS(th)]: 1.7V Package: SuperSO8 5x6 Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.43

ISC022N10NM6


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package

I[D ](@25°C) max: 230.0A I[D ] max: 230.0A I[Dpuls] max: 920.0A Mounting: SMT P[tot] max: 254.0W Package: SuperSO8 5x6 Pin Count: 8.0Pins Polarity: N Q[G]: 73.0nC Q[G](typ @10V): 73.0nC R[DS (on)] max: 2.24mΩ R[DS (on)](@10V) max: 2.24mΩ V[DS] max: 100.0V V[GS(th)]: 2.8V Operating Temperature max: 175.0°C Battery voltage: 48-72 V Special Features: Fused leads Budgetary Price €/1k: 1.74
I[Dpuls] max: 100.0A R[th]: 1.0K/W P[tot] max: 125.0W V[DS] max: 250.0V Q[G](typ @10V): 22.0nC Polarity: N C[iss]: 1770.0pF C[oss]: 112.0pF R[DS (on)](@10V) max: 60.0mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 25.0A V[GS(th)]: 3.0V Operating Temperature max: 150.0°C Budgetary Price €/1k: 1.4
I[Dpuls] max: 144.0A R[th]: 1.0K/W P[tot] max: 125.0W V[DS] max: 200.0V Q[G](typ @10V): 22.0nC Polarity: N C[iss]: 1770.0pF C[oss]: 135.0pF R[DS (on)](@10V) max: 32.0mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 36.0A V[GS(th)]: 3.0V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.97
I[Dpuls] max: 480.0A Mounting: THT P[tot] max: 300.0W Package: I2PAK (TO-262) Pin Count: 3.0Pins Polarity: N Q[G](typ @10V): 80.0nC Q[gd]: 16.0nC R[th]: 0.5K/W R[thJA] max: 62.0K/W R[thJC] max: 0.5K/W T[j] max: 175.0°C V[DS] max: 150.0V C[iss]: 6000.0pF C[oss]: 1500.0pF R[DS (on)](@10V) max: 5.1mΩ I[D ](@25°C) max: 120.0A V[GS(th)]: 3.8V Operating Temperature max: 175.0°C Budgetary Price €/1k: 2.69

BSC088N15LS5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFET 150 V logic level in SuperSO8

I[D ](@25°C) max: 87.0A Operating Temperature max: 150.0°C Package: SuperSO8 5x6 Polarity: N Q[G](typ @10V): 40.0nC Q[G](typ @4.5V): 21.0nC R[DS (on)](@10V) max: 8.8mΩ R[DS (on)](@4.5V) max: 12.0mΩ V[DS] max: 150.0V V[GS(th)]: 1.8V Budgetary Price €/1k: 1.06

ISC030N10NM6


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package

I[D ](@25°C) max: 179.0A I[D ] max: 179.0A I[Dpuls] max: 716.0A Mounting: SMT P[tot] max: 208.0W Package: SuperSO8 5x6 Pin Count: 8.0Pins Polarity: N Q[G]: 55.0nC Q[G](typ @10V): 55.0nC R[DS (on)](@10V) max: 3.0mΩ R[DS (on)] max: 3.0mΩ V[DS] max: 100.0V V[GS(th)]: 2.8V Operating Temperature max: 175.0°C Special Features: Fused leads Budgetary Price €/1k: 1.29

BSC034N10LS5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFETs in logic level provide low RDS(on) in a small package

I[D ](@25°C) max: 156.0A I[D ](@ T[C]=25°C) max: 156.0A I[Dpuls] max: 624.0A P[tot] max: 156.0W Polarity: N Q[G](typ @4.5V): 37.0nC R[DS (on)](@10V) max: 3.4mΩ R[DS (on)](@4.5V) max: 4.6mΩ V[DS] max: 100.0V V[GS(th)]: 1.7V Package: SuperSO8 5x6 Operating Temperature max: 150.0°C Budgetary Price €/1k: 1.11