IPA030N10NF2S


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: StrongIRFET™ 2 single n-channel power MOSFET 100V in TO-220 FullPAK package

I[D ](@25°C) max: 83.0A Polarity: N Q[G](typ @10V): 103.0nC R[DS (on)](@10V) max: 3.0mΩ V[DS] max: 100.0V V[GS(th)]: 3.0V Package: TO-220 FullPAK Operating Temperature max: 175.0°C Budgetary Price €/1k: 1.43

IRFB4227


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 200V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package

Package: TO-220 Polarity: N P[tot] max: 190.0W Q[gd]: 23.0nC R[thJC] max: 0.45K/W V[DS] max: 200.0V V[GS] max: 30.0V Mounting: THT T[j] max: 175.0°C R[DS (on)](@10V) max: 24.0mΩ V[GS(th)]: 4.0V Q[G](typ @10V): 70.0nC I[D ](@25°C) max: 65.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.71

IPT022N10NF2S


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: StrongIRFET™ 2 single N-channel power MOSFET 100 V in TOLL package

I[D ](@25°C) max: 236.0A I[Dpuls] max: 944.0A Operating Temperature max: 175.0°C P[tot] max: 250.0W Package: TOLL (HSOF-8) Polarity: N Q[G](typ @10V): 103.0nC R[DS (on)](@10V) max: 2.25mΩ V[DS] max: 100.0V V[GS(th)]: 3.0V Battery voltage: 48-72 V Budgetary Price €/1k: 1.05

IPT015N10NF2S


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: StrongIRFET™ 2 single N-channel power MOSFET 100 V in TOLL package

I[D ](@25°C) max: 315.0A I[Dpuls] max: 1260.0A Operating Temperature max: 175.0°C P[tot] max: 300.0W Package: TOLL (HSOF-8) Polarity: N Q[G](typ @10V): 161.0nC R[DS (on)](@10V) max: 1.5mΩ V[DS] max: 100.0V V[GS(th)]: 3.0V Battery voltage: 48-72 V Budgetary Price €/1k: 1.51

IPT020N10N5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 100V power MOSFET in TO-Leadless (TOLL) package with 60% space reduction for telecom and low voltage drives applications

I[D ](@25°C) max: 260.0A I[D ](@ T[C]=25°C) max: 260.0A I[Dpuls] max: 1039.0A P[tot] max: 273.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @10V): 122.0nC R[DS (on)](@10V) max: 2.0mΩ V[DS] max: 100.0V V[GS(th)]: 3.0V Package: TOLL (HSOF-8) Operating Temperature max: 175.0°C Budgetary Price €/1k: 1.54

IPT067N20NM6


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 power MOSFET 200 V normal level in TO-Leadless package

I[D ](@25°C) max: 137.0A Operating Temperature max: 175.0°C Package: TOLL (HSOF-8) Polarity: N Q[G](typ @10V): 71.0nC R[DS (on)](@10V) max: 6.7mΩ V[DS] max: 200.0V V[GS(th)]: 3.7V Budgetary Price €/1k: 3.34

IPT017N12NM6


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 power MOSFET normal level 120 V in TOLL package

I[D ](@25°C) max: 331.0A I[Dpuls] max: 1324.0A Operating Temperature max: 175.0°C P[tot] max: 395.0W Package: TOLL (HSOF-8) Polarity: N Q[G](typ @10V): 113.0nC R[DS (on)](@10V) max: 1.7mΩ V[DS] max: 120.0V V[GS(th)]: 3.1V Battery voltage: 48-72 V Budgetary Price €/1k: 2.25

IPT054N15N5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFET 150 V 5.4 mOhm in TOLL

I[D ](@25°C) max: 143.0A I[D ] max: 143.0A I[Dpuls] max: 572.0A Mounting: SMT P[tot] max: 250.0W Package: TOLL (HSOF-8) Pin Count: 8.0Pins Polarity: N Q[G](typ @10V): 55.0nC Q[G]: 55.0nC R[DS (on)](@10V) max: 5.4mΩ R[DS (on)] max: 5.4mΩ V[DS] max: 150.0V V[GS(th)]: 3.8V Operating Temperature max: 175.0°C Battery voltage: 72-96 V Budgetary Price €/1k: 1.76

IPT020N13NM6


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 power MOSFET 135 V Normal Level in TOLL

I[D ](@25°C) max: 297.0A Operating Temperature max: 175.0°C Package: TOLL (HSOF-8) Polarity: N Q[G](typ @10V): 159.0nC R[DS (on)](@10V) max: 2.0mΩ V[DS] max: 135.0V V[GS(th)]: 3.0V Budgetary Price €/1k: 2.17
I[Dpuls] max: 1200.0A P[tot] max: 375.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @10V): 169.0nC R[th]: 0.4K/W R[thJA] max: 62.0K/W V[DS] max: 100.0V C[iss]: 12000.0pF C[oss]: 1800.0pF R[DS (on)](@10V) max: 1.5mΩ Package: TOLL (HSOF-8) I[D ](@25°C) max: 300.0A V[GS(th)]: 3.0V Operating Temperature max: 175.0°C Battery voltage: 48-72 V Budgetary Price €/1k: 1.96