BSZ097N10NS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 100 V in a PQFN 3x3 package
R[th]: 1.8K/W
V[DS] max: 100.0V
P[tot] max: 69.0W
I[Dpuls] max: 248.0A
Q[G](typ @10V): 22.0nC
R[thJC] max: 1.8K/W
R[thJA] max: 62.0K/W
Pin Count: 8.0Pins
Polarity: N
Mounting: SMD
C[iss]: 1600.0pF
C[oss]: 250.0pF
R[DS (on)](@10V) max: 9.7mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 62.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.53
Package: SO-8
T[j] max: 150.0°C
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot](@ T[A]=25°C) max: 2.5W
Q[gd]: 5.0nC
R[thJA] max: 50.0K/W
V[DS] max: 150.0V
V[GS] max: 30.0V
R[DS (on)](@10V) max: 280.0mΩ
V[GS(th)]: 4.25V
Q[G](typ @10V): 10.0nC
I[D ](@25°C) max: 1.9A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.22
Moisture Sensitivity Level: 1
Polarity: N
R[thJA] max: 50.0K/W
V[DS] max: 150.0V
Mounting: SMD
Package: SO-8
P[tot](@ T[A]=25°C) max: 2.5W
Q[gd]: 13.0nC
T[j] max: 150.0°C
V[GS] max: 30.0V
R[DS (on)](@10V) max: 90.0mΩ
V[GS(th)]: 4.25V
Q[G](typ @10V): 28.0nC
I[D ](@25°C) max: 3.6A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.37
IRF7820
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Polarity: N
Q[gd]: 8.7nC
V[DS] max: 200.0V
Mounting: SMD
Package: SO-8
P[tot](@ T[A]=25°C) max: 2.5W
R[thJA] max: 50.0K/W
T[j] max: 150.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 78.0mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 29.0nC
I[D ](@25°C) max: 3.7A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.5
IRFH5015
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 150V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package
Mounting: SMD
Polarity: N
P[tot] max: 250.0W
R[thJC] max: 0.5K/W
T[j] max: 150.0°C
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
P[tot](@ T[A]=25°C) max: 3.6W
Q[gd]: 12.0nC
V[DS] max: 150.0V
R[DS (on)](@10V) max: 31.0mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 36.0nC
I[D ](@25°C) max: 10.0A
Package: SuperSO8 5x6
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.52
I[Dpuls] max: 200.0A
R[th]: 1.0K/W
P[tot] max: 125.0W
V[DS] max: 150.0V
Q[G](typ @10V): 23.0nC
Polarity: N
C[iss]: 1820.0pF
C[oss]: 214.0pF
R[DS (on)](@10V) max: 19.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 50.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.79
I[Dpuls] max: 52.0A
R[th]: 3.3K/W
P[tot] max: 38.0W
V[DS] max: 150.0V
Q[G](typ @10V): 5.0nC
Polarity: N
C[iss]: 380.0pF
C[oss]: 46.0pF
R[DS (on)](@10V) max: 90.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 13.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.33
IRFH5210
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package
Moisture Sensitivity Level: 1
Mounting: SMD
P[tot](@ T[A]=25°C) max: 3.6W
Q[gd]: 13.0nC
R[thJC] max: 1.2K/W
T[j] max: 150.0°C
V[DS] max: 100.0V
V[GS] max: 20.0V
Polarity: N
P[tot] max: 104.0W
R[DS (on)](@10V) max: 14.9mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 40.0nC
I[D ](@25°C) max: 55.0A
Package: SuperSO8 5x6
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.45
IQE065N10NM5SC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance
I[D ](@25°C) max: 85.0A
I[D ] max: 85.0A
I[Dpuls] max: 340.0A
Operating Temperature max: 175.0°C
P[tot] max: 100.0W
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @10V): 34.0nC
Q[G]: 34.0nC
R[DS (on)](@10V) max: 6.5mΩ
R[DS (on)] max: 6.5mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
Special Features: Dual-Side Cooling
Budgetary Price €/1k: 1.05
IRF7815
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 150V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Mounting: SMD
Package: SO-8
P[tot](@ T[A]=25°C) max: 2.5W
R[thJA] max: 50.0K/W
T[j] max: 150.0°C
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Polarity: N
Q[gd]: 7.4nC
V[DS] max: 150.0V
R[DS (on)](@10V) max: 43.0mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 25.0nC
I[D ](@25°C) max: 5.1A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.44