I[Dpuls] max: 136.0A
R[th]: 1.1K/W
P[tot] max: 136.0W
V[DS] max: 200.0V
Q[G](typ @10V): 22.0nC
Package: TO-220
Polarity: N
C[iss]: 1770.0pF
C[oss]: 135.0pF
R[DS (on)](@10V) max: 32.0mΩ
I[D ](@25°C) max: 34.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.05
IRF530N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel MOSFET in a TO-220 package
V[DS] max: 100.0V
Polarity: N
R[thJC] max: 1.9K/W
V[GS] max: 20.0V
Mounting: THT
Package: TO-220
P[tot] max: 79.0W
Q[gd]: 4.8nC
T[j] max: 175.0°C
R[DS (on)](@10V) max: 90.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 24.7nC
I[D ](@25°C) max: 17.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.26
I[Dpuls] max: 160.0A
R[th]: 1.6K/W
P[tot] max: 78.0W
V[DS] max: 100.0V
Q[G](typ @10V): 13.0nC
Polarity: N
C[iss]: 860.0pF
C[oss]: 280.0pF
R[DS (on)](@10V) max: 25.2mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 40.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.4
I[Dpuls] max: 360.0A
R[th]: 1.1K/W
P[tot] max: 114.0W
V[DS] max: 100.0V
Q[G](typ @10V): 42.0nC
Polarity: N
C[iss]: 3000.0pF
C[oss]: 520.0pF
R[DS (on)](@10V) max: 7.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 90.0A
V[GS(th)]: 2.7V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.54
I[Dpuls] max: 172.0A
R[th]: 2.1K/W
P[tot] max: 71.0W
V[DS] max: 100.0V
Q[G](typ @10V): 19.0nC
Package: TO-220
Polarity: N
C[iss]: 1350.0pF
C[oss]: 237.0pF
R[DS (on)](@10V) max: 18.0mΩ
I[D ](@25°C) max: 43.0A
V[GS(th)]: 2.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.44
I[Dpuls] max: 332.0A
R[th]: 0.7K/W
P[tot] max: 214.0W
V[DS] max: 150.0V
Q[G](typ @10V): 41.0nC
Package: TO-220
Polarity: N
C[iss]: 3230.0pF
C[oss]: 378.0pF
R[DS (on)](@10V) max: 11.1mΩ
I[D ](@25°C) max: 83.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.51
IRFB4310Z
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Mounting: THT
Package: TO-220
P[tot] max: 250.0W
Q[gd]: 35.0nC
T[j] max: 175.0°C
V[GS] max: 20.0V
Polarity: N
R[thJC] max: 0.6K/W
V[DS] max: 100.0V
R[DS (on)](@10V) max: 6.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 120.0nC
I[D ](@25°C) max: 127.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.09
I[Dpuls] max: 61.0A
R[th]: 2.0K/W
P[tot] max: 62.5W
V[DS] max: 200.0V
Q[G](typ @10V): 9.0nC
Polarity: N
C[iss]: 690.0pF
C[oss]: 52.0pF
R[DS (on)](@10V) max: 90.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 15.2A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.57
IRF640N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel MOSFET in a TO-220 package
Package: TO-220
T[j] max: 175.0°C
Mounting: THT
Polarity: N
P[tot] max: 150.0W
Q[gd]: 22.0nC
R[thJC] max: 1.0K/W
V[DS] max: 200.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 150.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 44.7nC
I[D ](@25°C) max: 18.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.37
IRF100B201
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Mounting: THT
P[tot] max: 441.0W
V[DS] max: 100.0V
R[thJC] max: 0.34K/W
Package: TO-220
Polarity: N
Q[gd]: 45.0nC
T[j] max: 175.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 4.2mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 170.0nC
I[D ](@25°C) max: 192.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.82