I[Dpuls] max: 84.0A
R[th]: 2.2K/W
P[tot] max: 57.0W
V[DS] max: 150.0V
Q[G](typ @10V): 8.7nC
Polarity: N
C[iss]: 670.0pF
C[oss]: 80.0pF
R[DS (on)](@10V) max: 52.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 21.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.45
I[Dpuls] max: 236.0A
R[th]: 1.6K/W
P[tot] max: 94.0W
V[DS] max: 100.0V
Q[G](typ @10V): 26.0nC
Package: DPAK (TO-252)
Polarity: N
C[iss]: 1880.0pF
C[oss]: 330.0pF
R[DS (on)](@10V) max: 12.2mΩ
I[D ](@25°C) max: 59.0A
V[GS(th)]: 2.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.5
I[Dpuls] max: 160.0A
R[th]: 2.1K/W
P[tot] max: 63.0W
V[DS] max: 100.0V
Q[G](typ @10V): 19.0nC
Polarity: N
C[iss]: 1300.0pF
C[oss]: 240.0pF
R[DS (on)](@10V) max: 16.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 40.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.47
I[Dpuls] max: 20.0A
R[th]: 3.7K/W
P[tot] max: 33.8W
V[DS] max: 250.0V
Q[G](typ @10V): 4.2nC
Polarity: N
C[iss]: 320.0pF
C[oss]: 21.0pF
R[DS (on)](@10V) max: 425.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 5.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.42
I[Dpuls] max: 160.0A
R[th]: 2.0K/W
R[thJC] max: 2.0K/W
R[thJA] max: 62.0K/W
Pin Count: 8.0Pins
P[tot] max: 63.0W
V[DS] max: 100.0V
Q[G](typ @10V): 26.0nC
Polarity: N
C[iss]: 1900.0pF
C[oss]: 280.0pF
R[DS (on)](@10V) max: 15.0mΩ
R[DS (on)](@4.5V) max: 20.0mΩ
R[DS (on)](@4.5V LL) max: 20.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 40.0A
V[GS(th)]: 1.7V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.5
IQE065N10NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance.
I[D ](@25°C) max: 85.0A
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @10V): 34.0nC
R[DS (on)](@10V) max: 6.5mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.96
IQE065N10NM5CG
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance.
I[D ](@25°C) max: 85.0A
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @10V): 34.0nC
R[DS (on)](@10V) max: 6.5mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Special Features: Center-Gate
Budgetary Price €/1k: 0.92
Moisture Sensitivity Level: 1
Package: SO-8
Polarity: N
P[tot](@ T[A]=25°C) max: 2.5W
Q[gd]: 10.0nC
R[thJA] max: 50.0K/W
T[j] max: 150.0°C
V[DS] max: 100.0V
V[GS] max: 20.0V
Mounting: SMD
R[DS (on)](@10V) max: 39.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 37.0nC
I[D ](@25°C) max: 5.4A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.28
IRF7495
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Package: SO-8
Polarity: N
P[tot](@ T[A]=25°C) max: 2.5W
Q[gd]: 11.7nC
R[thJA] max: 50.0K/W
T[j] max: 150.0°C
V[DS] max: 100.0V
V[GS] max: 20.0V
Mounting: SMD
R[DS (on)](@10V) max: 22.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 34.0nC
I[D ](@25°C) max: 7.3A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.46
IRFR3710Z
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Moisture Sensitivity Level: 1
Package: DPAK (TO-252)
Polarity: N
Q[gd]: 25.0nC
R[thJC] max: 1.05K/W
T[j] max: 175.0°C
V[GS] max: 20.0V
V[DS] max: 100.0V
Mounting: SMD
P[tot] max: 140.0W
R[DS (on)](@10V) max: 18.0mΩ
R[DS (on)](@10V) max: 18.0mΩ
V[GS(th)]: 3.0V
V[GS(th)]: 3.0V
Q[G](typ @10V): 69.0nC
Q[G](typ @10V): 69.0nC
I[D ](@25°C) max: 56.0A
I[D ](@25°C) max: 56.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.55