IQD020N10NM5CGSC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 100 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on)
I[D ](@25°C) max: 276.0A
Operating Temperature max: 175.0°C
Package: PQFN 5x6 Source-Down
Polarity: N
Q[G](typ @10V): 107.0nC
R[DS (on)](@10V) max: 2.05mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
IQD020N10NM5SC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 100 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on).
I[D ](@25°C) max: 276.0A
Operating Temperature max: 175.0°C
Package: PQFN 5x6 Source-Down
Polarity: N
Q[G](typ @10V): 107.0nC
R[DS (on)](@10V) max: 2.05mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
P[tot] max: 78.0W
V[DS] max: 100.0V
Q[G](typ @10V): 56.0nC
I[Dpuls] max: 332.0A
R[th]: 1.6K/W
Polarity: N
C[iss]: 4100.0pF
C[oss]: 750.0pF
R[DS (on)](@10V) max: 5.6mΩ
Micro-stencil: IRF66MN-25
I[D ](@25°C) max: 83.0A
V[GS(th)]: 2.7V
Package: DirectFET (M)
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 1.11
Budgetary Price €/1k: 1.11
I[Dpuls] max: 180.0A
R[th]: 1.6K/W
P[tot] max: 78.0W
V[DS] max: 150.0V
Q[G](typ @10V): 26.0nC
Polarity: N
C[iss]: 2100.0pF
C[oss]: 240.0pF
R[DS (on)](@10V) max: 16.5mΩ
Micro-stencil: IRF66MZ-25
I[D ](@25°C) max: 45.0A
V[GS(th)]: 3.0V
Package: DirectFET (M)
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 1.04
Budgetary Price €/1k: 1.04
Qualification: COTS
R[DS (on)](@25°C) max: 570.0mΩ
I[D ](@25°C) max: 4.4A
Q[G]: 10.0nC
TID max: 300.0Krad(Si)
Die Size: 1
QPL Part Number: 2N7657U9C
ESD Class: 1B
Polarity: N
Optional TID Rating(kRad(si)): 100 300
Optional TID Rating(kRad(si)): 100 300
V[F] max: 1.2V
Generation: R9
Package: SMD-0.1
V[BRDSS] min: 250.0V
Qualification: COTS
V[BRDSS] min: 250.0V
I[D ](@25°C) max: 4.4A
R[DS (on)](@25°C) max: 570.0mΩ
Q[G]: 10.0nC
TID max: 100.0Krad(Si)
Die Size: 1
QPL Part Number: 2N7657U9C
ESD Class: 1B
Polarity: N
Optional TID Rating(kRad(si)): 100 300
V[F] max: 1.2V
Generation: R9
Package: SMD-0.1
IQE008N03LM5SC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down DSC package
I[D ](@25°C) max: 252.0A
I[Dpuls] max: 1008.0A
Operating Temperature max: 150.0°C
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @4.5V): 30.0nC
Q[G](typ @10V): 64.0nC
R[DS (on)](@10V) max: 0.85mΩ
R[DS (on)](@4.5V) max: 1.0mΩ
V[DS] max: 30.0V
V[GS(th)]: 1.6V
Budgetary Price €/1k: 0.87
IQE008N03LM5CGSC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down Center-Gate DSC package
I[D ](@25°C) max: 252.0A
I[Dpuls] max: 1008.0A
Operating Temperature max: 150.0°C
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @4.5V): 30.0nC
Q[G](typ @10V): 64.0nC
R[DS (on)](@10V) max: 0.85mΩ
R[DS (on)](@4.5V) max: 1.0mΩ
V[DS] max: 30.0V
V[GS(th)]: 1.6V
Budgetary Price €/1k: 0.87
IQDH45N04LM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 40 V logic level in PQFN 5x6 Source-Down package with very low RDS(on).
I[D ](@25°C) max: 637.0A
I[Dpuls] max: 2548.0A
Mounting: SMD
Operating Temperature max: 175.0°C
Package: PQFN 5x6 Source-Down
Polarity: N
Q[G](typ @4.5V): 62.0nC
Q[G](typ @10V): 129.0nC
R[DS (on)](@10V) max: 0.45mΩ
R[DS (on)](@4.5V) max: 0.58mΩ
V[DS] max: 40.0V
V[GS(th)]: 1.6V
Budgetary Price €/1k: 1.45
IQDH29NE2LM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 25 V in PQFN 5x6 Source-Down package with industry-leading RDS(on).
I[D ](@25°C) max: 789.0A
I[Dpuls] max: 3156.0A
Mounting: SMD
Operating Temperature max: 150.0°C
Package: PQFN 5x6 Source-Down
Polarity: N
Q[G](typ @4.5V): 88.0nC
Q[G](typ @10V): 191.0nC
R[DS (on)](@10V) max: 0.29mΩ
R[DS (on)](@4.5V) max: 0.35mΩ
V[DS] max: 25.0V
V[GS(th)]: 1.6V
Budgetary Price €/1k: 1.47