ATP113-TL-H
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P 沟道，功率 MOSFET，-60V，-35A，29.5mΩ
状态: 生命周期终止
Compliance: Pb A H P
Channel Polarity: P-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): -60
RDS(on) Max @ VGS = 10 V (mΩ): 29.5
Vgs (V): 20
Vgs(th) Max (V): -2.6
ID Max (A): -35
PD Max (W): 50
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 38
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 55
更多
Ciss Typ (pF): 2400
Qgd Typ @ VGS = 4.5 V (nC): 12
Qrr Typ (nC): -
Coss Typ (pF): 250
Crss Typ (pF): 195
Package Type: DPAK (Single Gauge) / ATPAK
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $0.7293
FDB0300N1007L
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，100V，200A，3mΩ
状态: Lifetime 相似产品推荐
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 100
RDS(on) Max @ VGS = 10 V (mΩ): 3
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 200
PD Max (W): 250
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 44
更多
Ciss Typ (pF): 5925
Qgd Typ @ VGS = 4.5 V (nC): 16
Qrr Typ (nC): 128
Coss Typ (pF): 1220
Crss Typ (pF): 42
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: N
Reference Price: $2.6422
FDB031N08
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 PowerTrench® MOSFET 75V，235A，3.1mΩ
状态: Lifetime 相似产品推荐
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 75
RDS(on) Max @ VGS = 10 V (mΩ): 3.1
Vgs (V): ±20
Vgs(th) Max (V): 4.5
ID Max (A): 235
PD Max (W): 375
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 169
更多
Ciss Typ (pF): 11400
Qgd Typ @ VGS = 4.5 V (nC): 47
Qrr Typ (nC): 77
Coss Typ (pF): 1360
Crss Typ (pF): 595
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: N
Reference Price: Price N/A
FDB045AN08A0
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 PowerTrench® MOSFET 75V，80 A，4.5 mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 75
RDS(on) Max @ VGS = 10 V (mΩ): 4.5
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 80
PD Max (W): 310
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 92
更多
Ciss Typ (pF): 6600
Qgd Typ @ VGS = 4.5 V (nC): 21
Qrr Typ (nC): 54
Coss Typ (pF): 1000
Crss Typ (pF): 240
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $1.954
FDB047N10
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 PowerTrench® MOSFET 100V，164A，4.7mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 100
RDS(on) Max @ VGS = 10 V (mΩ): 4.7
Vgs (V): ±20
Vgs(th) Max (V): 4.5
ID Max (A): 164
PD Max (W): 375
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 160
更多
Ciss Typ (pF): 11500
Qgd Typ @ VGS = 4.5 V (nC): 36
Qrr Typ (nC): 245
Coss Typ (pF): 1120
Crss Typ (pF): 455
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $1.9737
FDB050AN06A0
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 Power Trench® MOSFET 60V，80A，5mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 5
Vgs (V): 20
Vgs(th) Max (V): 4
ID Max (A): 80
PD Max (W): 245
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 61
更多
Ciss Typ (pF): 3900
Qgd Typ @ VGS = 4.5 V (nC): 15
Qrr Typ (nC): 25
Coss Typ (pF): 750
Crss Typ (pF): 270
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $1.1856
FDB060AN08A0
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，75V，80A，6mΩ
状态: Active
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 80
RDS(on) Max @ VGS = 10 V (mΩ): 6
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 80
PD Max (W): 255
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 73
更多
Ciss Typ (pF): 5150
Qgd Typ @ VGS = 4.5 V (nC): 16
Qrr Typ (nC): 38
Coss Typ (pF): 800
Crss Typ (pF): 230
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Y
Reference Price: $1.8142
FDB0630N1507L
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，150V，130A，6.4mΩ
状态: Active
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 150
RDS(on) Max @ VGS = 10 V (mΩ): 6.4
Vgs (V): 20
Vgs(th) Max (V): 4
ID Max (A): 130
PD Max (W): 300
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 97
更多
Ciss Typ (pF): 7065
Qgd Typ @ VGS = 4.5 V (nC): 17
Qrr Typ (nC): 229
Coss Typ (pF): 552
Crss Typ (pF): 27
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: Y
Reference Price: $3.1165
FDB0690N1507L
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，150V，115A，6.9mΩ
状态: Active
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 150
RDS(on) Max @ VGS = 10 V (mΩ): 6.9
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 115
PD Max (W): 250
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 82
更多
Ciss Typ (pF): 6265
Qgd Typ @ VGS = 4.5 V (nC): 15
Qrr Typ (nC): 226
Coss Typ (pF): 502
Crss Typ (pF): 25
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: N
Reference Price: $2.451
FDB070AN06A0
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 Power Trench® MOSFET 60V，80A，7mΩ
状态: Active
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 7
Vgs (V): 20
Vgs(th) Max (V): 4
ID Max (A): 80
PD Max (W): 175
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 51
更多
Ciss Typ (pF): 3000
Qgd Typ @ VGS = 4.5 V (nC): 16
Qrr Typ (nC): 35
Coss Typ (pF): 510
Crss Typ (pF): 230
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Y
Reference Price: $1.6222