BSC096N10LS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET in logic level provides low RDS(on) in a small package
I[D ](@25°C) max: 40.0A
I[D ](@ T[C]=25°C) max: 40.0A
I[Dpuls] max: 160.0A
Mounting: SMT
P[tot] max: 83.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 12.0nC
R[DS (on)](@10V) max: 9.6mΩ
R[DS (on)](@4.5V) max: 12.5mΩ
V[DS] max: 100.0V
V[GS(th)]: 1.7V
Package: SuperSO8 5x6
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.61
IQE065N10NM5CGSC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance
I[D ](@25°C) max: 85.0A
I[D ] max: 85.0A
I[Dpuls] max: 340.0A
Operating Temperature max: 175.0°C
P[tot] max: 100.0W
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @10V): 34.0nC
Q[G]: 34.0nC
R[DS (on)](@10V) max: 6.5mΩ
R[DS (on)] max: 6.5mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
Special Features: Center-Gate Dual-Side Cooling
Budgetary Price €/1k: 1.05
I[Dpuls] max: 132.0A
R[th]: 1.7K/W
P[tot] max: 74.0W
V[DS] max: 150.0V
Q[G](typ @10V): 12.0nC
Polarity: N
C[iss]: 893.0pF
C[oss]: 106.0pF
R[DS (on)](@10V) max: 36.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 33.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.53
I[Dpuls] max: 360.0A
R[th]: 0.8K/W
P[tot] max: 156.0W
V[DS] max: 100.0V
Q[G](typ @10V): 33.0nC
Polarity: N
C[iss]: 2200.0pF
C[oss]: 730.0pF
R[DS (on)](@10V) max: 10.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 90.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.72
BSC035N10NS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 100 V in a SuperSO8 5x6 package
I[Dpuls] max: 400.0A
Mounting: SMD
P[tot] max: 156.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 70.0nC
R[th]: 0.8K/W
R[thJA] max: 50.0K/W
R[thJC] max: 0.8K/W
V[DS] max: 100.0V
C[iss]: 5000.0pF
C[oss]: 770.0pF
R[DS (on)](@10V) max: 3.5mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 100.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 1.03
IRFL4310
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel IR MOSFET in a SOT-223 package
Moisture Sensitivity Level: 1
Package: SOT-223
Polarity: N
Q[gd]: 7.8nC
T[j] max: 150.0°C
V[DS] max: 100.0V
Mounting: SMD
P[tot](@ T[A]=25°C) max: 2.1W
R[thJA] max: 60.0K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 200.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 17.0nC
I[D ](@25°C) max: 1.6A
Special Features: Small Power
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.18
I[Dpuls] max: 84.0A
R[th]: 2.2K/W
P[tot] max: 57.0W
V[DS] max: 150.0V
Q[G](typ @10V): 8.7nC
Polarity: N
C[iss]: 670.0pF
C[oss]: 80.0pF
R[DS (on)](@10V) max: 52.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 21.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.37
I[Dpuls] max: 168.0A
R[th]: 2.1K/W
P[tot] max: 60.0W
V[DS] max: 100.0V
Q[G](typ @10V): 19.0nC
Polarity: N
C[iss]: 1300.0pF
C[oss]: 240.0pF
R[DS (on)](@10V) max: 16.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 42.0A
V[GS(th)]: 2.7V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.41
I[Dpuls] max: 45.0A
R[th]: 2.5K/W
P[tot] max: 50.0W
V[DS] max: 200.0V
Q[G](typ @10V): 6.5nC
Polarity: N
C[iss]: 510.0pF
C[oss]: 39.0pF
R[DS (on)](@10V) max: 125.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 11.3A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.44
IRFB4019
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Polarity: N
Q[gd]: 4.1nC
V[DS] max: 150.0V
V[GS] max: 20.0V
Mounting: THT
Package: TO-220
R[thJC] max: 1.88K/W
P[tot] max: 80.0W
T[j] max: 175.0°C
R[DS (on)](@10V) max: 95.0mΩ
V[GS(th)]: 3.95V
Q[G](typ @10V): 13.0nC
I[D ](@25°C) max: 17.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.43